CB-76 50 Search Results

ESM 467 600

Abstract: ESM 467 BRY 41 boitier to 126 ET 81 K kbh 2504 BRY 300
Contextual Info: C B 175 CB 200 T O 46 X 55 CB 10 (CB 76) Single phase rectifier bridges Ponts de redressement monophase Type Case V RRM (V) B oîtie r •o (A) Toper (°C) l FSM (A) V F (2) / (V) Tcase 50 °C max tp 10 ms max T (vj) 25 °C max max 'F (A) D R T 76 ■r / v r r m

B20C rectifier

Abstract: B125C DE 156 B125C600
Contextual Info: C B 156 CB 198 CB 199 CB 168 CB 200 CB 175 Single phase rectifier bridges Type Case B o itie r VRRM V ‘o (A) Toper (°C) [ FSM (A) V F (2) / lF (V) (A) Tease 50 °C max tp 10 ms T (vj) 25 °C max max max •r / v r r m (m a ) D R T 76 page T (vj) 25 °C

BFR 36.2

Abstract: BF253 BF509 BF480 BF606 PNP transistor 263 aTO-39 BF-255 C22B transistor 139 BF
Contextual Info: s ^ TA <«<3 TO 18 TO 92 CB 6 (CB 97) CB 146 F 139 B (CB 76) NPN Silicon transistors, H F amplification (continued) Transistors NPN au silicium, amplification H F (suite) Tam b= 25 ° C Case ptot ImW) V cEO ( V) Type B o îtie r max max * B F 200 TO 72 200

bc 658

Abstract: bo 135 bc 433 bc 540 bo 139 BF139 BA 659 BC658 BCW93B BC659
Contextual Info: s ß / F 1139 8 CB 76 T 0 18 (CB 6) s T O 39 (CB 7) T O 92 (CB 97) Silicon PN P transistors, general purpose (continued) Transistors P N P silicium, usage générai (suite) VcEO (V) Case Ptot (mW) VCER* Tamb — 25 °C h21 E h2 1 E * min *C (m A) V C Esat

bf 671

Abstract: BF116 BFW93 667 2N BFW 72 NPN/bf 671 699 NPN 2N3571 ESM 182 BF183
Contextual Info: TO 18 CB 6 CB 146 f 139 B (CB 76) Silicon NPN transistors, VH F - UH F amplification and oscillation T8mb = 25 0C Transistors N P N silisium, amplification e i oscillation U H F et V H F Case T yp « Boitier ptot (mW) VCEO (V) f GP (dB) h 21 E min max >C

BRY 300

Abstract: 12T4S RSM 2322 k 471 a 2322 635 BRY 56 C 10T4S DRT76 TO-46-200 14T4S
Contextual Info: CB 10 (CB 76) (CB 7) Low power SCRs — Normal series Thyristors de faible puissance — Séries normales Case Type 'T(rsm ) (A e ff) V r r m -V d r m (V) B oîtier 0,5 and 0,8 Aeff 0,5 et 0,8 A e ff Tease <°C) •t s m (A) Toper <°C) tp 10 ms m iri 'gt

bcw 94 b

Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Contextual Info: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60

bo 615

Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
Contextual Info: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297

2N2243

Abstract: 736B 2n 699
Contextual Info: CB 7 (CB 6) Silicon N P N transistors, general purpose T g m b -2 5 Transistors NPN siliciu m , usage généra! v CEO h 2 iE v C Esat fT *s (ns) VCER* h 2 lE * •c (V ) to ff’ T S i 76 VCEX^ m in m ax <mA) m ax ■c / ' b (m A ) (M H z} m in m ax Page

transistor BF 245

Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245
Contextual Info: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages

NAD-26B

Contextual Info: 60Watts 3.3V & 5V Open Frame Dual Output Model No.: NAD-26B Feature: l l l l 90 to 264Vac universal input range. UL/CUL, TUV, CB safety meet. EMI/RFI meet VDE & FCC limit B. Low cost & compact size. l l 60Watts in 76x127×36.5mm size. 2 year warranty. Specifications: typical at nominal line, full load at 25 ° C.

5V1 85C

Abstract: bzx 86 c BZX 86c BZ 6V2 1N4189 BZX 24 85C 85C3V3 85c 3v3 85c 5V6 bz-86
Contextual Info: DO 41 CB 101 Types V Z T /l2 T * IV) nom 1N 4 7 6 3 A 1N 4764 A 91 1N4187 B 110 120 100 1N 4188 B 1N 4189 B rZT/»ZT* (n ) max >ZT ImA) 250 350 2,8 3000 0,25 0,09 5 69 10 2,5 2,3 2 0,09 0,10 5 5 76 84 9,4 450 3000 0,25 4000 0,25 4500 0,25 0,10 5 91 8,6 7,8

BC264

Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
Contextual Info: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages

ANEV 17

Abstract: OC27
Contextual Info: CXD8068G 1/4 IL00 * C-MOS 4 : 2 : 2 COMPONENT DIGITAL VIDEO PARALLEL INTERFACE ENCODER -BOTTOM VIEW- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 52 53 54 55 56 57 58 59 60 61 62 63 64 15 51 96 97 98 99 100 101 102 103 104 105 106 65 16 50 95 132 INDEX 107 66

AS3612

Abstract: AS3601
Contextual Info: Potentiometers Ohmite molded composition potentiometers are available in various models for applications in military devices, industrial equipment and in equipment requiring a convenient resistance control device. Molded composition 0.625" 15.9mm 2"/50.8mm

marking 113a

Abstract: IEC134 LAE4001R LAE4001RA r7t marking code
Contextual Info: LA E 4001R LAE4001 RA V PHILIPS I N T E RNATIONAL SbE D • TllDflEb DOMblbfl 502 ■ P H I N MICROWAVE LINEAR POWER TRANSISTOR NPIM transistors f o r co m m o n -e m itte r class-A linear p ow er am p lifie rs up to 4 G H z. Self-aligned process e n tire ly ion im planted and gold sandwich m e ta lliza tio n ensure an o p tim u m tem perature p ro file ,

HDC-HD-40BCG

Abstract: HDC-HD-40SCM 1788800000 HDC-HD-25SCG HB-16 HDC-HD-64SCM HDC-HD-40SCG 1650590000 1650650000 25-BCM
Contextual Info: Series HD 60 Series HD HD-Inserts 7 - 128 Pole Crimp contacts Stamped or turned crimp contacts Pole number: 7, 8, 15, 16, 24, 25, 40, 50, 64, 80, 128 61 Series HD Technical data Series HD Standards DIN VDE 0627 DIN VDE 0110 Technical data Series HD Approvals

Contextual Info: 1 1 1 1 1 1234567869A4BCD4EFD E93 ! 1 23451 1 51 1 51 1 51 1 !"51 1 51 1 %51 1 "51 1 1                26789A6B14CDEF91 111EC6FD1 6F1 9BDF6 CA61 !C61"8C 61#$41%9&FC'8 1 !2151(91  1AC671

D-A53L

Abstract: D-A54L D-F7PL D-F7P d-j79l smc d-a73L auto reed switch D-A80L F59L E204
Contextual Info: R O TA R Y A C T U AT O R S RACK & PINION T Y P E S E R I E S CRA RACK & PINION TYPE R O TA R Y A C T U AT O R B O R E S I Z E S Ø30, 50, 63, 80, 100 M M S E R I E S CRA1 9 0 º , 1 8 0 º ro t a t i o n Optional magnetic piston for autoswitches L o w f r i c t i o n re s i s t a n c e

A1701

Abstract: IEC 60947 R0000 ZS16 D0201 ZS16-OR ZS16-BL c1008 transistor IEC 60947-7-1 A1101
Contextual Info: Technical Datasheet 1SNK 161 017 D0201 20/01/10 Catalogue Page 1SNK 161 017 S0201 ZS16 Screw Clamp Terminal Block Feed-through Save space by connecting conductors up to 16 mm² CB certified 4 AWG in just 10 mm 0.394 in spacing. 57.8 2.28" 50.3 1.98" 56.1 2.21"

KS51840

Contextual Info: KS51840.XX - 1 Rf CMohrn] 1 FCR4.0M5 Vdd- 3 CV3 Flg.a^d Ta- 20 Cdeg] Typical a. VÎH/V1L 1.45 m • « 1 1 CV] a. Vhold F h.14 1.47 1.46 1.16 1.48 i ii5 : a i « l.(18 l.t23 L_i_ i _ -j_ i_ i_— i_—J_i_1_ L_ 10 20 30 40 50 1.25 I •- 1- 1-60

Contextual Info: SHEET 1 OF 1 4.70 [.185 in] 12.70 [.500 in] n1.85 [.073 in] .85 [.033 in] 6.60 [.260 in] PCB LAYOUT .52 [.020 in] SWITCH FUNCTION POS. 1 POS. 2 POS. 3 ON NONE ON 2-3 OPEN 2-1 KEYWAY 2.79 n[.110 in] ISOMETRIC 10.41 [.410 in] 2 1/4-40 UNS-2A THREADS 1 8.80 [.346 in]

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

uPD78F9116

Contextual Info: ZC dependence of oscillating characteristics uPD78F9UG FCR6.0MC5 - STD ^\ite« IC HO 391 392 «. CV] b. V1H/V1L Room Temp. Vdd CV3 5 m V2H/V2L / / 5 5 .5 .5 c. MHz] d. CuS] «. va item a~e f. M g. m Fosc Trisa Duty Vstart Vhald 6.0182 100 50.4 1.7 1.58 6.0185