CB-76 50 Search Results

ESM 467 600

Abstract: ESM 467 BRY 41 boitier to 126 ET 81 K kbh 2504 BRY 300
Contextual Info: C B 175 CB 200 T O 46 X 55 CB 10 (CB 76) Single phase rectifier bridges Ponts de redressement monophase Type Case V RRM (V) B oîtie r •o (A) Toper (°C) l FSM (A) V F (2) / (V) Tcase 50 °C max tp 10 ms max T (vj) 25 °C max max 'F (A) D R T 76 ■r / v r r m

B20C rectifier

Abstract: B125C DE 156 B125C600
Contextual Info: C B 156 CB 198 CB 199 CB 168 CB 200 CB 175 Single phase rectifier bridges Type Case B o itie r VRRM V ‘o (A) Toper (°C) [ FSM (A) V F (2) / lF (V) (A) Tease 50 °C max tp 10 ms T (vj) 25 °C max max max •r / v r r m (m a ) D R T 76 page T (vj) 25 °C

BFR 36.2

Abstract: BF253 BF509 BF480 BF606 PNP transistor 263 aTO-39 BF-255 C22B transistor 139 BF
Contextual Info: s ^ TA <«<3 TO 18 TO 92 CB 6 (CB 97) CB 146 F 139 B (CB 76) NPN Silicon transistors, H F amplification (continued) Transistors NPN au silicium, amplification H F (suite) Tam b= 25 ° C Case ptot ImW) V cEO ( V) Type B o îtie r max max * B F 200 TO 72 200

bc 658

Abstract: bo 135 bc 433 bc 540 bo 139 BF139 BA 659 BC658 BCW93B BC659
Contextual Info: s ß / F 1139 8 CB 76 T 0 18 (CB 6) s T O 39 (CB 7) T O 92 (CB 97) Silicon PN P transistors, general purpose (continued) Transistors P N P silicium, usage générai (suite) VcEO (V) Case Ptot (mW) VCER* Tamb — 25 °C h21 E h2 1 E * min *C (m A) V C Esat

bf 671

Abstract: BF116 BFW93 667 2N BFW 72 NPN/bf 671 699 NPN 2N3571 ESM 182 BF183
Contextual Info: TO 18 CB 6 CB 146 f 139 B (CB 76) Silicon NPN transistors, VH F - UH F amplification and oscillation T8mb = 25 0C Transistors N P N silisium, amplification e i oscillation U H F et V H F Case T yp « Boitier ptot (mW) VCEO (V) f GP (dB) h 21 E min max >C

BRY 300

Abstract: 12T4S RSM 2322 k 471 a 2322 635 BRY 56 C 10T4S DRT76 TO-46-200 14T4S
Contextual Info: CB 10 (CB 76) (CB 7) Low power SCRs — Normal series Thyristors de faible puissance — Séries normales Case Type 'T(rsm ) (A e ff) V r r m -V d r m (V) B oîtier 0,5 and 0,8 Aeff 0,5 et 0,8 A e ff Tease <°C) •t s m (A) Toper <°C) tp 10 ms m iri 'gt

bcw 94 b

Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Contextual Info: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60

bo 615

Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
Contextual Info: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297

2N2243

Abstract: 736B 2n 699
Contextual Info: CB 7 (CB 6) Silicon N P N transistors, general purpose T g m b -2 5 Transistors NPN siliciu m , usage généra! v CEO h 2 iE v C Esat fT *s (ns) VCER* h 2 lE * •c (V ) to ff’ T S i 76 VCEX^ m in m ax <mA) m ax ■c / ' b (m A ) (M H z} m in m ax Page

transistor BF 245

Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245
Contextual Info: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages

5V1 85C

Abstract: bzx 86 c BZX 86c BZ 6V2 1N4189 BZX 24 85C 85C3V3 85c 3v3 85c 5V6 bz-86
Contextual Info: DO 41 CB 101 Types V Z T /l2 T * IV) nom 1N 4 7 6 3 A 1N 4764 A 91 1N4187 B 110 120 100 1N 4188 B 1N 4189 B rZT/»ZT* (n ) max >ZT ImA) 250 350 2,8 3000 0,25 0,09 5 69 10 2,5 2,3 2 0,09 0,10 5 5 76 84 9,4 450 3000 0,25 4000 0,25 4500 0,25 0,10 5 91 8,6 7,8

BC264

Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
Contextual Info: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages

ANEV 17

Abstract: OC27
Contextual Info: CXD8068G 1/4 IL00 * C-MOS 4 : 2 : 2 COMPONENT DIGITAL VIDEO PARALLEL INTERFACE ENCODER -BOTTOM VIEW- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 52 53 54 55 56 57 58 59 60 61 62 63 64 15 51 96 97 98 99 100 101 102 103 104 105 106 65 16 50 95 132 INDEX 107 66

AS3612

Abstract: AS3601
Contextual Info: Potentiometers Ohmite molded composition potentiometers are available in various models for applications in military devices, industrial equipment and in equipment requiring a convenient resistance control device. Molded composition 0.625" 15.9mm 2"/50.8mm

HDC-HD-40BCG

Abstract: HDC-HD-40SCM 1788800000 HDC-HD-25SCG HB-16 HDC-HD-64SCM HDC-HD-40SCG 1650590000 1650650000 25-BCM
Contextual Info: Series HD 60 Series HD HD-Inserts 7 - 128 Pole Crimp contacts Stamped or turned crimp contacts Pole number: 7, 8, 15, 16, 24, 25, 40, 50, 64, 80, 128 61 Series HD Technical data Series HD Standards DIN VDE 0627 DIN VDE 0110 Technical data Series HD Approvals

KS51840

Contextual Info: KS51840.XX - 1 Rf CMohrn] 1 FCR4.0M5 Vdd- 3 CV3 Flg.a^d Ta- 20 Cdeg] Typical a. VÎH/V1L 1.45 m • « 1 1 CV] a. Vhold F h.14 1.47 1.46 1.16 1.48 i ii5 : a i « l.(18 l.t23 L_i_ i _ -j_ i_ i_— i_—J_i_1_ L_ 10 20 30 40 50 1.25 I •- 1- 1-60

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

uPD78F9116

Contextual Info: ZC dependence of oscillating characteristics uPD78F9UG FCR6.0MC5 - STD ^\ite« IC HO 391 392 «. CV] b. V1H/V1L Room Temp. Vdd CV3 5 m V2H/V2L / / 5 5 .5 .5 c. MHz] d. CuS] «. va item a~e f. M g. m Fosc Trisa Duty Vstart Vhald 6.0182 100 50.4 1.7 1.58 6.0185

HT6547C

Abstract: SCO13 keyboard ibm pc encoder SCO-10 KEYBOARD IBM PC XT SCO12 BAT 99
Contextual Info: HT6547C Keyboard Encoder For Windows 95 Features • • • • • • • • • • Supports 3 Windows Keys Supports code set 1, for PC/XT keyboard Supports code set 1, for PS/2 model 30 keyboard Support code set 2, for PC/AT, PS/2 model 50,60 keyboards

da 3309

Abstract: amplificateur de son 3v self choc 2n3309 2522N signaux SELF DE CHOC
Contextual Info: 2 N 3309 NPN SILICON TRANSISTORS, Ei IT A X IA L PLANAR TRANSISTORS NPN SILIC IU M , PLAN A R E P IT A X IA U X • Power amplification at 250 MHz A m p lifica tio n de puissance à 250 MHz v CBO 50V v CEO 30 V O *T Gp 300 MHz min. 2W min. 250 MHz 7 dB min.

2SC2570

Abstract: 2sc2570 transistor NE02132
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,

IEC 384-4

Abstract: PEH506YCD3220M2 transistor Bc 540 BD 140 transistor PEH506 PEH506YCG3330M2 780 AC PEH506Y PEH506VBE3220M2 AD-2
Contextual Info: PEH 506 85°C • • • • • Snap-In Long Life Grade PCB Mounting Low ESR and ESL High ripple current APPLICATION BASIC DESIGN Typical applications for PEH 506 would be SMPS, drives, welding equipment, UPS and other power electronic applications where

Contextual Info: P50A-T 46.5~50W AC-DC Triple Output Desktop series Features : 3 pole AC inlet IEC320-C14 Class power with earth pin Protections: Short circuit / Overload / Over voltage Fully enclosed plastic case Fix switching frequency and regulation Topology: PWM 3882 circuit

HT6547E

Abstract: 106-key keyboard encoders K107 K131 K132 K133
Contextual Info: HT6547E Win95 Keyboard Encoder With Japanese Features • • • • • • • • • • • Supports 3 Windows Keys Supports Japanese DOS/V 106-key keyboard Supports code set 1, for PS/2 model 30 keyboard Supports code set 2, for PC/AT, PS/2 model 50,60 keyboards