CB 753 U Search Results

MTK-20140

Abstract: P3901
Contextual Info: PRODUCT DATA SHEET P3901 ADSL Transformer Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ Alcatel DynaMiTe CPE ∗ ADSL over ISDN Lead-free Pb-free Low Distortion IEC 950 and UL 60950 Certified UL Recognized Component Supplementary Insulation Surface Mount

MTK-20140

Abstract: P3901
Contextual Info: PRODUCT DATA SHEET P3901 ADSL Transformer Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Alcatel DynaMiTe CPE ∗ ADSL over ISDN Low Cost Low Distortion IEC 950, UL 1950 and EN 60950 Certified UL Recognized Component BABT Certified Supplementary Insulation

Contextual Info: J0#33B0$EE9BB0:/AA0 J0<>CB04CA30>@=B31B7=< J0<>CB0@3D3@A30>=:/@7BG0>@=B31B7=< J0<>CB07<6@CA601C@@3<B0>@=B31B7=< J0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< J0%D3@0D=:B/530>@=B31B7=< J08%67A=:/B7=<0AF990+

Contextual Info: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0<>CB04CA30>@=B31B7=< K0<>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0<>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<

70l09

Contextual Info: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0<>CB04CA30>@=B31B7=< K0<>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0<>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<

Contextual Info: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0<>CB04CA30>@=B31B7=< K0<>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0<>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<

2n706

Abstract: 89012 2N706A 2N753 6CB6 2n 753 2n 706 Thomson-CSF bb
Contextual Info: 2N 706 A 2N753 NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L TRANSISTORS NPN SILIC IU M , E P IT A X IA U X - Small signal amplification A m plifica tio n petits signaux - Low current fast switching Commutation rapide faible courant Maximum power dissipation

2N706

Abstract: 2N753 89012 2N706A 2n 706
Contextual Info: 2N 706 A 2 N 75 3 NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L TRANSISTORS NPN SILIC IU M , E P IT A X IA U X - Small signal amplification A m plifica tio n petits signaux - Low current fast switching Commutation rapide faible courant Maximum power dissipation

945GM

Abstract: EN50155 hilscher ThinkIO-Duo CANopen RJ45 EN61000-6-2 EN61000-6-3 EN61000-6-4 WAGO
Contextual Info: » ThinkIO-Duo «« Dual Core DIN Rail PC » Intel Core Duo fan less » Rugged and ultra compact » Maintenance free » High system availability If it’s embedded, it ’s Kontron. ThinkIO-Duo ThinkIO-Duo Dual Core DIN Rail PC ThinkIO-Duo achieves exceptional performance in an ultra

transistor cb 753 u

Abstract: lf2a
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT753 ISSUE 1 - FEB 94_ FEATU RES * 100 Volt V CE0 * 2 A m p c o n tin u o u s current * P,ot= 1 W att A P P L IC A T IO N S * Lam p, relay o r s o le n o id d riv e rs * A u d io circuits

Contextual Info: F20'&- +) &!DAAA0 3@73A DAAA,001B7D30& (7<5:30%CB>CB .3('.)*'$-3'3,# 3/BC@3A J00*<7D3@A/:00 <>CB0E7B60/1B7D30& J00&@=5@/;/0:30%CB>CB0+=:B/5303DA17BAF14 J00&@=5@/;/0:30%CB>CB0C@@3<B03EA17BAA14 J007560447173<1G0C>0B=0A1 J005F+9A8F0CF7:7/@G0%CB>CB

Contextual Info: F20'&- +) &!BFAA0 3@73A BFAA,001B7D30& (7<5:30%CB>CB .3('.)*'$-3'3,# 3/BC@3A J00*<7D3@A/:00 <>CB0E7B60/1B7D30& J00&@=5@/;/0:30%CB>CB0+=:B/5303DA17BAF14 J00&@=5@/;/0:30%CB>CB0C@@3<B03EA17BAA14 J007560447173<1G0C>0B=0A1 J005F+9A8F0CF7:7/@G0%CB>CB

marking 1A

Abstract: TMPT918 pt2222a
Contextual Info: NPN TRANSISTORS S O T -2 3/T O -23 6 A B 3 ELECTRICAL CHARACTERISTICS at T . = 25°C V V BR CBO v lBR)CEO Vishiebo Max. @ V CB Device Type v CE(sat) DC Current Gain ^CBO hFE hFE @ lc @ v ce Max. @ lc Min. Max. (mA) (V) (V) (nA) (V) 20 5.0 100 20 110 220 2.0

BC701

Contextual Info: F20'&- +) '"FA9'"BAAA0)3@73A FA-070BAAA-001B7D30&#39; )7<5:30&CB>CB .3 '.)*'$-3'3,# 3/BC@3A J00+<7D3@A/:00 <>CB0E7B60/1B7D30&#39; J00'@=5@/;/0:30&CB>CB0,=:B/5303DA17BAF14 J00'@=5@/;/0:30&CB>CB0C@@3<B03EA17BAF14 J00=@13201C@@3<B0A6/@7<504=@0>/@/:3:0=>3@/B7=<

Contextual Info: N AUER PHILIPS/DISCRETE b5E bb53531 Q037flSb 553 • APX D BSS50 to 52 N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving. P-N-P complements are the BSS60, BSS61 and BSS62.

Contextual Info: 1234563789A7B79C422B Pb Free 29A 1F6!"F  8369A 12234567 B#$2C 12234567 1234567 89AB9CD5E6FE 44 서식번호 : SSC- QP- 7- 07- 25 Rev.0.0 1234563789A7B79C422B %5A2A#5& F4 '2#CA E4 ()#*B25$9+$B$5C9A,# -4 *2C"9*5.9C92C##

ZTX753

Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts

BEC npn

Abstract: SOT-23 EBC PT2221 N54 SOT-23
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|

2SD751

Abstract: 2SB713 2SD750 AIC15
Contextual Info: PANASONIC INDL/ELEK-CSENI} 7EC D | bT32flS4 □ 0 G c]3a4 □ 693-285 2 PANASONIC INDL *£ LECTRON IC 72C 0 9 3 8 4 ~T w 3 D 3 3 2s d 75o 2SD750 '> iJ u > N P N ÍÉifcféHq¿ If J f é / S i N P N Diffused Junction Mesa High Power Amplifier • ^ [/F e a tu r e s

Contextual Info: N AMER PHILIPS/DISCRETE h lE » bb53^31 0058121 855 2N29 U S 2N2905A APX A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes designed primarily for high-speed switching and driver applications for industrial service. QUICK REFERENCE DATA

3904

Contextual Info: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration

Contextual Info: Philips Semiconductors bbS3R31 0031704 72T M A P X NPN 1 GHz video transistors £ Product specification BFQ232; BFQ232A N AflER PHILIPS/DISCRETE DESCRIPTION b'JE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a

transistor ESM 30

Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950
Contextual Info: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os­ cillator stage in T V VH F tuners.

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