CB 753 U Search Results

MTK-20140

Abstract: P3901
Contextual Info: PRODUCT DATA SHEET P3901 ADSL Transformer Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ Alcatel DynaMiTe CPE ∗ ADSL over ISDN Lead-free Pb-free Low Distortion IEC 950 and UL 60950 Certified UL Recognized Component Supplementary Insulation Surface Mount

Contextual Info: J0#33B0$EE9BB0:/AA0 J0<>CB04CA30>@=B31B7=< J0<>CB0@3D3@A30>=:/@7BG0>@=B31B7=< J0<>CB07<6@CA601C@@3<B0>@=B31B7=< J0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< J0%D3@0D=:B/530>@=B31B7=< J08%67A=:/B7=<0AF990+

Contextual Info: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0<>CB04CA30>@=B31B7=< K0<>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0<>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<

70l09

Contextual Info: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0<>CB04CA30>@=B31B7=< K0<>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0<>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<

Contextual Info: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0<>CB04CA30>@=B31B7=< K0<>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0<>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<

2n706

Abstract: 89012 2N706A 2N753 6CB6 2n 753 2n 706 Thomson-CSF bb
Contextual Info: 2N 706 A 2N753 NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L TRANSISTORS NPN SILIC IU M , E P IT A X IA U X - Small signal amplification A m plifica tio n petits signaux - Low current fast switching Commutation rapide faible courant Maximum power dissipation

2N706

Abstract: 2N753 89012 2N706A 2n 706
Contextual Info: 2N 706 A 2 N 75 3 NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L TRANSISTORS NPN SILIC IU M , E P IT A X IA U X - Small signal amplification A m plifica tio n petits signaux - Low current fast switching Commutation rapide faible courant Maximum power dissipation

Contextual Info: F20'&- +) &!BFAA0 3@73A BFAA,001B7D30& (7<5:30%CB>CB .3('.)*'$-3'3,# 3/BC@3A J00*<7D3@A/:00 <>CB0E7B60/1B7D30& J00&@=5@/;/0:30%CB>CB0+=:B/5303DA17BAF14 J00&@=5@/;/0:30%CB>CB0C@@3<B03EA17BAA14 J007560447173<1G0C>0B=0A1 J005F+9A8F0CF7:7/@G0%CB>CB

marking 1A

Abstract: TMPT918 pt2222a
Contextual Info: NPN TRANSISTORS S O T -2 3/T O -23 6 A B 3 ELECTRICAL CHARACTERISTICS at T . = 25°C V V BR CBO v lBR)CEO Vishiebo Max. @ V CB Device Type v CE(sat) DC Current Gain ^CBO hFE hFE @ lc @ v ce Max. @ lc Min. Max. (mA) (V) (V) (nA) (V) 20 5.0 100 20 110 220 2.0

BC701

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Contextual Info: N AUER PHILIPS/DISCRETE b5E bb53531 Q037flSb 553 • APX D BSS50 to 52 N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving. P-N-P complements are the BSS60, BSS61 and BSS62.

ZTX753

Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts

BEC npn

Abstract: SOT-23 EBC PT2221 N54 SOT-23
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|

Contextual Info: Philips Semiconductors bbS3R31 0031704 72T M A P X NPN 1 GHz video transistors £ Product specification BFQ232; BFQ232A N AflER PHILIPS/DISCRETE DESCRIPTION b'JE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a

transistor ESM 30

Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950
Contextual Info: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os­ cillator stage in T V VH F tuners.

Contextual Info: J0 7;5930/;202B/90<BA=BA J0#33A0$EE9BB09/@@0 J0;=BA04B@30=?<A31A7<; J0;=BA0?3C3?@30=<9/?7AF0=?<A31A7<; J0;=BA07;6?B@601B?3;A0=?<A31A7<; J0%C3?9</20/;20@6<?A017?1B7A0=?<A31A7<; J0%C3?0C<9A/530=?<A31A7<;

2SB541

Abstract: 2SD388 C14A 2SD388 A 2sd388/2sb541 251C audio amplifier 50w 50v
Contextual Info: 2SD 388/2SB541 2SD388/2SB541 npn/ pnp E.nm * y =• > h 7 v * * * NPN/PNP SILICON TRIPLE DIFFUSED MESA TRANSISTOR ffl/A u d io Frequency Power Amplifier WttmZPACKAGE DIMENSIONS Unit:mm ft St/FEA T U R E • 40~ 50W H i-Fi 7 v ^2 y t v 9 ') '<V — \ 7 v v 7 9 7;

SPHV402

Abstract: TO36 TO114
Contextual Info: 8440355 SPACE SPACE POWER POWER E L E C T R O N I C S 89C ELECTRONICS "flT 00115 D T-3 3-0/ DE~|fl44Q3SS •••••US t Ni-Rel PLANAR POWER 60 AMP P B A S E T O E M I T T E R S A T U R A T I O N V O L T A G E 3.5 S w 2 . 0 UI CD > 1 . 5 ." 1 TA-" - 5 5

2SD1530

Abstract: 753p
Contextual Info: Power Transistors 2SD1530 2SD1530 Silicon NPN Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r Switchin g i-» • F e a tu re s 10.2m ax. • High speed switching _ r— U n it I mm 4.4m ax. 5.7m ax. • High collector-base voltage 2 9max V Cbo

Contextual Info: I 1 N AUER PHILIPS/DISCRETE bTE D bb53^31 0027741 141 APX B fX 3 U SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope intended for switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter Collector-emitter voltage (open base)

PHILIPS BDX65

Abstract: BDX65 PHILIPS BDX64
Contextual Info: N AMER PHILIPS/DISCRETE b b S a ^ l 0011=177 1 • BDX65; 65A BDX65B; 65C ESE D T - 3 3 - 2 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,

Contextual Info: CDU BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M ark in g P A C K A G E O U T L IN E D E T A IL S BCX71G = BG A L L D IM E N S IO N S IN m m BCX71H = BH BCX71J = BJ BCX71K = BK _3.0 2.8 0.14 0.48 03 8 3 Pin configuration

pnp transistor 1000v

Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A