CASED61 Search Results
CASED61 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode |
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100GB06Contextual Info: s e M IK R O N zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges T oase = 25/70 °C Ptot per IG B T , T oase = 25 °C Units 600 600 1 3 0 /1 0 0 260 / 200 ±20 450 - 4 0 . +150 125) 2500 Class F 40/125/56 Rge = 20 Tease = 25/70 °C; tp = 1 ms |
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Contextual Info: se MIKRDn Absolute Maximum Ratings V a lu e s Units Symbol C onditions 1 VcES VcGR lc IcM Vges Rge = 20 k ii Tease = 25/80 °C Tease = 25/80 °C¡ tp = 1 ms 1700 1700 7 5 /5 0 144/100 ±20 per IGBT, Tease = 25 °C AC, 1 min. DIN 4 0 040 DIN IEC 68T .1 500 |
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fll3bb71 | |
Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units 600 600 2 3 0 /1 9 5 460 / 390 ±20 700 -4 0 . +150 125) 2 500 Class F 40/125/56 Rge = 20 k£^ Toase = 25/60 "C Tease = 25/60 °C; tp = 1 ms Ptot Tj, (Tstg) |
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SKM 75 Gb 124 IGBT
Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits VQE 23 F Semitrans M SKM IGBT FF 450
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Contextual Info: se MIKROn Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc R ge = 20 k£2 Tca se = 25/80 °C Tca se = 25/80 °C; tp ICM = 1 ms V ges p e r I G B T , Tcase P to t = 25 °C T j, T s tg V sol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68 Values |
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semikron skm 75gbContextual Info: se MIKRON zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 600 600 100 / 75 2 0 0 /1 5 0 ±20 350 -4 0 . + 125) 150 2500 Rge = 20 Toase = 25/75 °C Tease = 25/75 °C; tp = 1 ms lc IcM V ges per IGBT, T oase = 25 °C Ptot Tj, (Tstg) |
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VQE 12Contextual Info: s e M IKR D n Absolute Maximum Ratings S ym bol s e m itr a n s m V a lu e s C ond itions ' U nits AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1700 1700 7 5 /5 0 14 4/10 0 ±20 500 - 4 0 . . ,+150 125 4000 Class F 55/150/56 Inverse Diode 81 Tease = 25/80 C If= - lc |
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SKM75GB173D VQE 12 | |
Contextual Info: s e m ik r o n Absolute Maximum Ratings Symbol C onditions VcES VcGR R ge = 2 0 k£2 lc ICM Tease = 2 5 /8 0 'C Tease = 2 5 /8 0 C j tp — 1 m s Values Units ’ 120 0 clim ate If s m l2t A V ±20 700 p er IG B T , Tease = 2 5 “C - 4 0 . . ,+ 1 5 0 125 |
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Contextual Info: s e MIKROn Absolute Maximum Ratings Values Symbol Conditions 1 Units VcES VcGR lc IcM V ges = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms P to t per R 1200 1200 1 5 0 /1 0 0 300 / 200 ± 20 700 -4 0 . + 150 125) 2 500 Class F 40/125/56 g e I G B T , T o as e |
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SKM50GB
Abstract: skm 22 gal 123
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SKM50 CASED61 SKM50GB skm 22 gal 123 | |
semikron SKm GAL 123D
Abstract: CASED61
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Contextual Info: s e M IKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc Tcase = IfM= - IcM tp = 10 |
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Contextual Info: s e M IK R O n Absolute Maximum Ratings Values Symbol Conditions ' . 123 D Units VcES VcGR lc ICM V ges R ge = 20 k£2 Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms 1200 1200 5 0 /4 0 1 0 0 /8 0 ±20 310 - 4 0 . . .+150 125 2 500 V V p e r IG BT, Tease = 25 °C |
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B647
Abstract: tig ac inverter circuit tig ac inverter circuit 180 skm100gb 100
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IEC68T B647 tig ac inverter circuit tig ac inverter circuit 180 skm100gb 100 | |
75AFC
Abstract: L56A b644 us25x
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DINIEC68T se--25/80 B6-46 75AFC L56A b644 us25x |