pnp phototransistor
Abstract: transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A
Contextual Info: A p p l i c at i o n N o t e AN3009 Phototransistor Switching Time Analysis Authors: Van N. Tran Staff Application Engineer, CEL Opto Semiconductors Robert Stuart, CEL Product Marketing Manager Hardik Bhavsar, San Jose State University Introduction A standard optocoupler provides signal transfer between
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an3009pnp phototransistortransistor comparison tablestransistor 9427+6314 optocouplercommon collector configuration basictransistor 2n4402digital optocoupler 4pin isolationnpn/transistor nec k 2500ps2501-1-a
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LM103 zener
Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Contextual Info: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-
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2n43392n4393lm103 zenerjfet cascode+82n3069j fet rf cascode input2n3070fm3954pierce crystal oscillator2n4416 jfethi-fi tone control transistorsfm1208
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J300 Siliconix
Abstract: 10112N 2n Siliconix FET U257 dual FET 2N4393 2N4416 2N5912 J300 U232 Siliconix Application Note
Contextual Info: z> B Siliconix g APPLICATION NO TE FETs for Video Amplifiers INTRODUCTION For this analysis the gate source leakage resistance has been ignored due to its high value. Redrawing the input equivalent circuit as a simple parallel RC combination results in The field-effect transistor lends itself well to video amplifier
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j300 siliconix10112n2n siliconix fetu257 dual fet+62n43932n44162n5912j300u232siliconix application note
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JFET siced
Abstract: SiC-JFET siced SiC jfet cascode SiC JFET cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high normally off SiC-JFET cascode mosfet switching thermal perfomance SiC IGBT IGBT THEORY AND APPLICATIONS
Contextual Info: A comparison of modern power device concepts for high voltage applications: Field stop-IGBT, compensation devices and SiC devices G. Deboy, H. Hüsken, H. Mitlehner* and R. Rupp Infineon AG, P.O. Box 80 09 49, 81609 Munich, Germany *SICED Electronics Development, Paul-Gossenstr. 100, 91052 Erlangen, Germany
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jfet sicedsic-jfetsicedsic jfet cascode+6sic jfetcascode mosfet switching sic-jfet* jfet siced sic-jfet comparison modern power device concepts highnormally off sic-jfetcascode mosfet switchingthermal perfomance sic igbtigbt theory and applications
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norton amplifier
Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Contextual Info: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output
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an-278norton amplifierlm3900 vcojfet discrete differential transistor+7jfet cascodeinternal structure of ic lm3900ultra high speed frequency dividerlm359operational amplifier discrete schematicnorton op. ampdesigning type ii compensation for current mode
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mp 1008
Abstract: SC33 629-633 Ahuja amplifier
Contextual Info: Copyright 1999 IEEE. Reprinted from: O. Khouri, R. Micheloni and G. Torelli, "Very fast recovery word-line voltage regulator for multilevel nonvolatile memories", Proc. Third IMACS/IEEE International Multiconference on Circuits, Systems, Communications and Computers CSCC , Athens (Greece), June 1999, pp. 3781-3784.
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t1976sc-32sc-18mp 1008+3sc33629-633ahuja amplifier
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LH0032
Abstract: HP50824220 DAC0808 datasheet DAC0808 pin diagram differential pair cascode jfet cascode AN-253 LF356 LH0024 LH0033
Contextual Info: INTRODUCTION The LH0024 and LH0032 are very high speed general purpose operational amplifiers exhibiting 70 MHz bandwidths, 500 V/µs slew rates and 100 to 300 ns settling time to 0.1%. The LH0032 has the added advantage of FET input characteristics. Both, however, can drive loads with peak currents
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lh0024lh0032an007313hp50824220+7dac0808 datasheetdac0808 pin diagramdifferential pair cascodejfet cascodean-253lf356lh0033
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amp 7313
Abstract: 7313 DAC0808 pin diagram LH0032 HP50824220 ta 7313 7313 28 pin AN2531 lh002 LH0024
Contextual Info: INTRODUCTION The LH0024 and LH0032 are very high speed general purpose operational amplifiers exhibiting 70 MHz bandwidths 500 V ms slew rates and 100 to 300 ns settling time to 0 1% The LH0032 has the added advantage of FET input characteristics Both however can drive loads with peak
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lh0024lh0032amp 73137313+6dac0808 pin diagramhp50824220ta 73137313 28 pinan2531lh002
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CA3123E
Abstract: CA3123 AM radio
Contextual Info: Linear Integrated Circuits CA3123E AM Radio Receiver Subsystem Includes R F A m p lifie r, IF A m p lifie r, M ix e r, O scillator, A G C D e te c to r, and V o lta g e Regulator Features: • Low-noise, low -R j,' rf stage in cascode connection — eliminates M iller-Effect regeneration and allows con
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ca3123e14-lead400hlca3123+1am radio
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dual matched PNP
Abstract: SSM2220
Contextual Info: Audio Dual Matched PNP Transistor SSM-2220 ANALOG ► DEVICES FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, 1nV /\/H z Max High Gain B andw Excellent G a in . @ lc = 1mA, 165 Typ
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100hz190mhztypssm-2220dual matched pnp+1ssm2220
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SUPER LOW NOISE AMPLIFIER
Abstract: Super matched pair transistor low noise preamp microphone SSM2220 differential pair cascode OP-27 SSM-2220 SSM2220P ssm22201 microphone amplifier with alc
Contextual Info: Audio Dual Matched PNP Transistor SSM-2220 ANALOG DEVICES FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, 1nV/v/Hz Max High Gain Bandwidth. 190MHz Typ Excellent G a in . @ lc = 1mA, 165 Typ
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ssm-2220100hz190mhz200nv+9super low noise amplifiersuper matched pairtransistor low noise preamp microphonessm2220differential pair cascodeop-27ssm2220pssm22201microphone amplifier with alc
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dual matched PNP
Abstract: cascode preamplifier microphone preamp alc cascode miller capacitance SSM2220
Contextual Info: Audio Dual Matched PNP Transistor SSM-2220 ANALOG DEVICES FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, 1nV/v/Hz Max High Gain Bandwidth. 190MHz Typ Excellent G a in . @ lc = 1mA, 165 Typ
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100hz190mhzssm-2220dual matched pnp+4cascode preamplifiermicrophone preamp alccascode miller capacitancessm2220
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jfet folded cascode
Abstract: folded cascode op amp folded cascode current mirror op amp pin diagram of 741 op-amp pin diagram of op-amp ic 741 OF IC 741 OP AMP op amp 709 709 OP AMP folded cascode op amp gain datasheets of op-amp ic 741
Contextual Info: MT-056 TUTORIAL High Speed Voltage Feedback Op Amps In order to intelligently select the correct high speed op amp for a given application, an understanding of the various op amp topologies as well as the tradeoffs between them is required. The two most widely used topologies are voltage feedback VFB and current feedback
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mt-056mt-050mt051mt-052+10jfet folded cascodefolded cascode op ampfolded cascode current mirror op amppin diagram of 741 op-amppin diagram of op-amp ic 741of ic 741 op ampop amp 709709 op ampfolded cascode op amp gaindatasheets of op-amp ic 741
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SSM2220
Abstract: super match pair preamp microphone low noise 5v
Contextual Info: Audio Dual Matched PNP Transistor SSM-2220 ANALOG DEVICES FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, 1nV/v/Hz Max High Gain Bandwidth. 190MHz Typ Excellent G a in . @ lc = 1mA, 165 Typ
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100hz190mhzssm-2220ssm2220+2super match pairpreamp microphone low noise 5v
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an4801
Abstract: LM741 NON INVERTING AMPLIFIER LM308 pin configuration LM741 op amp parameters push pull booster amplifiers LM741 chip configuration LM741 block diagram LMC669 dual LM741 LM741 NON INVERTING AND INVERTING AMPLIFIER
Contextual Info: National Semiconductor Application Note 480 Thomas Wong and Bob Zucker January 1987 Conventional high speed operational amplifiers with bandwidths in excess of 40 MHz introduce problems that are not usually encountered in slower amplifiers such as LF356 LM308 LM741 etc Many designers experience difficulties
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lf356lm308lm741an4801+9lm741 non inverting amplifierlm308 pin configurationlm741 op amp parameterspush pull booster amplifierslm741 chip configurationlm741 block diagramlmc669dual lm741lm741 non inverting and inverting amplifier
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nec527
Abstract: cascode miller capacitance AM685 MC1650
Contextual Info: Am 685 A New High-Speed Comparator the Am685 INTRODUCTION Modern electronic systems require more and more that operations be perform ed in a few nanoseconds so that the delay of the com plete system, which may be very complex, be held to a minimum. There are abundant logic
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am68510-bit106-typanec527+2cascode miller capacitancemc1650
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ic 7490
Abstract: internal structure of 7490 IC function of ic 7490 ci 7490 of 7490 IC Datasheet of 7490 IC of IC 7490 DIGITAL IC 7490 7490 application of 7490
Contextual Info: National Semiconductor Application Note 278 Timothy T Regan September 1981 WHY ANOTHER NORTON AMPLIFIER The current differencing Norton amplifier has been widely applied over the last 5 years because of the versatility and availability of quad Norton amplifiers the LM3900 These
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lm3900lm359ic 7490internal structure of 7490 ic+8function of ic 7490ci 7490of 7490 icdatasheet of 7490 icof ic 7490digital ic 74907490application of 7490
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Q1/2N3055 RCA
Contextual Info: Chapter 9 Using Analog CMOS Arrays to Create Current Sources 9.1 RCA pioneered CMOS Once the first stable MOSFETs had been created in the early 1960s by RCA researchers Steve Hofstein and Fred Heiman, and by Dr. Frank Wanlass at Fairchild Semiconductor, it opened the door to researching and developing other types of MOS
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MAT03
Abstract: DAC08 MAT03E MAT03EH MAT03F MAT03FH OP27 MAT03-SPECIFICATIONS Microphone Pre-Amplifier
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 V Max Low Noise: 1 nV/√Hz @ 1 kHz Max High Gain: 100 Min High Gain Bandwidth: 190 MHz Typ Tight Gain Matching: 3% Max Excellent Logarithmic Conformance: r BE Ӎ 0.3 ⍀ typ GENERAL DESCRIPTION
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mat03c00284-0-2/02dac08mat03e+6mat03ehmat03fmat03fhop27mat03-specificationsmicrophone pre-amplifier
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PHILIps monochrome monitor schematic
Abstract: OPA2662 graphic video card schematic OPA623 102M 107M AN-184 bfq262 black and white cathode ray tube HP8130A
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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philips monochrome monitor schematicopa2662graphic video card schematicopa623+6102m107man-184bfq262black and white cathode ray tubehp8130a
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norton amplifier
Abstract: LM3900 VCO high end amplifier schematics operational amplifier discrete schematic LM359 IC LM331 jfet cascode LM331 common base amplifier circuit designing norton op. amp
Contextual Info: WHY ANOTHER NORTON AMPLIFIER? The current differencing Norton amplifier has been widely applied over the last 5 years because of the versatility and availability of quad Norton amplifiers the LM3900 . These low cost quads are found today in a wide variety of analog
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lm3900lm359an007490norton amplifier+8lm3900 vcohigh end amplifier schematicsoperational amplifier discrete schematicic lm331jfet cascodelm331common base amplifier circuit designingnorton op. amp
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it505
Abstract: IT500 IT502 jfet cascode IT501 IT503 MONOLITHIC DUAL N-CHANNEL JFET cascode miller capacitance it500-it505
Contextual Info: IT 5 0 0 - IT 5 0 5 D ual M onolithic C aseode N -C h an n el JF E T FEATURES G E N E R A L D E S C R IP T IO N • C m r r > 120 dB A low noise, low leakage FE T that em ploys a cascode structure to accom plish very low I q at: high voltage levels, while giving high transconductance and very high common
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it500-it50550vqqit505it500+6it502jfet cascodeit501it503monolithic dual n-channel jfetcascode miller capacitance
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MAT03 op
Abstract: PMD CAPACITOR MAT03 MAT03EH Super matched pair current mirror cascode dual matched PNP Dual Transistors TO-78 mat03ah2 MAT03A
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form
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mat03mat03 oppmd capacitormat03eh+6super matched paircurrent mirror cascodedual matched pnpdual transistors to-78mat03ah2mat03a
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transistor s parameters noise
Abstract: Super matched pair super match pair ssm pmi al cur hoe tv transistor low noise preamp microphone cascode miller capacitance SSM PNP matched transistors SILICON SMALL-SIGNAL transistor DICE SSM2220
Contextual Info: SSM-2220 PMÎ AUDIO DUAL MATCHED PNP TRANSISTOR FEATURES Very Low Voltage N o is e . @ 1 00Hz, 1nV/v^Hz Max High Gain Bandw idth .190M HzTyp Excellent G a in
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ssm-2220transistor s parameters noisesuper matched pairsuper match pair+7ssm pmial cur hoe tvtransistor low noise preamp microphonecascode miller capacitancessm pnp matched transistorssilicon small-signal transistor dicessm2220
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