CAS 3040 Search Results

tpu3050

Abstract: teletext font
Contextual Info: PRELIMINARY DATA SHEET MICRONAS INTERMETALL TPU 3035, TPU 3040, TPU 3050 Teletext Processors MICRONAS Edition Feb. 23, 1999 6251-349-6PD TPU 3035, TPU 3040, TPU 3050 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 6

tpu3050

Abstract: micronas frc DSA003669
Contextual Info: PRELIMINARY DATA SHEET MICRONAS Edition Feb. 23, 1999 6251-349-6PD TPU 3035, TPU 3040, TPU 3050 Teletext Processors MICRONAS TPU 3035, TPU 3040, TPU 3050 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 6 6 7 8 8 8 9

Contextual Info: PRELIMINARY DATA SHEET TPU 3035, TPU 3040 Teletext Processors Edition Sept. 20, 1995 6251-349-4PD ITT Semiconductors TPU 3035, TPU 3040 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 7 7 8 8 8 9 9 9 2. 2.1. 2.2. 2.3.

Contextual Info: PRELIMINARY DATA SHEET MICRONAS INTERMETALL TPU 3035, TPU 3040 Teletext Processors MICRONAS Edition Dec. 9, 1996 6251-349-5PD TPU 3035, TPU 3040 PRELIMINARY DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 6 7 7 8 8 8 9 9 9 2. 2.1.

MH2V645CZJJ-6S

Abstract: MH2V645CZJJ-6 MH2V645CZJJ6 MH2V645CZJJ-5
Contextual Info: MITSUBISHI LSIs Preliminary MH2V645CZJJ-5,-6,-7,-5S,-6S,-7S Some of contents are subject to change without notice. HYPER PAGE MODE 134217728-BIT 2097152-WORD BY 64-BIT DYNAMIC RAM DESCRIPTION The MH2V645CZJJ is 2097152 - word by 64 - bit dynamic RAM module. This consists of eight industry standard 2Mx8

GR-30-CORE

Abstract: MT88E45 MT88E46 MT88E46AS
Contextual Info: MT88E46 Bellcore Compliant Calling Number Identification Circuit Advance Information Features • • • • • • • • • • • Compatible with Bellcore GR-30-CORE, SR-TSV-002476; TIA/EIA-716 and TIA/EIA-777 Pin compatible with MT88E45 Differential input amplifiers with adjustable

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8M322SSM4/LSM4 FAST PAGE MODE 8MX32 DRAM SIMM, 2K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED8M322SSM4/LSM4 is an 8M bit x 32 Dynamic RAM high density memory module. The AVED Memory Products AVED8M322SSM4/LSM4

fsk to RS-232 converter

Contextual Info: MT88E46 Bellcore Compliant Calling Number Identification Circuit Advance Information Features • • • • • • • • • • • Compatible with Bellcore GR-30-CORE, SR-TSV-002476; TIA/EIA-716 and TIA/EIA-777 Pin compatible with MT88E45 Differential input amplifiers with adjustable

SA9C

Contextual Info: i E C ELECTRONICS INC blE D LUh V NEC Electronics Inc. • b427525 0D337b3 2b4 BINECE fiPD424900A/L, 42S4900A/L 524,288 x 9-Blt Dynamic CMOS RAM T - Description The ¿/PD424900A/L and ^PD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits

telephone hybrid

Abstract: GR-30-CORE MT88E45 MT88E46 MT88E46AS MT88E46ASR 3040
Contextual Info: MT88E46 Bellcore Compliant Calling Number Identification Circuit Data Sheet Features • • • • • • • • • • • Compatible with Bellcore GR-30-CORE, SRTSV-002476; TIA/EIA-716 and TIA/EIA-777 Pin compatible with MT88E45 Differential input amplifiers with adjustable gains

GR-30-CORE

Abstract: MT88E45 MT88E46 MT88E46AS telephone hybrid
Contextual Info: MT88E46 Bellcore Compliant Calling Number Identification Circuit Advance Information Features • • • • • • • • • • • Compatible with Bellcore GR-30-CORE, SR-TSV-002476; TIA/EIA-716 and TIA/EIA-777 Pin compatible with MT88E45 Differential input amplifiers with adjustable

M393B5673DZ1-C

Abstract: M393B5170
Contextual Info: Registered DIMM DDR3 SDRAM DDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb D-die 72-bit ECC 82FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

M393B5170DZ1

Abstract: K4B2G04
Contextual Info: Registered DIMM DDR3 SDRAM DDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb D-die 72-bit ECC 82FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: 184PIN DDR333 Unbuffered DIMM 512MB With 32Mx8 CL2.5 TS64MLD64V3F5 Description Placement The TS64MLD64V3F5 is a 64Mx64bits Double Data Rate SDRAM high density for DDR333. The TS64MLD64V3F5 consists of 16pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048

Contextual Info: 184PIN DDR333 Unbuffered DIMM 512MB With 32Mx8 CL2.5 TS64MLD64V3F5 Description Placement The TS64MLD64V3F5 is a 64Mx64bits Double Data Rate SDRAM high density for DDR333. The TS64MLD64V3F5 consists of 16pcs CMOS 32Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048

Contextual Info: 184 PIN DDR400 Registered DIMM 1GB With 64Mx8 CL3 TS128MDR72V4J Description Placement The TS128MDR72V4J is a 128Mx72bits Double Data Rate SDRAM high-density for DDR400. The TS128MDR72V4J consists of 18pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

Contextual Info: 184 PIN DDR333 Registered DIMM 1GB With 64Mx8 CL2.5 TS128MDR72V3J Description Placement The TS128MDR72V3J is a 128Mx72bits Double Data Rate SDRAM high-density for DDR333. The TS128MDR72V3J consists of 18pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

M366S2953MTS

Abstract: M366S2953MTS-C1L M366S2953MTS-C75 M366S3953MTS-C1H
Contextual Info: Preliminary PC133/PC100 Unbuffered DIMM M366S2953MTS M366S2953MTS SDRAM DIMM 128Mx64 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: 204pin DDR3 SDRAM SODIMMs DDR3 SDRAM Unbuffered SODIMMs Based on 1Gb A version HMT164S6AFP R 6C HMT112S6AFP(R)6C HMT125S6AFP(R)8C * Contents are subject to change without prior notice. Rev. 0.2 / Jul. 2008 1 HMT164S6AFP(R)6C HMT112S6AFP(R)6C HMT125S6AFP(R)8C

SM564328574N0BP

Contextual Info: SU564328574N0BP June 21, 2006 Ordering Information Part Numbers Description SM564328574N0BP 32Mx64 256MB , SDRAM, 168-pin DIMM, Unbuffered, Non-ECC, 16Mx8 Based, PC100, CL 2.0 & 3.0, 34.93mm. SG564328574N0BP 32Mx64 (256MB), SDRAM, 168-pin DIMM, Unbuffered, Non-ECC, 16Mx8 Based,

Contextual Info: SM564324574N0BS February 9, 2004 Ordering Information Part Numbers Description SM564324574N0BS 32Mx64 256MB , SDRAM 168-pin DIMM, Unbuffered, 32Mx4 Based, PC133, CL = 2.0 & 3.0, 31.75mm Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

HSD32M64D8KP

Abstract: HANBit HSD32M64D8KP
Contextual Info: HANBit HSD32M64D8KP Synchronous DRAM Module 256Mbyte 32Mx64bit ,DIMM Unbuffered with Based on Stacked 16Mx8, 4Banks, 4K Ref., 3.3V Part No. HSD32M64D8KP GENERAL DESCRIPTION The HSD32M64D8KP is a 32M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists

Contextual Info: V826A64M24SA 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 67,108,864 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 64M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply

ba 5888

Abstract: 100MHZ 133MHZ PC200 V82658J04SATG
Contextual Info: MOSEL VITELIC V82658J04SATG 2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Unbuffered 8,388,608 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 8M x 16 DDR SDRAM in TSOPII-66 Packages