CAPACITOR J38 Search Results

TCP8107

Abstract: u212b ricoh r5c833 RT8203 9lprs9 bg10v mac232 U207A U207B PC821
Contextual Info: 5 4 3 2 1 01_Block Diagram 02_System Setting 03_CPU-PENRYN 1 Penryn 05_CPU-Capacitor 06_NB_-CANTIGA-CPU (1) LVDS LCD 08_NB_-CANTIGA-DDR2 bus (3) P21 09_NB_-CANTIGA-POWER (4) 10_NB_-CANTIGA-POWER (5) 15_SB_-ICH9M(PWR) MXM CONN. 16_SB_-ICH9M-OTHER (Z97V ONLY)

J44-J45

Contextual Info: 19-1554; Rev 0; 9/99 MAX3890 Evaluation Kit Component List DESIGNATION QTY C1–C6, C10, C11, 11 C13, C14, C15 DESCRIPTION 0.1µF ±10%, 25V min ceramic capacitors C7 1 0.33µF ±10%, 16V min, X7R type ceramic capacitor C8, C9, R1, R2, R23, JU6–JU9 Not installed

pdi15

Abstract: 0805CS-560XKBC MAX3890 MAX3890EVKIT J44-J45 R924
Contextual Info: 19-1554; Rev 0; 9/99 MAX3890 Evaluation Kit Component List DESIGNATION QTY C1–C6, C10, C11, 11 C13, C14, C15 DESCRIPTION 0.1µF ±10%, 25V min ceramic capacitors C7 1 0.33µF ±10%, 16V min, X7R type ceramic capacitor C8, C9, R1, R2, R23, JU6–JU9 Not installed

0805CS-560XKBC

Abstract: MAX3890 MAX3890EVKIT J44-J45
Contextual Info: 19-1554; Rev 1; 10/01 MAX3890 Evaluation Kit Component List DESIGNATION QTY C1–C6, C10, C11, 11 C13, C14, C15 DESCRIPTION 0.1µF ±10%, 25V min ceramic capacitors C7 1 0.33µF ±10%, 16V min, X7R type ceramic capacitor C8, C9, R1, R2, R23, JU6–JU9 Not installed

KIC73B24

Abstract: KIC73E27T2
Contextual Info: SEMICONDUCTOR KIC73A/B/C/D/E16~50T/T2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC73A/B/C/D/E*T/T2 Series This IC is a system reset IC built in delay time circuit. KIC73 series is not required with an external capacitor, and then can use a

OM335

Abstract: 860mhz rf amplifier circuit diagram "parameters S" J3841 OM361 HF VHF power amplifier module
Contextual Info: Issued July 1984 J3841 Hybrid rfamplifiers Stocknumbers 308-556, 302-485 Introduction Two hybrid thick film r.f. amplifiers designed for use in mast-head booster amplifiers, as preamplifiers in MATV systems and as general purpose amplifiers for v.h.f. and u.h.f. applications.

MV64460

Abstract: 31F4 TP014 TEA 2025 equivalent I384 header10x2 transistor c548 413 mr 6710 30B2 diode af4 c448 100 12p
Contextual Info: CR-1 : @BUCKEYE_PROJ_LIB.BUCKEYE2 SCH_1 :PAGE1 8 6 7 5 4 3 2 1 TABLE OF CONTENTS PAGE - CONTENTS 1 TABLE OF CONTENTS, POWER SUPPLY LIST 2 BLOCK DIAGRAM 3 POWERPC 750FX ADDRESS BUS 4 POWERPC 750FX DATA BUS 5 POWERPC 750FX CONTROL, JTAG 6 POWERPC 750FX POWER

MV64460

Abstract: HC74 G4 C438 capacitor SDA 5450 c48 31F4 R731 ABB C564 transistor C546 C587 MR 4710
Contextual Info: CR-1 : @BUCKEYE_PROJ_LIB.BUCKEYE2 SCH_1 :PAGE1 8 6 7 5 4 3 2 1 TABLE OF CONTENTS PAGE - CONTENTS 1 TABLE OF CONTENTS, POWER SUPPLY LIST 2 BLOCK DIAGRAM 3 POWERPC 750GX ADDRESS BUS 4 POWERPC 750GX DATA BUS 5 POWERPC 750GX CONTROL, JTAG 6 POWERPC 750GX POWER

WM8960G

Abstract: SMD FET j11 smd diode SM 97 smd transistor j19 resistor pth vishay MCR10EZHE C61 capacitor smd capacitor philips 0805 smd H3 sot363 Y2 series surface mount SMD transistor
Contextual Info: 6158-EV1-REV1 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6158-EV1 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8960 DATE: February 2008 DOC REVISION: Rev 1.1 Customer Information 1 February 2008, Rev 1.1 6158-EV1-REV1 Schematic and Layout

GDM1602A

Abstract: GDM1602 16x2 lcd xiamen BERG 14 pin connector KobiConn lcd gdm1602a 2 pin connector sip2 Xiamen Ocular LCD 16X2 ALPHANUMERIC ST7FLITE39
Contextual Info: STEVAL-CCH002V1 Bill of material Bill of material Designator Qty Reference Value/ generic part number Package Manufacturer U11 1 HDMI/DVI 2:1 switch STHDMI002A TQFP48 STMicroelectronics U35 1 HDMI/DVI 3:1 switch and equalizer STDVE003A TQFP80 STMicroelectronics

resistor SMD footprint

Abstract: multicomp 0603 smd resistor footprint Multicomp 0603 footprint FERRITE BEAD INDUCTOR MC34064 C69 diode sm jack p2 3.5mm wm8804 kp-2012mgc 5W zener diode
Contextual Info: 6201-EV1-REV2 Schematic and Layout DOC TYPE: SCHEMATIC AND LAYOUT BOARD REFERENCE: 6201-EV1-REV2 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8903 DATE: May 2009 DOC REVISION: Rev 1.1 1 May 2009, Rev 1.1 6201-EV1-REV2 Schematic and Layout SCHEMATIC Sheet 1: Top Level

zener smd diode h9

Abstract: smd diode h9 SMD Capacitor product Multicomp N0805R105KCT kp smd transistor multicomp resistor 4.7 usb to phono 7357 schematic diagram phono to usb
Contextual Info: 6162-EV1-REV2 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6162-EV1-REV2 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8940, WM8941, WM8952 DATE: April 2008 DOC REVISION: Rev 1.0 Customer Information 1 April 2008, Rev 1.0 6162-EV1-REV2

C18 ph zener

Abstract: MC 0603 zener C47 PH 7357 Phycomp chip capacitor F1 J37 KP 2010 microSMD035F-2 schematic diagram phono to usb SMD FET j11
Contextual Info: 6162-EV1-REV2 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: 6162-EV1-REV2 BOARD TYPE: Customer Main WOLFSON DEVICE S : WM8940, WM8941, WM8952, WM8974, WM8950 DATE: January 2010 DOC REVISION: Rev 1 1.1 1 Customer Information 1 January2010, Rev 1.1

SO8 24LC32A

Abstract: diode R17 SMA e10 VITA-57
Contextual Info: DEMO MANUAL DC1565A LTC2153-14, LTC2153-12, LTC2152-14, LTC2152-12, LTC2151-14, LTC2151-12, LTC2150-14, LTC2150-12 12-Bit/14-Bit, 170Msps to 310Msps ADCs Description Demonstration circuit 1565A supports a family of 12‑Bit/14‑Bit 170Msps to 310Msps ADCs. Each assem‑

Contextual Info: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency

IS-136

Abstract: MAX2369 MAX2369EGM VCO work at 15GHZ 780MHZ
Contextual Info: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with

Contextual Info: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency

diode varactor B11

Abstract: maxim vco 2000 -2200 MHz 903d IS-136 MAX2369 MAX2369EGM
Contextual Info: 19-1924; Rev 0; 1/01 Complete Dual-Band Quadrature Transmitter The MAX2369 is a dual-band, triple-mode complete transmitter for cellular phones. The device takes a differential I/Q baseband input and mixes it up to IF through a quadrature modulator and IF variable-gain amplifier

031pf

Contextual Info: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with

IEC802

Abstract: 188g
Contextual Info: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with

QFN-48 pin 49

Contextual Info: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with

RR1220P-102-D

Abstract: D58764 HSF-141C-35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR

HSF-141C-35

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR

LMX243x

Abstract: TA 70/04 AN-1275 LMX2434 PLL 2400 MHZ
Contextual Info: National Semiconductor Application Note 1275 Ahmed Salem May 2003 Abstract The following note describes how maximum power can be delivered from the Voltage Controlled Oscillator VCO output to the FinRF input of a LMX243x frequency synthesizer by means of performing a single element match.