CAPACITOR CERAMIC VARIABLE RF Search Results

CVDD-100-15S

Abstract: capacitor variable ceramic
Contextual Info: Vacuum Variable Capacitor Family CVDD 100, 150 CVDD 100, 150 SPECIFICATIONS Model Number Capacity Range pF Voltage (kV) Peak Test Working Current Amps (RMS) Max. Type CVDD-100-7.5S 10-100 7.5 CVDD-100-10S 10-100 10 4.5 55 Ceramic 6.62 / 168.15 2.44 / 62.00

C1005X5R1A104M

Abstract: C1005X7R1H222K C1005C0G1H330J ABE mark MAX4000 MAX4000EBL MAX4001 MAX4001EVKIT MAX4002 MAX4002EBL
Contextual Info: 19-2574; Rev 0; 9/02 MAX4001 Evaluation Kit Features ♦ 2.7V to 5.5V Single-Supply Operation ♦ 50Ω SMA Connector on RF Input ♦ Low-Profile Design 0.65mm, max ♦ On-Board Quasi-Measurement Mode Circuitry ♦ On-Board Shutdown Control ♦ Ultra-Compact Solution

sumida ift coil

Abstract: Sumida LC IF 455 khz sumida FM BPF SNY-2102 IFT 455 RF Mixer for 10.7 MHz sumida 455 fm variable capacitor sumida variable coil IFT21SO-2173-147 sumida FM
Contextual Info: BA4412 FM front end The BA4412 IC is used as a front end for FM radio receivers. It can be used in a wide variety of equipment, from portable radios to home stereo tuners. Dimensions U n its: mm BA4412 (SIP9) 2.8±0.2 2I.8±0.2 The BA4412 is equipped with an RF

Contextual Info: SD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 30 WATTS 28 VOLTS 9.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2904 is a gold metallized N-Channel MOS

SC15010

Abstract: SC-15010 10pf Capacitor dimension 20NE50 atc100b6r2 20 NE 50 200 pF air variable capacitor sc15000 10pf ceramic CAPACITOR variable resistor surface mount
Contextual Info: SD57030-01 RF POWER TRANSISTORS The Ldm oS T FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION • P o u t = 30 W with 13 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57030-01 is a common source N-Channel

variable capacitor

Abstract: air variable capacitor capacitor 47pf GPS ceramic chip 8 ohm 1w capacitor ceramic variable RF Ceramic Resistor 5W PD57045S SURFACE MOUNT RESISTOR Wire wound resistor 5W
Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

BPWB6A

Abstract: ba4236l common base amplifier circuit designing SNY-2102 ba4236 BA4412 amplifier mixer circuit sumida ift coil FEM10C soshin bpf
Contextual Info: Audio ICs FM front end BA4412 •Applications FM radios Radio cassette players Home stereos •Features 1 Wide operating voltage range : 2 to 8V. 2) An RF amplifier, mixer, oscillator, oscillator input buffer, IF amplifier, and AFC variable capacitordiode are all housed in a 9-pin SIP package. Con­

nrf401

Abstract: bst 4,000mhz SLH-34VR TCA07F SLH34YY AT90S1200 JP201 N-7075 SLH-34MG SLH-34
Contextual Info: PRODUCT SPECIFICATION Q5 ' 02 nRF401 Demo Board Kit *(1(5$/ '(6&5,37,21 This document describes the nRF401-DEMO demonstration board kit used with Nordic VLSI’s Q5) Single chip 433MHz RF Transceiver. Figure 1. The Q5) Demo Board kit Nordic VLSI ASA

Contextual Info: TOSHIBA 2SK1028 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 028 RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER • O utput Power Po^lOOW Min. • Drain Efficiency 7D = 70%(Typ.) • Frequency f= 230MHz M A XIM U M RATINGS (Tc = 25°C)

LDB15C500A

Contextual Info: 19-1882; Rev 0; 12/00 MAX2700/MAX2701 Evaluation Kits Features ♦ Easy Evaluation of MAX2700/MAX2701 ♦ +2.7V to +3.3V Single-Supply Operation ♦ RF Ports Matched to 1960MHz MAX2700 ♦ RF Ports Matched to 2400MHz (MAX2701) ♦ SMA Connectors for All RF Signal Ports

balun 50 ohm

Abstract: 200B 700B SD56120 TSD56120 860 z2 resistor 47 ohm
Contextual Info: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 100 W WITH 14 dB GAIN @ 860 MHz M246 epoxy sealed • BeO FREE PACKAGE

air variable capacitor

Abstract: carbon variable resistor variable capacitor 100 ohm Variable Resistor 1/4W capacitor ceramic variable RF capacitor variable Z1 SURFACE MOUNT 200B 700B SD56120
Contextual Info: SD56120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 100 W WITH 14 dB GAIN @ 860 MHz M246 epoxy sealed • BeO FREE PACKAGE

resistor 1 k ohm

Abstract: OZ 960 balun 50 ohm C15C3
Contextual Info: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs n EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed

Contextual Info: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs n EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed

200B

Abstract: 20AWG 700B M252 SD57120
Contextual Info: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING

Contextual Info: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed

c35 transistor

Contextual Info: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed

30pf variable capacitor

Abstract: Ceramic Capacitor 30pF VHF TV BROADCAST TRANSMITTER 5 - 30pf variable capacitor 2SK1028 variable capacitor 230MHZ VHF BROADCAST 230mH variable capacitor 47pf
Contextual Info: TOSHIBA 2SK1028 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 028 RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER • • • Output Power Drain Efficiency Frequency Po^l00W Min. 7 d ~ 70% (Typ.) f= 230MHz MAXIMUM RATINGS (Tc = 25°C)

BA4424N

Abstract: BPF filter rf RF Amplifier amplifier mixer circuit diagram sip 9 pin ics audio mixer ic transistor for RF amplifier and mixer characteristics of mixer circuit diagram amplifier mixer circuit audio amplifier protect ic
Contextual Info: Audio ICs FM / TV front end BA4424N The BA4424N is a monolithic IC designed for FM front end use. It consists of an RF amplifier circuit, mixer circuit, local oscillation circuit, IF buffer amplifier, and a variable capacitor-diode for AFC. FFeatures 1 An RF amplifier, mixer, local oscillator, IF buffer amplifier, and AFC diode are included on-chip.

Contextual Info: SD2902 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 15 WATTS 28 VOLTS 12.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2902 is a gold metallized N-Channel MOS

erie feedthrough capacitors

Abstract: ERIE ceramic capacitor variable capacitor erie capacitor ERIE ceramic thomson capacitor AM80912-085 S042 CAPACITOR 1500 Erie feedthrough
Contextual Info: AM80912-085 . . . . RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 85 W MIN. WITH 7.5 dB GAIN

Contextual Info: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power

5W 6.8 ohm k ceramic resistor

Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r
Contextual Info: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

200B

Abstract: 700B SD56120 balun 50 ohm
Contextual Info: SD56120 RF power transistor, the LdmoST family Features • Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power