CAPACITANCE DIODE MARKING T1 Search Results

smd code marking 777

Abstract: BB155 SMD MARKING CODE 1C marking code pe
Contextual Info: Philips Semiconductors Product specification Low-voltage variable capacitance diode BB155 FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance -n - • Very small plastic SMD package. APPLICATIONS Marking code: PE. • Voltage controlled oscillators

marking code T1

Abstract: capacitance diode marking T1 BB669WS
Contextual Info: BB669WS SILICON TUNING DIODE PINNING Features • Very high capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure PIN DESCRIPTION 1 Cathode 2 Anode 2 1 T1 Top View Marking Code: "T1"

marking code T1

Abstract: capacitance diode marking T1 irf 615
Contextual Info: BB669WS SILICON TUNING DIODE PINNING Features • Very high capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure PIN DESCRIPTION 1 Cathode 2 Anode 2 1 T1 Top View Marking Code: "T1"

diode J2 marking code

Abstract: VPS05176 diode marking j2 Q62702B diode 1-35 j2 capacitance diode marking T1 DIODE J2
Contextual Info: SIEMENS BB 639C Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners 1 VPS05176 1 o - M — 2 o EHA07001 Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1 =C 2=A SOD-323 Maximum Ratings

Contextual Info: SIEMENS BB 835 Silicon Tuning Diode Preliminary data Features Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio 2 5:1 Type BB 835 Marking yellow X Ordering Code tape and reel 1 Q62702-B802 C Pin Configuration

NXP SMD ZENER DIODE MARKING CODE

Abstract: placeholder for manufacturing site code
Contextual Info: SO T1 43 B PRTR5V0U2AX Ultra low capacitance double rail-to-rail ESD protection diode Rev. 3 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge ESD protection diode in

marking code T1

Abstract: capacitance diode marking T1 smd diode 615 marking code "T1" DIODE smd 434
Contextual Info: BB669ST SILICON TUNING DIODE FEATURES PINNING ● Very high capacitance ratio ● Low series resistance 1 Cathode Excellent uniformity and matching due to 2 Anode ● PIN DESCRIPTION “in-line” matching assembly procedure 1 T1 APPLICATIONS ˙ For VHF 2-Band-hyperband-TV-tuners

Contextual Info: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4

diode a4p

Abstract: a4p sot-23 A4P marking code BAV70 BAW62 philips sot-23 bav70 ScansUX40
Contextual Info: 71]iOAc?b 00kfl321 T14 HPHIN BAV70 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.

Q62702-X148

Abstract: capacitance diode marking T1
Contextual Info: Silicon PIN Diode ● Microwave attenuator diode ● Linear RF characteristic BXY 44K Type Marking Ordering Code Pin Configuration Package1 BXY 44K – Q62702-X148 Cathode: black dot, heat sink T1 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

PROTEK SO-8 DEVICE MARKING

Abstract: PLC03-6 marking PBA
Contextual Info: ® PLC03-6 . . . . . Engineered solutions for the transient environment TELECOM DIODE BRIDGE/ TVS ARRAY IEC 1000-4 COMPATIBLE APPLICATIONS ● ● ● ● ● T1/E1 Line Cards ISDN U-Interfaces ADSL & HDSL Interfaces ISDN S/T Interfaces RS-485, 100 Base T & Category 5 Interface Circuits

Contextual Info: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.078 @ VGS = −10 V −3.2 0.130 @ VGS = −4.5 V −2.5 VDS (V) −30 30 D TrenchFETr Power MOSFET D RoHS Compliant TO-236 (SOT-23) G 1 3 S Ordering Information: Si2307BDS-T1—E3 (Lead (Pb)-Free)

Si2302ADS-T1-E3

Abstract: Si2302ADS Si2302ADS-T1
Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Si2302ADS-T1-E3 (Lead (Pb)-free)

Q62702-B195

Contextual Info: Silicon Tuning Varactor BBY 35 F ● Hyperabrupt junction tuning diode ● Frequency linear tuning range 4 … 12 V ● High figure of merit Type Marking Ordering Code Pin Configuration Package1 BBY 35 F – Q62702-B195 Cathode: black dot, heat sink T1 Maximum Ratings

nbs16

Abstract: esd07
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ Applications RoHS Compliant* ESD protection >40k V Protects 2 lines Low capacitance - 15 pF T1/E1 Ports Ethernet Ports Wireless LANs xDSL Equipment ■ ■ ■ ■ CDNBS16-PLC05-6 – Low Capacitance TVS Diode Array

Si2307BDS-T1-E3

Abstract: Si2307BDS
Contextual Info: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.078 @ VGS = −10 V −3.2 0.130 @ VGS = −4.5 V −2.5 VDS (V) −30 30 D TrenchFETr Power MOSFET D RoHS Compliant TO-236 (SOT-23) G 1 3 S Ordering Information: Si2307BDS-T1—E3 (Lead (Pb)-Free)

Si3442BDV

Abstract: Si3442BDV-T1-E3 tOP MaRKinGS
Contextual Info: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 RoHS COMPLIANT TSOP-6 Top V iew 3 mm 1 6 2 5 3 4 (1, 2, 5, 6) D (3) G 2.85 mm (4) S Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)

NBS16

Abstract: CDNBS16-PLC05-6 IEC61000-4-4
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ Applications RoHS Compliant* ESD protection >40k V Protects 2 lines Low capacitance - 15 pF T1/E1 Ports Ethernet Ports Wireless LANs xDSL Equipment ■ ■ ■ ■ CDNBS16-PLC05-6 – Low Capacitance TVS Diode Array

Si3442BDV

Abstract: Si3442BDV-T1-E3
Contextual Info: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 RoHS COMPLIANT TSOP-6 Top V iew 3 mm 1 6 2 5 3 4 (1, 2, 5, 6) D (3) G 2.85 mm (4) S Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)

NBS16

Abstract: CDNBS16-PLC05-6 IEC61000-4-4
Contextual Info: PL IA NT Features *R oH S CO M • ■ ■ ■ Applications RoHS Compliant* ESD protection >40k V Protects 2 lines Low capacitance - 15 pF T1/E1 Ports Ethernet Ports Wireless LANs xDSL Equipment ■ ■ ■ ■ CDNBS16-PLC05-6 – Low Capacitance TVS Diode Array

NBS16

Abstract: CDNBS16-PLC05-6 IEC61000-4-4 SO16 footprint
Contextual Info: PL IA N T Features *R oH S CO M • ■ ■ ■ Applications RoHS Compliant* ESD protection >40k V Protects 2 lines Low capacitance - 15 pF T1/E1 Ports Ethernet Ports Wireless LANs xDSL Equipment ■ ■ ■ ■ CDNBS16-PLC05-6 – Low Capacitance TVS Diode Array

3304N

Abstract: CDDFN10-3304N DFN10 DFN-10 diode T3 Marking
Contextual Info: NT IA PL M CO S oH *R Features Applications • Lead free as standard ■ FireWire, T1/E1, T3/E3 chip side protection ■ RoHS compliant* ■ Digital Visual Interface DVI ■ Low capacitance - 4 pF ■ Ethernet 10/100/1000 Base T ■ ESD protection >24 kV

Contextual Info: International ja g Rectifier 4655452 DOlSlOb T12 « I N R HEXFET P o w e r M O S F E T • • • • • PD-9.831 _ IRFI614G IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist.= 4.8mm

Contextual Info: PL IA NT CO M *R oH S Features Applications • Low capacitance - 4 pF ■ FireWire, T1/E1, T3/E3 chip side protection ■ IEC 61000-4-2 ESD ■ Digital Visual Interface (DVI) ■ IEC 61000-4-4 (EFT) ■ Ethernet 10/100/1000 Base T ■ IEC 61000-4-5 (Surge)