C848A Search Results

S3C848A

Abstract: S3P848A S3C848 FM24653 ISO-14001 lcd t-con circuit P8-48 c848a
Contextual Info: S3C8489/C848A/P848A 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 S3C8489/C848A/P848A i Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no

S3C848

Abstract: S3C848A S3P848A C848A FM24653 ISO-14001
Contextual Info: S3C8489/C848A/P848A 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 S3C8489/C848A/P848A i Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no

D2150

Abstract: NPN transistor ECB TO-92 PT10m BTD2150A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2006.03.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA

D882S

Abstract: TRANSISTOR D882S NPN transistor ECB TO-92 BTB772SA3 BTD882SA3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2004.01.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882SA3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics

D2150

Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA

BC848R

Contextual Info: BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A C o lle c to r-e m itte r voltage V g E = 0 C o lle c to r-e m itte r voltage (open base) C o lle c to r cu rre n t (peak value)

B 660 TG

Abstract: BCB46B C848B C848A C848C BC848A EO65
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors B C 8 4 6 A L T 1 ,B L T 1 BC8 4 7 A LT1, B L T 1 ,C L T 1 th ru B C 8 5 0 B L T 1 ,C L T 1 NPN Silicon 2 EMITTER BCB46, B C 847 and B C 848 are M o to rola P referred D ev ice s MAXIMUM RATINGS

BC848

Abstract: BC847
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,

SOT-23 1GP

Abstract: KP SOT23 Code KP SOT23 1Fp on
Contextual Info: BC846 BC847 BC848 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. Q U IC K R EFE R E N C E D A T A BC847 BC848 80 50 30 V V C o lle c to r-e m itte r voltage V b e = 0

Contextual Info: Transistors Reel = 500pcs. SOT23 Case NPN Bag = 100pcs' m i n iR e e l O rd e r Type R a tin g s m in iB a g N um ber V j • O rd e r M d VCEO Ic hpE @Ic fx P a rt V mA M in -M a x V ce (M H z ) M a rk in g 25V 500m A N u m b e r K iS S S ! N P N G e n e ra l P u rp o se