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    D1805

    Abstract: BTD1805I3
    Contextual Info: Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2009.02.04 Page No. : 1/ 5 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 BVCEO IC RCESAT 60V 5A 100mΩ Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting


    Original     		c820i3btd1805i3ul94v-0d1805 PDF

    d1805

    Abstract: BTD1805I3
    Contextual Info: Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2005.07.26 Page No. : 1/ 4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting


    Original     		c820i3btd1805i3o-251ul94v-0+1d1805 PDF