C80 DIODE Search Results

c80m

Abstract: ERC80M-004
Contextual Info: E R C80 M - 0 0 4 5A ì± ^ « * ^ ì-k ' > 3 ' y b j r —' V J T f * - i K : Outline D raw ings 4-5 MAX. SCHOTTKY BARRIER DIODE 2.0 : Features JEDEC EIAJ Insulate d p a cka g e by fu lly m o ld in g . SC-67 • fcV r L ow Vp C onnection Diagram S u per h ig h speed s w itc h in g .

Contextual Info: E R C80 M- 0 0 4 5A ì± ^ « * ^ ì-k ' > 3 ' y b j r —' V J T f * - i K : O u tlin e D ra w in g s 4-5 MAX. SCHOTTKY BARRIER DIODE 2.0 : Features JEDEC EIAJ Insulated pa c ka g e by fully m o ld in g . SC-67 • fcV r L ow Vp C o n n e c tio n D ia g ra m

R2532

Abstract: MEC8-150-02-L-D-EM2 CR16-4751FM r-2532 philips cr16
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 890B FastDAACS Item 1 2 3 Qty 3 Reference C80,C81,C89 C94 Opt C88 (Opt) 4 1 C88 5 6 1 9 7 8 9 10 1 5 1 15 11 43 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1 5 1 1 1 3 9 1 2 2 1 1 1 C36 C1,C2,C32,C35,C38,C76,C78,

C60N, C10

Abstract: C60N steel C60N C60N c10 C40N C25N high voltage capacitor .05 uF 8000v C60N c C15N EMI photomultiplier
Contextual Info: “Innovation , not imitatio n” C SERIES MINIATURE, REGULATED HIGH VOLTAGE DC TO DC CONVERTERS 0 TO +/-100 THROUGH 0 TO +/-8000 VDC @ 1 WATT PRODUCT SELECTION TABLE PRODUCT DESCRIPTION Miniature, well regulated high voltage power supplies provide clean and reliable high voltage in a shielded, pc mount package. Featuring

CSA-C22

Contextual Info: UEI30 Series www.murata-ps.com 30W Isolated Wide-Range DC/DC Converters Featuring a full 30 Watt output in 1.8 square inches of board area, the UEI series isolated DC/DC converter family offers efficient regulated DC power for printed circuit board mounting.

ohmite 408 e resistor

Abstract: UEI30-033-Q48P-C
Contextual Info: UEI30 Series www.murata-ps.com 30W Isolated Wide-Range DC/DC Converters Featuring a full 30 Watt output in 1.8 square inches of board area, the UEI series isolated DC/DC converter family offers efficient regulated DC power for printed circuit board mounting.

Contextual Info: MbflhSEb 0 0 0 1 5 3 3 'ìlb * I X Y IXSN51N60AU1 IGBT with Diode IC25 VCES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V Preliminary data (09/93) Maximum Ratings Symbol Test Conditions v" c e s Tj = 25'C to 150‘C 600 V v COR Tj = 25’ C to 150‘C; RGE= 1 Mi2

vub 70

Abstract: vub 70 -16 mj 1032 ic ca 747 ixys vub 70 -16
Contextual Info: VUB 60 with IGBT and FRED for Braking System 6 5 Preliminary data VRRM V 2 VUB 60 - VRRM IF AV M IFRMS TH = 110°C, sinusiodal 120° limited by construction Rectifier Diodes Test Conditions I2 t 4 VUB 60 - Symbol I FSM 1 2 1 7 9 1200 12 NO1 1600 16 NO1 4 5

CY7B199-12

Abstract: LVT16245 SN74ACT3632-15 TMS27C040 TMS55160-70 SDRAM 1994 Texas Instruments U58 248 vram 32k 1995 AND sdram AND SN74LVT16244
Contextual Info: Memory Interface on TMS320C8x Literature Number: BPRA069 Texas Instruments Europe December 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest

smd optocoupler

Abstract: TCMT1030 TCMT1031 TCMT1032 TCMT1033 TCMT1034 TCMT10
Contextual Info: TCMT1030 Series TELEFUNKEN Semiconductors SMD Optocoupler with Phototransistor Output Description The TCMT1030 Series consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 8 lead plastic dual inline packages. 95 10829

Contextual Info: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

MOC211

Abstract: OC211 OC212M
Contextual Info: Temic MOC211-213 S e m i c o n d u c t o r s Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The M O C series consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in

MOC215

Abstract: MOC217 11755 MOC216
Contextual Info: MOC215-217 Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The MOC series consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in an 8-lead plastic dual inline packages small outline .

Contextual Info: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1200 V VCES = 600 V VCES = 650 V I DAV = 119 A I C25 I FSM = 360 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number

TCMT1030

Abstract: TCMT1033 TCMT1031 TCMT1033-GS12 11755 TMCT1033
Contextual Info: TCMT1030 Series Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The TCMT1030 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead plastic dual inline package small

MOC211

Abstract: MOC213 11755 MOC212
Contextual Info: MOC211–213 Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The MOC series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead plastic dual inline packages small outline .

2SB1390

Abstract: 2SB1103
Contextual Info: HITACHI 2SB1390-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Item S ym b o i Rating Unit Collector to base voltage VcBO -60 V Collector to emitter voltage VCEO -60 V Emitter to base voltage V EBO -7 V

MIXA225PF1200TSF

Contextual Info: MIXA225PF1200TSF preliminary XPT IGBT Module VCES = 2x 1200 V I C25 = 360 A VCE sat = 1.8 V Phase leg + free wheeling Diodes + NTC Part number MIXA225PF1200TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F

MIXA300PF1200TSF

Contextual Info: MIXA300PF1200TSF tentative XPT IGBT Module VCES = 2x 1200 V I C25 = 465 A VCE sat = 1.8 V Phase leg + free wheeling Diodes + NTC Part number MIXA300PF1200TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F

MIXA450PF1200TSF

Contextual Info: MIXA450PF1200TSF XPT IGBT Module VCES = 2x 1200 V I C25 = 650 A VCE sat = 1.8 V Phase leg + free wheeling Diodes + NTC Part number MIXA450PF1200TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

MIXA300PF1200TSF

Contextual Info: MIXA300PF1200TSF tentative XPT IGBT Module VCES = 2x 1200 V I C25 = 465 A VCE sat = 1.8 V Phase leg + free wheeling Diodes + NTC Part number MIXA300PF1200TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F

MIXA225PF1200TSF

Contextual Info: MIXA225PF1200TSF preliminary XPT IGBT Module VCES = 2x 1200 V I C25 = 360 A VCE sat = 1.8 V Phase leg + free wheeling Diodes + NTC Part number MIXA225PF1200TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F