C60 6 PIN Search Results

G0225

Contextual Info: SGRAM MODULE M965G0225MP Q 0 / M966G0225MP(Q)0 M965G0225MP(Q)0 / M966G0225MP(Q)0 SGRAM SODIMM 2Mx64 SGRAM SODIMM based on 1Mx32, 2K Refresh, 3.3V Synchronous Graphic RAMs FEATURE GENERAL DESCRIPTION • Performance range Part NO. M965(6)G0225MP(Q)0-C50 M965(6)G0225MP(Q)0-C60

Contextual Info: SGRAM MODULE M965G0115MP Q 0 / M966G0115MP(Q)0 M965G0115MP(Q)0 / M966G0115MP(Q)0 SGRAM SODIMM 1Mx64 SGRAM SODIMM based on 1Mx32, 2K Refresh, 3.3V Synchronous Graphic RAMs FEATURE GENERAL DESCRIPTION • Performance range Part NO. M965(6)G0115MP(Q)0-C50 M965(6)G0115MP(Q)0-C60

C60-10

Abstract: C60-20 C60-30 C60-40 SC60
Contextual Info: lll»lliire€if@ti ii S@if®i S t a t e R e iiiw € 6 S e r ie s ^V^TELEDYNE RELAYS OPTICALLY ISOLATED 0.5 to 2.5 A Comm ercial DIP Solid State R elays Part Number Relay Description C60 Solid State Relay, Terminals for Through Hole Mount SC60 Solid State Relay, Terminals for Surface Mount

HL12

Contextual Info: Evaluation Board for Quad Low Noise, Low Cost, Variable Gain Amplifier AD8335-EVAL FEATURES INTRODUCTION Factory tested and ready to use SMA input and output connectors 8 Output test pins for differential probe Configurable jumpers for user opions: Preamp enables

40178

Abstract: 40408 binary counter 4017B 4 digit up counter diagram 4022B 4017-B 4029B 4020B 40188 4018B
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-CMOS C56 4020B C57 4022B Q4 _ 7 CP CP MR Qq Q 3 Q4 Q5 Q6 Q7 q8 MR q 1 0 q 11q 1 2 ° 1 3 I I I I I I I I I I I I I II 9 7 5 6 4 13 12 14 15 1 2 °0 °1 °2 15 2 1 3 V DD = p in 16 V DD V SS " Pin 8 V SS 10 I D Q5-9

C60 6 pin

Abstract: c60 equivalent C60-20 C60-10 C60-30 C60-40 SC60 bi-directional switches FET c6010
Contextual Info: Series C60 Optically Isolated 0.5 to 2.5A Bi-Directional Solid-State Relay Part Number Relay Description C60 Solid-State Relay, Terminals for Through Hole Mount SC60 Solid-State Relay, Terminals for Surface Mount ELECTRICAL SPECIFICATIONS 25°C UNLESS OTHERWISE SPECIFIED

Contextual Info: REV. Status T 1 / E 1 / C E P T / I S D N - P R I Magnetic Module, Multi Port, 40 pin SOIC REVISION 0 8 / 1 7 / 0 4 LL • Complies with UL60950 • Surface Mount Device withstands IR reflow profile process • Extended operating temperature: —40‘C to + 8 5 ‘C

RCM5710

Abstract: RCM5750 sync rs-485 SDLC RCM5700 RCM5760 PH C24 rabbit 5000
Contextual Info: MiniCore RCM5700 Module Ultra-Compact Serial to Ethernet Module The MiniCore RCM5700 offers a low-cost, ultra-compact, pin-compatible Ethernet control and communications solution for your embedded design. Overview The MiniCore RCM5700 family offers an integrated software and

bi-directional switches FET

Abstract: C60-10 SC60 C60-20 C60-30 C60-40
Contextual Info: Series C60 Optically Isolated 0.5 to 2.5A Bi-Directional Solid-State Relay Part Number Relay Description C60 Solid-State Relay, Terminals for Through Hole Mount SC60 Solid-State Relay, Terminals for Surface Mount ELECTRICAL SPECIFICATIONS 25°C UNLESS OTHERWISE SPECIFIED

bi-directional switches FET

Abstract: c60 equivalent C60-Series
Contextual Info: Bi-Directional Solid State Relay C60 Series OPTICALLY ISOLATED 0.5 to 2.5 A Part Number Relay Description C60 Solid State Relay, Terminals for Through Hole Mount SC60 Solid State Relay, Terminals For Surface Mount ELECTRICAL SPECIFICATIONS 25°C UNLESS OTHERWISE SPECIFIED

AFC8513

Abstract: afpxc30pd E30R 60870-5-104 FP0-E32RS FP0E32RS fp-x c14r AFPX-a21 AFPX-C60TD optokoppler PNP
Contextual Info: FP-X Serie Speicherprogrammierbare Steuerungen 02/2008 Leistungsstark Leistungsstark Vielfältige Erweiterungsmöglichkeiten und hohe Geschwindigkeit Schnellste Befehlsabarbeitung Die Befehlsbearbeitungszeit für einen Basisbefehl beträgt 0,32 s ca. 2ms für 5000 Schritte *1

C60-10

Abstract: C60-X0 bi-directional switches FET SC60-X0 C60-20 C60-30 C60-40
Contextual Info: Series C60 Optically Isolated 0.5 to 2.5A Bi-Directional Solid-State Relay Part Number Relay Description C60-X0 Solid-State Relay, Terminals for Through Hole Mount SC60-X0 Solid-State Relay, Terminals for Surface Mount Add suffix 01 to denote 60Sn/40Pb Pre-Tinned Leads

A798

Contextual Info: Philips Semiconductors Product specification LCD controller/drivers PCF2116 family 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 3.1 Packages 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 9.3 9.4 9.5 9.6 9.7 9.8 9.9 9.10 9.11 6 PINNING 10 7 PIN FUNCTIONS INTERFACE TO MICROCONTROLLER

fp1 PLC programming

Abstract: FP0-E32RS fp3 matsua Panasonic PLC FP communication marking code c14r fp3 matsushita AFPX-C30TD c14t EN61131-2 FP10SH
Contextual Info: • FP-X Control Unit Dimensions Unit: mm Dimensions when add-on cassettes (function and communication) are installed ●AFPX-C14 ∗ ∗ (The same dimensions apply to the expansion I/O unit AFPX-E16∗) COM Status display LED N X5 X3 X0 X2 X4 X7 X6 PROG. ERR.

ic 8035

Abstract: T 168 509u T168
Contextual Info: 1273 Series PCMCIA IC Memory Card Plug,Double Deck Ordering Information: in ch 1273 D_ X A S G C 0 1 Pin Type DETECT GENERAL POWER Dim. L ±0.10 .004 3.50(.138) 4.25Í.167) 5.00(. 197) 2 3 4 5 6 7 8 1. Series No. 2. D = Double deck 3. P.C.B. m ou n tin g :

c60 equivalent

Abstract: dram 4mx4 kmm5364
Contextual Info: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C

Contextual Info: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D

Contextual Info: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C

Contextual Info: DRAM MODULE M53620812DW0/DB0 M53620812DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812D

Contextual Info: M53230800DW0/DB0 M53230810DW0/DB0 DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 Fast Page Mode with EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D

Contextual Info: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C

Contextual Info: C60 S eries ^'TELED YN E RELAYS CHARACTERISTIC CURVES VOLTS CONTROL CURRENTVS. VOLTAGE FIGURE 1 FIGURE 2 INPUT CURRENT mA TYPICAL TURN-ON TIME VS. INPUT CURRENT FIGURE 4 FIGURE 3 (SEE NOTE 3) MECHANICAL SPECIFICATION WIRING CONFIGURATIONS si is BB DATE CODE

64mb edo dram simm

Abstract: K4E160411C
Contextual Info: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C

2C59

Abstract: 4052B
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-CMOS C57 4022B C56 4020B V'D nD n = Pm vs s = Pm 8 C58 4017B C59 4018B 10 2 D PL 3D CP Q 5 .9 — 14- CP I 3I 2I 4I 7I 10I 1I 5I I I I 15 7 9 12 P0 P, P2 P3 P4 MR Q0 Q 1 ° 2 ° 3 ° 4 15 r m Pin 16 5 4 v dd