C5750X7R2E105M Search Results

Contextual Info: C5750X7R2E105M230KA TDK Item Description : C5750X7R2E105MT* DC Bias Characteristic 10 Application & Main Feature Cap. Change/% Commercial Grade Mid Voltage (100 to 630V ) Series C5750 [EIA CC2220] -10 -20 -30 -40 -50 -60 -70 -80 -90 50 100 150 200 250

ic regulator 7815

Contextual Info: MIC5281 120VIN, 25mA, Ultra-Low IQ, High-PSRR Linear Regulator General Description The MIC5281 high-performance linear regulator offers a very-wide input operating voltage range, up to 120V DC, and supplies an output current of up to 25mA. Ideal for high input voltage applications such as industrial

C3216C0

Abstract: C3225X7S2A475K C1005 C1608 C2012 C3216 C3225 C4532 C3216C0G2J CC0805
Contextual Info: C Series Mid Voltage Application Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: January 2011 TDK MLCC US Catalog Version A11 REMINDERS Please read before using this product

CKD310

Abstract: CGA3E C3216X7R2E473KT CKD310JB0J226S CC01005 AEC-Q200 C1005 C1608 C3216 CC0201
Contextual Info: TDK MLCC US Catalog Version A10 This page is intentionally left blank. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ General Application, C Series Mid Voltage Application, C Series High Voltage Application, C Series High Temperature Application, C Series Tight Tolerance Capacitor, C Series

C3216X7R2J472M115AA

Abstract: C3225X7S2A475K200AB C4532X7T2J224M200KC C2012X7T2V103K C4532JB2E334M C3225C0G2J682J200AA C4532X7T2J304M c3216c0g C3225C0G2A223J160AA c5750x7s2a156m250kb
Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series Mid Voltage 100 to 630V Capacitors Type: Issue date: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] January 2013 TDK MLCC Global Catalog

Contextual Info: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency

EGN26C070I2D

Contextual Info: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Mid Voltage 100 to 630V Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Oct 2013 004-01 / 20131003 / mlcc_commercial_midvoltage_en

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Aug 2013 C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] CKCN27 [EIA CC0302]

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: MIC5281 120VIN, 25mA, Ultra-Low IQ, High-PSRR Linear Regulator General Description The MIC5281 high-performance linear regulator offers a very-wide input operating voltage range, up to 120V DC, and supplies an output current of up to 25mA. Ideal for high input voltage applications such as industrial

Contextual Info: MIC5281 120VIN, 25mA, Ultra-Low IQ, High-PSRR Linear Regulator General Description The MIC5281 high-performance linear regulator offers a very-wide input operating voltage range, up to 120V DC, and supplies an output current of up to 25mA. Ideal for high input voltage applications such as industrial

Contextual Info: MIC5282YMME Evaluation Board 120VIN, 50mA, Ultra Low IQ, High-PSRR LDOs General Description The MIC5282 is a high-performance, low-dropout linear regulator featuring a very-low noise output and a very-wide input voltage range 6V to 120V . The MIC5282 supplies

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Soft Termination Type: C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] Issue date: Mar 2014

C3225X7R2A225

Abstract: CC2220 X7T voltage MLCC CRACK C5750X7S2a c5750x7t2 CC1210 106 capacitor 450v 10MF C3225X7s tdk capacitors c5750
Contextual Info: C Series Soft Termination Type Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: April 2011 TDK MLCC US Catalog Version B11 REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS

3216 B 10uF

Abstract: 2012X7R CC0805 100V 2.2nF C5750X7S2A106M 125AE
Contextual Info: Multilayer Ceramic Chip Capacitors For automobile Resin terminations C series Type: C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2011 • All specifications are subject to change without notice.

C5750X7S2A106M

Abstract: MLCC CRACK tdk c3216 250V X7T voltage c4532x7t2e105m C3216X7S2A225M X7T 630V C3216 TDK TH SERIES C5750
Contextual Info: C Series Soft Termination Type Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: April 2011 TDK MLCC US Catalog Version B11 REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS

2E105K

Abstract: C5750JB2J224K C5750X7R2J224M C5750X7R2A-475M 2E105 C5750X7R2E105K C5750JB2A475K C5750X7R2A475K cc2220
Contextual Info: 15/16 C Series C5750 (EIA CC2220) Type Conformity to RoHS Directive FEATURES • The unique design structure for mid voltage enables a compact size with high voltage withstanding. • Rated voltage Edc: 100, 250 and 630V. • C5750 type is specific to reflow soldering.

B4846

Abstract: S21 Package GRM188B11H102KA01D CS3376C
Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

GRM1882C1H100J

Contextual Info: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

C3225X7S2A475K

Abstract: C3216X7T2W104K C3216X7T2J473K C3225X7T2J104K C5750X7S2A106M C1608 C2012 C3225 C4532 CC0805
Contextual Info: C Series Mid Voltage Application Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: April 2011 TDK MLCC US Catalog Version B11 REMINDERS Please read before using this product

6-10 Ghz RF Power 100w amplifier

Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

CC0603

Abstract: C1608 C5750JB2A475K C3216X7R2A105M
Contextual Info: 1/16 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification.