C5 47 SOT89 Search Results

BGA6289

Abstract: BGA2031
Contextual Info: BGA6289 MMIC wideband medium power amplifier Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description The BGA6289 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal

SXA-389B

Abstract: Sirenza amplifier SOT-89 MCH18 SXA-389 AN058
Contextual Info: Application Note - AN058 Using SXA-389B with Original SXA-389 Application Circuit Abstract This application note is for customers using the SXA-389 and considering switching to the SXA389B. The typical RF performance of the SXA389B inserted in the original SXA-389 application

Contextual Info: ASX501 250 ~ 2500 MHz MMIC Amplifier Features Description  18dB Gain at 900 MHz The ASX501, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication

matching circuit of atf 52189

Abstract: BLM21PG600SN1D 53189 ATF-52189 ATF-521P8 ATF-53189 RO4350 depletion mode PHEMT .s2p
Contextual Info: 2.0 GHz high-linearity second stage LNA/ driver using the ATF-52189 Application Note 5245 Introduction EPHEMT Biasing Avago Technologies’ ATF-52189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high

ADL5230-EVALZ

Abstract: ADL5320 ADL5320ARKZ-R7 c5 47 sot89
Contextual Info: Preliminary Technical Data FEATURES 400 MHz to 2700 MHz Pre-driver RF Amplifier ADL5320 FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 2700 MHz Gain of +13.7 dB Gain at 2140 MHz OIP3 of+42.0 dBm at 2140 MHz P1dB +25.6 dBm at 2140 MHz Noise Figure of 4.2 dB at 2140 MHz

zener diode c5

Abstract: Zener C422 zener diode c6 C2 6 zener diode 5-6V Zener Diode Zener Diode C3 5
Contextual Info: ASX401 100 ~ 3000 MHz MMIC Amplifier Features Description  19.5 dB Gain at 900 MHz  29.5 dBm P1dB at 900 MHz  47 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Single Supply The ASX401, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

267M3502104K

Abstract: 2425-C
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

RF AMP marking c7 sot-89

Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with

Contextual Info: ASX601 250 ~ 2500 MHz MMIC Amplifier Features Description  16 dB Gain at 900 MHz  32.7 dBm P1dB at 900 MHz  49 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Single Supply The ASX601, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

Xa3 TRANSISTOR

Abstract: matsuo
Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

r0603

Abstract: S0603 RJ11x2 RV1 1M DM9601 DM9801E
Contextual Info: 8 7 Q1 G910/SOT89 VIN +3.3V + C2 47UF/25V/E.C. 2 L1 1 D MDC MDIO +3.3V X X X EECS PW_RST# X X X X X X X X 4.7K x 4 + C3 1UF/25V/E.C. RESET 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 DGND X RX_CLK RX_DV COL CRS RXD3 RXD2 RXD1

CL10B104KONC

Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
Contextual Info: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the

Contextual Info: 400 MHz to 2700 MHz ¼ Watt RF Driver Amplifier ADL5320 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation: 400 MHz to 2700 MHz Gain of 16.9 dB at 880 MHz OIP3 of 45.0 dBm at 880 MHz P1dB of 25.4 dBm at 880 MHz Noise figure: 4.1 dB at 880 MHz Power supply voltage: 3.3 V to 5 V

Contextual Info: HMC453ST89 / 453ST89E v01.0205 AMPLIFIERS - SMT 8 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.2 - 2.4 GHz Typical Applications Features The HMC453ST89 / HMC453ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm • GSM, GPRS & EDGE

schematic diagram power amplifier free download

Abstract: circuit diagram of alpha 400 power supply Rogers 4350 datasheet HMC453ST89 HMC453ST89E 51 ohm resistor SOT89 marking
Contextual Info: HMC453ST89 / 453ST89E v01.0205 LINEAR & POWER AMPLIFIERS - SMT 6 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC453ST89 / HMC453ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm

Rogers 4350 datasheet

Abstract: HMC453ST89 HMC453ST89E
Contextual Info: HMC453ST89 / 453ST89E v01.0205 AMPLIFIERS - SMT 8 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC453ST89 / HMC453ST89E is ideal for applications requiring a high dynamic range amplifier: Output IP3: +49 dBm • GSM, GPRS & EDGE

Xa3 TRANSISTOR

Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
Contextual Info: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Xa3 TRANSISTOR

Abstract: MCH18 SXA-389 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z
Contextual Info: SXA-389 SXA-389Z Product Description Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology

0603CS

Abstract: ADL5320 ADL5320ARKZ-R7 AN-772 GRM155 HBT transistor GaAs gsm block diagram
Contextual Info: 400 MHz to 2700 MHz RF Driver Amplifier ADL5320 Operation: 400 MHz to 2700 MHz Gain of 17 dB at 880 MHz OIP3 of 45 dBm at 880 MHz P1dB of 25.4 dBm at 880 MHz Noise figure: 4 dB at 880 MHz Power supply: 5 V Power supply current: 104 mA typical Internal active biasing

ATF-53189

Abstract: SMA CONN ATF - 53189 AMPLIFIER ATF-521P8 ATF53189 RO4350 53189
Contextual Info: 2.0 GHz high-linearity second stage LNA/driver using Avago Technologies ATF-53189 Application Note 5244 Introduction Circuit Description Avago Technologies’ ATF-53189 is a high linearity, medium power, low noise E-pHEMT FET in a low cost surface mount SOT89 package. It is suitable for high

Contextual Info: ASL19W 5-3000 MHz High Linearity LNA MMIC Features Description •20 dB Gain at 900 MHz The ASL19W, a wideband linear low noise amplifier ·22 dBm P1dB at 900 MHz MMIC, has a low noise and high linearity at low bias current, being suitable for use in both receiver and

XA3Z

Contextual Info: SXA-389 Z SXA-389(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic

Contextual Info: ASW318 5 ~ 4000 MHz MMIC Amplifier Features Description  16.5 dB Gain at 900 MHz The ASW318, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems