C4805 Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

MB15G000

Abstract: SSOP-16 SSOP-20 BCC-16 FPT-16P-M05 LQFP-48 LQFP-64
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

29LV400TC

Contextual Info: FLASH MEMORY CMOS 4M 512K x 8/256K x 16 BIT MBM29LV400TC-70-90-12/MBM29LV400BC-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

C0000-H

Abstract: 29LV160 29lv160 Flash
Contextual Info: FLASH MEMORY 16M 2M x 8/1M x 16 BIT CMOS MBM29LV160T-80-90-12/MBM29LV16 OB-8O/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-8E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-55/70/90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

MBM29LV160TE70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA

CPH3106

Abstract: CPH3206 CPH3303 LQFP-48P MB3883 NDS355AN VT100
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27225-2E ASSP For Power Management Applications 6-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3883 • DESCRIPTION The MB3883 is a 6-channel step-up/step-down DC/DC converter IC using pulse width modulation PWM and

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27225-4E ASSP For Power Management Applications 6-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3883 • DESCRIPTION The MB3883 is a 6-channel step-up/step-down DC/DC converter IC using pulse width modulation PWM and

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27225-4Ea ASSP For Power Management Applications 6-ch DC/DC Converter IC with Synchronous Rectifier for Voltage Step-up and Step-down MB3883 • DESCRIPTION The MB3883 is a 6-channel step-up/step-down DC/DC converter IC using pulse width modulation PWM and

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

Attansic L1

Abstract: IT8511TE ALC660 bd3702 c5914 c5803 cd3102 asus attansic f1 C4422
Contextual Info: 5 Block Diagram 61 02 System Setting 62 C * 63 * 04_CPU-Merom HOST 64 ISA ROM 05 05_CPU-Merom(PWR) 65 SPI ROM * 66 07_CRESTLINE(HOST) 67 * 08 08_CRESTLINE(DMI & CFG) 68 DC & BAT IN 09 09_CRESTLINE(GRAPHIC) 69 * 10 10_CRESTLINE(DDR2) 70 Debug CONN. 11 11_CRESTLINE(PWR)

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

LQFP-48P

Abstract: k4143 CPH3106 CPH3206 CPH3303 MB3883 NDS355AN VT100 IN5829
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27225-4Z 运用于电源管理的 ASSP （专用集成电路） 6- 通道 DC/DC 转换器 IC，带有用于升压和降压 的同步整流器 MB3883 • 说明 MB3883 是一个使用脉宽调制（PWM）和同步整流实现六通道升压 / 降压的 DC/DC 转换集成电路，用于低电压

Contextual Info: MCOTS-C-48-05-HP Single Output Half-brick MILITARY COTS DC-DC CONVERTER 34-75V Continuous Input 34-100V Transient Input 5V Output 46A Output 92% @ 23A / 89% @ 46A Efficiency Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC-DC converters brings

TSOP 48 Package

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-6E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-55/70/90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands