C464A Search Results

C460A

Abstract: C424A C410A C428A C411A C414A C49A
Contextual Info: C4SMAFL8.5A THRU C4SMAFL170A SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 400 WATTS, 8.5 THRU 170 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C4SMAFL8.5A series devices are a low profile alternative to standard

P21 Package

Contextual Info: CY7C460A/CY7C462A C464A/CY7C466A •= C Y P R E S S Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs Features Functional Description High-speed, low-power, first-in first-out FIFO memories 8K x 9 FIFO (CY7C460A) 16K x 9 FIFO (CY7C462A) 32K x 9 FIFO (C464A)

C416A

Abstract: C451A C443A C436A
Contextual Info: C4SMAFL8.5A THRU C4SMAFL170A SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 400 WATTS, 8.5 THRU 170 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C4SMAFL8.5A series devices are a low profile alternative to standard

7C466A-10

Abstract: C464A CY7C462A-10JC
Contextual Info: CYPRESS PRELIMINARY CY7 C460A/C Y7 C462A C464A/CY7C466A Asynchronous, Cascadable 8K /16K /32K /64K x9 FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 8K x 9 FIFO (CY7C460A) • 16K x 9 FIFO (CY7C462A)

51c464

Abstract: MSM51C464A MSM51C464A-10 ZIP20-P-400
Contextual Info: O K I Semiconductor C464A G5,536-Word x 4 'B it D Y N A M IC RA M DESCRIPTION The C464A is a new generation dynamic R A M organized as 65,536-woid x. 4-bit The technology used to fabricate C464A is O K I's C M O S silicon gate process technology. The

C410A

Abstract: C443A C424A C412A C422A C448A C436A C428A c426a c451a
Contextual Info: C4SMAFL8.5A THRU C4SMAFL170A SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 400 WATTS, 8.5 THRU 170 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C4SMAFL8.5A series is a glass passivated junction TVS packaged

mc4858

Abstract: MC458A MC4828 MC456A MC457A MC486B kovar
Contextual Info: lîïlHTM M C456A - MC486B Microsemi Corp. FEATURES • M icrom iniature package. Standard recovery. Herm etically sealed glass package. Stable surface films integrally bonded to the device crystal. M eets or exceeds requirem ents of M IIL-S-19500 and M IL -S T D -7 50.

M51C464A

Abstract: 51C464A-10 MSM51C464A70RS 51c464 MSM51C464A-70RS
Contextual Info: O K I semiconductor C464A 65,536-W ord x 4-B it DYN A M IC RAM GENERAL DESCRIPTION T he M S M 51C 464A is a new generation dynam ic RAM organized as 65.536-w ord x 4-bit. The technology used to fabricate the M S M 51C 464A is O K I’s C M O S silicon gate process tech nol­

Contextual Info: fax id: 5420 CY7C460A,CY7C462A C464A,CY7C466A PRELIMINARY c y p ir s s Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs Functional Description Features • High-speed, low-power, first-in first-out FIFO memories • 8K x 9 FIFO (CY7C460A) • 16K x 9 FIFO (CY7C462A)