C463 Y Search Results

R1019

Abstract: R472 RJ19 C1186 C1162 c877 R947 C1239 c1165 R1007
Contextual Info: R431 Q47 R771 T P3 2 R772 D32 D40 D79 Q22 C313 C310 R372 D25 C724 F7 U38 U27 U11 C199 C407 R328 R273 C203 Q61 Q107 R657 Q83 Q68 R652 L5 C189 C108 C104 C463 C944 C910 C342 C908 C103 C100 C455 C466 U4 C87 C31 C591 C699 R82 U15 C109 RT13 Q4 C617 C22 C411 C9 Q59

IOR 450 M

Abstract: c468 c467 c463 TRANSISTORS 640 JS
Contextual Info: International S Rectifier P D - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10 js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to

IRGPH20M

Abstract: C463 Y
Contextual Info: PD - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

IRGPH20M

Abstract: C463 Y c468
Contextual Info: PD - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

IRFPO44

Abstract: IRFP045 IRFP044 diode sy 171 C466 irfpu44 C463 T-39 LG 57A RNC 90
Contextual Info: HE D I 4ÛSS4S2 aGdâ71E Data Sheet No. PD-9.583A 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER X R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFPÜ44 IRFPQ45 HEXFET TRANSISTORS N-CHANNEL 60 Volt, 0.028 Ohm HEXFET TO-247AC TO-3P Plastic Package

IRGPH20M

Abstract: C463 C463 Y
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

C735

Abstract: C749 NPN C460 C644 BS9300 c495 C-725 CV7580 c496 c727
Contextual Info: 7 BS9000 Converted CV Case Outlines Small Signal Transistors . B S Type Number Com m ercial Equivalent Case Outline Polarity Ab solute Maximum Rating VCB V VCE V h F E at Co llecto r Current VEB V hFE min. hFE max. 1C mA M in. fT MHz Com m ents 0-76 0 -4 8 0

Contextual Info: m y D INTEGRATED CIRCUITS FROM MOTOROLA IS S U E A FUNCTIONS AND CHARACTERISTICS V CC = 5 .0 V , T a = 2 5 °C Type Function Case 609, 605, 632 0 to +75°C Case 6 09,632 -55 to +125°C Output Loading Factor Each Output MC500 MC400 Series Series Propagation

NPN C460

Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
Contextual Info: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25

C495 transistor

Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra

C495 transistor

Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75

c1093

Abstract: R472 R1219 u114 C1061 C1059 c1165 C1238 C1086 c1127
Contextual Info: J5 J24 C72 C1117 J31 R337 C501 J17 R739 R688 C814 C405 R685 R543 R517 R511 R513 C103 R509 R449 C444 C272 C597 R1127 L11 C234 F6 C1026 C1025 C214 L3 R527 R526 R525 Q23 J11 C511 D28 D44 C569 C232 C145 R529 Q17 D32 C514 C366 R392 C216 C314 C512 C483 Q16 C166

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

C1093

Abstract: R474 TP8107 C9106 C9104 C9130 C1307 C9045 TP8111 R734
Contextual Info: A01 A02 A03 A05 A04 R187 C9 R718 Q59 R56 C522 J12 R549 C591 R406 R861 R33 C452 C9131 C9127 C9129 R4 C49 D38 C1181 C1182 R1053 R241 R973 C1191 R976 C1119 C1156 R30 C227 C406 J100 A18 R368 R1604 R384 R381 R407 C279 R399 R330 R364 C405 R992 C402 U41 R1603 R1609

Contextual Info: µçxÓ¹¤³Ìʦ @BBBÄêµÚ IÆÚ ¼ÆËã»úÓ¦Óà һÖÖµ¥Æ¬»ú¿ØÖÆϵͳ¼üÅÌ !ÏÔʾµç•µÄÉè¼ÆÓëʵÏÖ "#$%$&’ * + ,-. $,$)/ 0/ ’ 1)123$451067!%’ &-. 048. $9/ 6’ 90.:’ 69;’ /1)/ #$ <1)1. ’ / #’

R472

Abstract: d83 c502 r462 C-854 r834 r649 R767 u34 c634 C949 R474
Contextual Info: F12 C563 C565 RT9 R639 C207 R273 C203 C407 R271 R328 C199 Q13 R855 R854 D70 D47 Q41 R129 C223 R234 C96 D43 R447 R42 C773 C771 C849 R860 R857 R616 C550 R548 C235 R302 R388 C566 F13 R410 Q9 D19 C700 RT16 R455 Q104 Q7 R841 R844 R845 R763 D23 Q56 C732 C797 C672

C495 transistor

Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

MMA0204-50

Abstract: Zener C444 MMA-0204-50 C343 "zener diode" zener c346 C406 Zener BUF C221 diode c446 c343 diode motorola D402 user guide
Contextual Info: Application Report SLEA032 - MARCH 2004 TAS5066-5121K6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5121K6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5121DKD from Texas Instruments TI .

GRM40X7R103K050AL

Abstract: C458 equivalent c423 diode D30122 CY7C09449 CY09 7-segment LED display 1 to 99 vhdl CY7C9689 CY37512P208-125NC CRCW0805 100K JK
Contextual Info: CY7C924DX/CY7C9689 HOTLink Evaluation Board User’s Guide Overview the CPLD will transfer the block of data from the PCI-DP into the transmit external FIFO. The HOTLink Transceiver will then automatically read from the external FIFO to its internal FIFO

c225 capacitor smd

Abstract: D313 amplifier 500 watt audio subwoofer subwoofer 300 watts amplifier C507 Zener C919 diode BUF c907 Zener C444 power supply with regulator D313 high subwoofer 100 watts amplifier
Contextual Info: Application Report SLEA031 - MARCH 2004 TAS5066-5112F6EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5066-5112F6EVM PurePath Digital customer evaluation module demonstrates two integrated circuits TAS5066 and TAS5112ADFD from Texas Instruments TI .

MC526

Abstract: MC529 MC506 MC556 MC426 MC573 MC429 mc564 MC576 mc511
Contextual Info: jffl'D’T F t D m INTEGRATED CIRCUITS FROM MOTOROLA o . o ISSUE A FUNCTIONS AND CHARACTERISTICS V c c = 5 0 V ’ T A = 25°C O u tp u t Type ( f) Case Case F u n c tio n 609, 605, 632 609, 632 0 to + 7 5 °C -5 5 to + 1 2 5 °C Power L o a d in g F a c to r

SCD1U50V3KX-GP

Abstract: SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP
Contextual Info: 5 4 3 2 1 D D SW 1 10 1 EJECT_BTN 3 5 2 4 SW -TACT-119-GP 62.40009.671 62.40012.101 C C B B A A mini BD Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title ODD EJT BTN Size Document Number Rev -2 JM41_MINI_BD