C4 RF AMPLIFIER Search Results

NCS2500

Abstract: NCS2502 video amplifier SOT23-6 8678 sot23-5 AD8057 AD8038 AD8055 TSH341 NJM2711 22MF 470MF NCS2501 NCS2510 NCS2511
Contextual Info: Vs+ Vs+ Rm | Rg = 757 C2 10n U1 IN Rf1 R1 Rm R2 Rg2 R1 75 C4 10n VsZ = 1007 CAT-5 R2 Rg2 OUT 757 COAXIAL CABLE DRIVER C3 10n U2 Rf2 R3 75 Rg VsVs+ OUT 75 Rf 50 C2 10n R3 Rg1 R2 U2 IN R4 C3 10n Vs+ R5 50 C4 10n VsDIFFERENTIAL LINE DRIVER C1 0.2Mn C3 10n

smd transistor bcv62

Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B
Contextual Info: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A

1N5859

Abstract: LED sot23-6 sot23-6 layout RO SOT23-5 LMH730316
Contextual Info: National Semiconductor Application Note 2095 Hooman Hashemi November 1, 2010 General Description Several components are mounted on the board bottom, while the DUT is installed on the top layer, for best performance. Here is a list of these components: Rf, RGa, C4, and RGND.

CLC400

Abstract: CLC401 CLC402 CLC404 CLC405 CLC406 CLC407 CLC730013 CLC730027 CLC730077
Contextual Info: N 8-Pin Op Amp Evaluation Boards Part Numbers CLC730013, CLC730027, CLC730077 February 1999 +VCC The CLC730013, CLC730027, and CLC730077 evaluation boards are designed to aid in the characterization of National Semiconductor’s 8-pin, monolithic amplifiers.

Rogers RO4350B

Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Contextual Info: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

transistor z3

Abstract: TRANSISTOR Z4
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max

Contextual Info: RF2312 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2312 is a general purpose, low cost high linearity

transistor C4

Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max

GJM1555C1H180GB01

Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Contextual Info: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA25312BT1 High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and

433MHZ amplifier schematic

Abstract: RF MANUAL AN11436
Contextual Info: UM10772 User Manual BFU5xx series starter kits Rev. 1 — 21 January 2014 User manual Document information Info Content Keywords BFU520, BFU530, BFU550, BFU520A, BFU530A, BFU550A, BFU520W BFU530W, BFU550W, BFU520X, BFU530X, BFU550X, BFU520XR, BFU530XR, BFU550XR, amplifier, LNA, Wide Band Amplifier, PCB

Zener C212

Abstract: diode zener c71 zener ma 1150
Contextual Info: ASX621 250 ~ 3000 MHz MMIC Amplifier Description Features  18 dB Gain at 2000 MHz  32.5 dBm P1dB at 2000 MHz  49 dBm Output IP3 at 2000 MHz  MTTF > 100 Years  Two Power Supplies The ASX621, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

MG271H

Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

AVX 6295

Abstract: 239 avx ML200C A113 A114 A115 AN1955 MMG3003NT1 A 118827 0805K680JBT
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally

Contextual Info: RFH RF2310 MICRO DEVICES WIDEBAND GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s • General Purpose High Bandwidth Gain • Broadband Test Equipment • Final PA for Medium Power Applications Blocks • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers

Contextual Info: Document Number: MMG20271H Rev. 0, 12/2010 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271HT1 High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,

Amplifier SOT-89 c4

Abstract: ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 5, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 2, 5/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

Contextual Info: Document Number: MMG15241H Rev. 1, 4/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,

zener diode c5

Abstract: Zener C422 zener diode c6 C2 6 zener diode 5-6V Zener Diode Zener Diode C3 5
Contextual Info: ASX401 100 ~ 3000 MHz MMIC Amplifier Features Description  19.5 dB Gain at 900 MHz  29.5 dBm P1dB at 900 MHz  47 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Single Supply The ASX401, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

135-869

Abstract: ML200C transistor a114 diagram
Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

diode UF 2010

Contextual Info: ASX101 5 ~ 4000 MHz MMIC Amplifier Features Description  22 dB Gain at 900 MHz The ASX101, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 4 GHz. The amplifier is available in a

IPC 6012

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 3, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

154754

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 4, 5/2006 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad