C4 RF AMPLIFIER Search Results

100 pf, ATC Chip Capacitor

Abstract: motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer
Contextual Info: MOTOROLA Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 PHOTOMASTER CASE 305C–02, STYLE 1 SOE200–PILL R4 R5 R6 + VCC R7 – Q1 R2 R8 R3 C9 C4 C3 C10 TL11 TL10 C5 TL5 RF INPUT C8 TL6

NCS2500

Abstract: NCS2502 video amplifier SOT23-6 8678 sot23-5 AD8057 AD8038 AD8055 TSH341 NJM2711 22MF 470MF NCS2501 NCS2510 NCS2511
Contextual Info: Vs+ Vs+ Rm | Rg = 757 C2 10n U1 IN Rf1 R1 Rm R2 Rg2 R1 75 C4 10n VsZ = 1007 CAT-5 R2 Rg2 OUT 757 COAXIAL CABLE DRIVER C3 10n U2 Rf2 R3 75 Rg VsVs+ OUT 75 Rf 50 C2 10n R3 Rg1 R2 U2 IN R4 C3 10n Vs+ R5 50 C4 10n VsDIFFERENTIAL LINE DRIVER C1 0.2Mn C3 10n

smd transistor bcv62

Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B
Contextual Info: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A

datasheet micro sd

Abstract: LMV712 MSOP10 SMD10 smd diode code sd smd diode S
Contextual Info: National News LMV712 December 2001 www.national.com/pf/LM/LMV712.html LMV712, Dual Operational Amplifier Typical Application Circuit U1 GSM Antenna GSM PA C1 RF Signal U2 C2 In Out Input Output Directional Coupler VPC Coupled C3 C4 R2 R1 V+ SD R5 BIAS Schottky Diode

1N5859

Abstract: LED sot23-6 sot23-6 layout RO SOT23-5 LMH730316
Contextual Info: National Semiconductor Application Note 2095 Hooman Hashemi November 1, 2010 General Description Several components are mounted on the board bottom, while the DUT is installed on the top layer, for best performance. Here is a list of these components: Rf, RGa, C4, and RGND.

CLC400

Abstract: CLC401 CLC402 CLC404 CLC405 CLC406 CLC407 CLC411 CLC730013 CLC730027
Contextual Info: N 8-Pin Op Amp Evaluation Boards Part Numbers CLC730013, CLC730027 August 1996 +VCC The CLC730013 and CLC730027 evaluation boards are designed to aid in the characterization of Comlinear’s 8-pin, monolithic amplifiers. • ■ CLC730013 - DIP packages Uses all through-hole components

CLC404

Abstract: 8 pin OP deutsch coax socket CLC400 CLC401 CLC402 CLC405 CLC406 CLC407 CLC730013
Contextual Info: N 8-Pin Op Amp Evaluation Boards Part Numbers CLC730013, CLC730027, CLC730077 January 2000 +VCC The CLC730013, CLC730027, and CLC730077 evaluation boards are designed to aid in the characterization of National Semiconductor’s 8-pin, monolithic amplifiers.

CLC400

Abstract: CLC401 CLC402 CLC404 CLC405 CLC406 CLC407 CLC730013 CLC730027 CLC730077
Contextual Info: N 8-Pin Op Amp Evaluation Boards Part Numbers CLC730013, CLC730027, CLC730077 February 1999 +VCC The CLC730013, CLC730027, and CLC730077 evaluation boards are designed to aid in the characterization of National Semiconductor’s 8-pin, monolithic amplifiers.

Amplifier c4

Abstract: MONOLITHIC AMPLIFIERS CLC400 CLC401 CLC402 CLC404 CLC405 CLC406 CLC407 CLC730013
Contextual Info: N 8-Pin Op Amp Evaluation Boards Part Numbers CLC730013, CLC730027, CLC730077 December 2000 +VCC The CLC730013, CLC730027, and CLC730077 evaluation boards are designed to aid in the characterization of National Semiconductor’s 8-pin, monolithic amplifiers.

CLC400

Abstract: CLC401 CLC402 CLC404 CLC405 CLC406 CLC407 CLC730013 CLC730027 CLC730077
Contextual Info: N 8-Pin Op Amp Evaluation Boards Part Numbers CLC730013, CLC730027, CLC730077 August 1997 +VCC The CLC730013, CLC730027, and CLC730077 evaluation boards are designed to aid in the characterization of National Semiconductor’s 8-pin, monolithic amplifiers.

GRM188R71H104KA93D

Abstract: M31382 is680
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20241H Rev. 1, 7/2014 Driver or Pre-driver Amplifier for Doherty Power Amplifiers MMG20241HT1 GaAs Enhancement Mode pHEMT The MMG20241H is a 1/4 W high gain amplifier designed as a driver or pre-driver for Doherty power amplifiers in wireless infrastructure equipment

Rogers RO4350B

Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Contextual Info: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

transistor z3

Abstract: TRANSISTOR Z4
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max

Contextual Info: RF2312 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2312 is a general purpose, low cost high linearity

TRANSISTOR Z4

Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 rt230pd IRF 1470
Contextual Info: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max

SMAJ26

Abstract: P13PC
Contextual Info: RF2310
     
      • General Purpose High Bandwidth Gain • Broadband Test Equipment • Final PA for Medium Power Applications Blocks • Driver Stage for Power Amplifiers • IF or RF Buffer Amplifiers


Contextual Info: Document Number: MML09212H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

RO4350B

Abstract: Rogers RO4350B microstrip RC0402FR-07-910RL YAGEO CHIP Capacitors MARKING GRM1555C1H221JZ01 ERJ2GE0R00X marking us capacitor pf l1 GRM1555C1H560JZ01 RC0402JR yageo GRM1555C1H181JZ01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MML09212H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

GJM1555C1H180GB01

Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Contextual Info: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

GRM1555C1H101JA01

Abstract: LL1608-FH22N0S GRM155R61A105KE15 RC0402JR-07100RL RC0402JR-071K60L FR408
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA25312BT1 High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and

MIXER SCHEMATIC DIAGRAM

Abstract: c4 ic rf amplifier
Contextual Info: HPMX-2006 Demonstration Circuit Board rev AP060596A Applications Bulletin Introduction The circuit board described is designed for use with HPMX-2006 up converter / amplifier MMIC. The board can be set up to test the mixer alone or to test the mixer/amp combination. It allows testing the

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA25312BT1 High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and

433MHZ amplifier schematic

Abstract: RF MANUAL AN11436
Contextual Info: UM10772 User Manual BFU5xx series starter kits Rev. 1 — 21 January 2014 User manual Document information Info Content Keywords BFU520, BFU530, BFU550, BFU520A, BFU530A, BFU550A, BFU520W BFU530W, BFU550W, BFU520X, BFU530X, BFU550X, BFU520XR, BFU530XR, BFU550XR, amplifier, LNA, Wide Band Amplifier, PCB

Contextual Info: MOTOROLA Order this document by MMG3003NT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally