C4 IC RF AMPLIFIER Search Results

MIXER SCHEMATIC DIAGRAM

Abstract: c4 ic rf amplifier
Contextual Info: HPMX-2006 Demonstration Circuit Board rev AP060596A Applications Bulletin Introduction The circuit board described is designed for use with HPMX-2006 up converter / amplifier MMIC. The board can be set up to test the mixer alone or to test the mixer/amp combination. It allows testing the

11Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

variable resistor 2.2k

Abstract: fr3c2 transistor preamp with bass treble circuit diagram 40hz bass filter CIRCUIT diagram 2SA1362 TA2123AF DRV_B curent sensor
Contextual Info: TA2123AF TOSHIBA Bipolar Integrated Circuit Silicon Monolithic TA2123AF 1.5V Stereo Headphone Amplifier The TA2123AF is the system amplifier IC which is developed for playback stereo headphone equipments. It is built in dual auto−reverse preamplifiers, dual power amplifiers with bass /

PWC PW-2

Abstract: 2SA1362 TA2123AFG transistor preamp with bass treble circuit diagram
Contextual Info: TA2123AFG TOSHIBA Bipolar Integrated Circuit Silicon Monolithic TA2123AFG 1.5V Stereo Headphone Amplifier The TA2123AFG is the system amplifier IC which is developed for playback stereo headphone equipments. It is built in dual auto−reverse preamplifiers, dual power amplifiers with bass /

Contextual Info: ADE-207-112 Z HA11575F Satellite Broadcast Tuner FM Demodulator IC Rev. 0 Feb. 1994 Functions • IF amplifier (with built-in IF AGC) • PLL FM detection • AGC detection • First AGC output • AFC (supports keyed AFC) • Digital AFC output • Video amplifier

Contextual Info: RFH RF2310 MICRO DEVICES WIDEBAND GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s • General Purpose High Bandwidth Gain • Broadband Test Equipment • Final PA for Medium Power Applications Blocks • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers

358E-06

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz.

TRANSISTOR A331

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

TRANSISTOR A331

Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

capacitor 104 Z5

Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

37281

Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

TRANSISTOR A331

Abstract: 395C-01
Contextual Info: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

S1M8674

Abstract: amplifier SAW c4 ic rf amplifier DRV19
Contextual Info: TX RF FRONTS-ENDS IC S1M8674 INTRODUCTION 20-eTSSOP-BD44 S1M8674 is a fully integrated RF transmit IC for CDMA handsets. It includes an upconverter, a two-stage driver amplifier, and an LO buffer in 20TSSOP/24QFN with exposed paddle package. The driver amplifier

Contextual Info: SGB-6533 Z SGB-6533(Z) DC to 3GHz Active Bias Gain Block DC to 3GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides

t918

Abstract: 10000 uf ovam 40
Contextual Info: E èÎËQGÇS AWT918 TX POWER MMIC Your GaAs IC Source Advanced Product Information Rev 0 CELLULAR/PCS Dual Band GaAs Power Amplifier IC D ES C R IP TIO N : T he A W T918 is a m onolithic GaAs Pow er Am plifier. It can be used in the follow ing dual band handset

transistor c5

Abstract: transistor c3-12 2N3866 c4 ic rf amplifier high frequency transistor
Contextual Info: DATA SHEET 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3866 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

Contextual Info: SGB-4333 Z SGB-4333(Z) DC to 3GHz Active Bias Gain Block DC to 3GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides

Contextual Info: SGB-2233 Z DC to 4.5GHz Active Bias Gain Block SGB-2233(Z) Preliminary DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides

SGB-2233Z

Abstract: SGB-2233
Contextual Info: SGB-2233 Z DC to 4.5GHz Active Bias Gain Block SGB-2233(Z) Preliminary DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides

Contextual Info: SGB-2433 Z DC to 4GHz Active Bias Gain Block SGB-2433(Z) Preliminary DC to 4GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides

Contextual Info: SGB2433Z SGB2433Z DC to 4GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Z Part Number Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB2433Zis a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides

SGB-2433

Abstract: SGB-24Z
Contextual Info: SGB-2433 Z DC to 4GHz Active Bias Gain Block SGB-2433(Z) Preliminary DC to 4GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides

Contextual Info: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta