C3J MARKING Search Results

marking code C3J

Abstract: C3j marking c30 C3J code C3J marking c3j CMLDM7003 CMLDM7003J sot transistor pinout
Contextual Info: CMLDM7003 CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE • ESD protected up to 2kV MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current

C3j marking

Abstract: CMLDM7003 CMLDM7003J code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J
Contextual Info: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel

Contextual Info: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel

Contextual Info: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current

CMLDM7003

Abstract: CMLDM7003J c30 C3J c30 diode marking c3j C3j marking code C3J marking code C3J CMLDM7003G
Contextual Info: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current

Contextual Info: CMLDM7003 CMLDM7003G* CMLDM7003J w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage

CMLDM7003

Abstract: C3j marking CMLDM7003J code c3j marking c3j c30 C3J marking code C3J CMLDM7003G
Contextual Info: CMLDM7003 CMLDM7003G* CMLDM7003J SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current

PC3223TB

Abstract: marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

C3j marking

Abstract: UPC3223TB marking c3j HS350 PC2710TB marking c1d PU10491EJ01V0DS UPC3223TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

Transistor Marking C3

Abstract: PC2710TB UPC3223TB PC3223TB marking c3j HS350 PC2708TB marking c1d PC3223TB-E3 PC3223TB-E3-A
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

MARKING BS

Abstract: C3j marking TIC 1.0M marking c3j TA4100F
Contextual Info: TO SHIBA TA4100F Bipolar Linear Integrated Circuit Unit in mm UHF VHF RF, Mix Application u - a î Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC ♦ 0.2 1.5 - 0.1 SYM BOL RATING UNIT C ollector-Base Voltage ^CBO 10 V C ollector-E m itter Voltage VcEO

uPC3223TB

Abstract: HS350 PC2710TB C3j marking marking c3j marking c1d PU10491EJ01V0DS
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

code c3j

Abstract: C3j marking marking code C3J marking c3j
Contextual Info: For technical assistance call the Strategic Products number on the back cover. Featu res A p p lica tio n s • Recommended fo r reflow processing ■ Rotor design compatible with pick and place and automatic adjustment equipment ■ Supplied in 8mm embossed tape, compat­

Contextual Info: c ta n k e 0 1 :57:13 2 0 1 2 / 07/21 APPLICA 3LE STANDARD O PER ATING STO RAG E -55 TEM PER ATU R E RANGE °C TO +85 °C O PER ATIN G RATING VOLTAGE 300 V AC 2A °C TO +60 °C H U M IDITY 85% MAX RANGE S TO RAG E CURRENT -10 TE M PE R ATU R E RANGE H U M IDITY

C3j marking

Abstract: DTC123J marking c3j
Contextual Info: UTC DTC123J NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR BUILT-IN RESISTORS FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with

marking SAIo

Abstract: in snec 0IKE 08x4 RK09K RK09K1110 code C3J marking code C3J marking c3j
Contextual Info: No. KX-97-T793 Cus t ome r• Date: Feb. 19. 1997 Att.t»nt. i on : Your ref. No : Your Part. No :29 SPEC IFI CATIONS ALPS'; 29 0007 MODEL Snec. No. Sample RECEIPT : No. : W1 01 1 758M STATUS RECEIVED By. Date Si Enature Name Title ALPS.ELECTRIC CO., LTD.

DF40

Abstract: 60DS-0
Contextual Info: c a r o l. tr ib b le 0 2 :30:40 2009/ 10/23 A P P L IC A 3LE S T A N D A R D OPERATING TEMPERATURE RANGE RATING STORAGE TEMPERATURE RANGE APPLICABLE CONNECTOR -35°C TO 85°C NOTE 1 VOLTAGE 30V AC CURRENT 0. 3A notice to change without is subject FOR REFERENCE:This

2SA592

Abstract: 2SC41 2SA1592 2SC4134
Contextual Info: SANYO SEMICONDUCTOR CORP 2SE D • 2SA1592, 2SC4134 7 e5ci ? a 7 b 0Q070b4 T ■ T-3 3 -n T -3 3 -0 1 PN P /N PN Epitaxial Planar Silicon Transistors 2044 High-Voltage Switching Applications 2510A Applications . Power supplies, relay drivers, lamp drivers

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

marking code C1F mmic

Abstract: marking code C1d mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3225TB is a silicon germanium SiGe monolithic integrated circuits designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

code C3J

Abstract: marking code C3J marking c3j marking code 8hs
Contextual Info: LH53B8600D 8M Mask ROM Model No.: LHMB86xx Spec No.: EL099183 Issue Date: November 6, 1997 LH53B8600D •Handle this docuaent carefully for it contains Material protected by international copyright la». Any reproduction, full or in part, of this material is prohibited

PC3225

Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

RO4003C

Abstract: S11F PC2710TB C3J marking UPC3223TB marking c3j marking c3s
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

transistor marking c3n

Abstract: PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.