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c387n Abstract: mtp3403 Contextual Info: Spec. No. : C387N3 Issued Date : 2007.06.13 Revised Date : Page No. : 1/6 CYStech Electronics Corp. P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features • VDS=-30V RDS ON =85mΩ@VGS=-4.5V, IDS=-2A RDS(ON)=120mΩ@VGS=-2.5V, IDS=-1A • Advanced trench process technology	Original	c387n3 mtp3403an3 ot-23 ul94v-0 +2c387n mtp3403	PDF

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c387n

Abstract: mtp3403
Contextual Info: Spec. No. : C387N3 Issued Date : 2007.06.13 Revised Date : Page No. : 1/6 CYStech Electronics Corp. P-CHANNEL Enhancement Mode MOSFET MTP3403AN3 Features • VDS=-30V RDS ON =85mΩ@VGS=-4.5V, IDS=-2A RDS(ON)=120mΩ@VGS=-2.5V, IDS=-1A • Advanced trench process technology

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c387n3 mtp3403an3 ot-23 ul94v-0 +2

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