C309 Search Results

C30919E

Abstract: avalanche photodiode bias photodiode amplifier rise time avalanche photodiode
Contextual Info: JJ^EG sG CANADA LTD. Optoelectronics Division Formerly ItGJl Effective January 1,1991 tro :ics Photodiode C30919E DATA SHEET U Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

quadrant photodiode rca

Contextual Info: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .

Contextual Info: G & G/CANADA/OPTOELEK WM • IQ 3D3DL1D 0G000M4 1TÔ io l «CANA Solid State Detectors ~ MW Electro Optics and Devices Developmental Types C30950 Seríes Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic

C30817

Abstract: C30954E ISO-9001-87 C30872 C30916E c30954 C30956E C30956 c30955e avalanche photodiodes
Contextual Info: J L ,E G slG CANADA LTD. Optoelectronics Divisio Formerly i t C A Effective January 1,1991 ISO-9001-87 Cert *001975 Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications

C30916E

Contextual Info: JL e G slG CANADA LTD. Optoelectronics Division Formerly D h A ^ H in ^ « ' P h O tO d lO d e R C il D evelopm ental Type Effective January 1, 1991 C30916E Large Area Silicon Avalanche Photodiode for General-Purpose Applications 85% typical at 900 nm •

BTNA44A3

Abstract: BTPA94A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C309A3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94A3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.

4z sot23 marking code

Abstract: marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23
Contextual Info: CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.

C30902SH-DTC

Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
Contextual Info: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the

Contextual Info: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as

C30971

Abstract: RCA H 515 PREAMPLIFIER TRANSIMPEDANCE optic fet 090Q C30997-010 C30997-250 C30997-XXXQC-YY
Contextual Info: E G v t & G/CANADA/OPTOELEK c / r 303DblD DODGlb? bôb H C A N A ID Silicon Photodiodes C30997 Series DATA SHEET Optics Tran sim p ed a n c e P re a m p lifie r M o d u le s W ith or W ith o u t Integral Fib e r O p tic P ig ta ils for D ete ction of 40 0 to 10 0 0 nm R a d ia tio n

C30971EL

Abstract: C30971 RCA Solid State Scans-002209 rca 036 C30971E RCA Solid State power devices
Contextual Info: E G & G/CANADA/OPTOELEK RC/1 30 30 bl0 ÜD D0S 54 H D H « C A N A T~- EH *£/- S ' / Solid State Detectors Electro Optics and Devices Developmental'Types C30971 E, C30971 EL Photodiodes Silicon Photodetectors for High-Speed, Wide Bandwidth Applications • Spectral Response Range - 10% Points - 400 to 1000 nm

rca 036

Abstract: C30957E photodiode demodulation
Contextual Info: £ I G t & G/CANADA/OPTOELEK c / 3D30bl0 OOGGISS SbM H C A N A ID Photodiode C30957E DATA SHEET Optics l T - W n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

Contextual Info: Document 170-1 SMT Power Inductors – DO3308P • Handle saturating currents up to 4.2 Amps • Defense Supply Center CID: A-A-59738 Designer’s Kit C309 contains 3 each of all values Core material Ferrite Core and winding loss See www.coilcraft.com/coreloss

photodiode demodulation

Abstract: EG*G Optoelectronics rca 036 C30957E
Contextual Info: ^Ü^EG kG CANADA LTD. Optoelectronics Division Wr$ï- Formerly; ItC il W Effective January 1, 1991 :tro ics Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

Contextual Info: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava­

Contextual Info: E G & G/CANADA/OPTOELEK ID D WM il ÆM E l e c t r o Im lf#IO p t i c s 30 3 0 b l D D O D O I B ^ 711 H C A N A Photodiode7^Vhi7 C30919E DATA SH EET Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module

Contextual Info: G & G/CANADA/OPTOELEK itesi ID D BDBGblD ODGGOMb Electro Optics and Devices T70 « C A N A /-Y/’b Solid State Detectors Developmental Types C30952 Series Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications

Contextual Info: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

tic 1060

Contextual Info: G E ELECTRO OPTICS R C il IQ D 3Ö741S4 □□0013e 1 « G E E O PhotodiodeHhbl C30919E DATASHEET Optics Photodlode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module • Responsivity Temperature Compensated to +10% for 1060 nm

RCA 014

Abstract: emitter "1060 nm" C30974E rca linear "photodiode " 011 photodiode Avalanche photodiode avalanche photodiode bias
Contextual Info: E G & G/CANADA/OPTOELEK IO 3D3ühlD DDDD157 737 • CANA ItCilE T - H - Î 7 Si Photodiode C30974E DATA SHEET Optics Rectangular Silicon Avalanche Photodiode Preamplifier Module ■ Responsivity at TA = 25°C 3.7 x 10s V/W at 900 ran — 1.8 x 10s V/W at 1060 mn

C30817

Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Contextual Info: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

C30916E

Abstract: rca 036 spot photodetector
Contextual Info: G & G/CANA]>A/OPTOELEK I t C J l 10 ]> I 3030blD 0000135 07b Electro uptics and Devices ICANA Photodiode Developmental Type C30916E - f - V 1-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications 8 5% typical at 900 nm Fast Tim e Response —

662k

Abstract: L1116 RCA photomultiplier RCA Solid State amplifier L-1116 RCA Solid State photodiode germanium scintillator C30994E photodiode Avalanche photodiode
Contextual Info: E 6 8, G / C A N A D A / O P T O E L E K IO D 3G3GblQ DQDDG4Ö ÖM3 • C ANA 7 = Y / 'i7 C30994E Solid State Gamma-Ray Detector Developmental Type Silicon Avalanche Photodiodes Coupled to Bismuth Germanium Oxide Bi4Ge30,2 Scintillators RCA Developmental type C 30994Econ­

090Q

Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet C30902 rca 514 QC-04 30080 46 spectran C30998-010 C30998-250 303Db
Contextual Info: E G 8. G / C A N A D A / O P T O E L E K R C /1 303db l0 ID DD00171 DD7 I CANA Silicon Avalanche Photodiodes C30998 Series Optics DATA SHEET '-HI-6 1 For Detection of 400 to 1000 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails