C305N Search Results

BTA1036N3

Abstract: BTC2411N3
Contextual Info: Spec. No. : C305N3 Issued Date : 2002.06.11 Revised Date :2006.06.12 Page No. : 1/ 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1036N3 Description • The BTA1036N3 is designed for using in driver stage of AF amplifier and general purpose amplification.

BTN4401N3

Abstract: BTP4403N3 for ic 556
Contextual Info: Spec. No. : C305N3-H Issued Date : 2003.06.13 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP4403N3 Description • The BTP4403N3 is designed for using in driver stage of AF amplifier and general purpose amplification.

BTA1036N3

Abstract: BTC2411N3
Contextual Info: Spec. No. : C305N3 Issued Date : 2002.06.11 Revised Date :2005.03.28 Page No. : 1/ 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1036N3 Description • The BTA1036N3 is designed for using in driver stage of AF amplifier and general purpose amplification.

Contextual Info: CWDM305N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305N is a high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET

PB CWDM305P

Abstract: CWDM305P marking code 8 lead soic package CWDM305N
Contextual Info: Product Brief CWDM305N Single, 5.8A N-Channel CWDM305P (Single, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) CWDM305PD (Dual, 5.3A P-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305N, CWDM305P, CWDM305ND,

Contextual Info: CWDM305N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305N is a high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET