C2655 Search Results

C2655 NPN Transistor

Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655
Contextual Info: C2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

Contextual Info: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS

Contextual Info: Agilent 8590L-Series Portable Spectrum Analyzers Product Overview 8590L 9 kHz to 1.8 GHz 8592L 9 kHz to 22/26.5 GHz 8594L 9 kHz to 2.9 GHz Low-Cost General Purpose RF or MW Spectrum Analysis with Frequency Accuracy Economical and Reliable Solutions with Frequency Accuracy

C2655 NPN Transistor

Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
Contextual Info: C2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

C2625 transistor

Abstract: C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855
Contextual Info: Rack & Cabinet Mounting Converters 150-12 k Watts C SERIES CE Marked - LVD & EMC • Over 1700 Different Models • DC Inputs 10 - 900 Volts • Single & Multi Outputs • Fully Wired Customised Racks • Parallel Redundant Systems • Euro Cassette or Wall Mount

C2655

Abstract: C2655 Y 2SC2655 BR C2655 C2655 Y 06 C2655 Y.8g C2655 Y 40 C2655 y 05 2SA1020
Contextual Info: C2655 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C2655 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。

c2655

Abstract: C2655 Y BR C2655 2SC2655 C2655 Y 06 C2655 BR 2sc2655 y C2655 Y 40 C2655 y 05 2SA1020
Contextual Info: C2655 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C2655 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。

c2655 equivalent

Abstract: C2655 C2654 C2655 characteristics C2656 C2659 C2652 C2658 C2651 C2653
Contextual Info: CY7C265 8K x 8 Registered PROM Features Functional Description D D The CY7C265 is a 8192 x 8 registered PROM. It is organized as 8,192 words by 8 bits wide, and has a pipeline output regĆ ister. In addition, the device features a programmable initialize byte that may be

C2655 NPN Transistor

Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06
Contextual Info: C2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

C2655 NPN Transistor

Abstract: C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655
Contextual Info: C2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW