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    C25 10 Search Results

    C25 10 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge KBPC2510W
    SUNMATE electronic Co., LTD 25 A single-phase silicon bridge rectifier with 50 to 1000 V voltage range, low reverse leakage current, high efficiency, surge overload rating to 400 A peak, and 1500 V RMS isolation voltage. Original PDF
    badge KBPC2510
    SUNMATE electronic Co., LTD 25 A single-phase bridge rectifier with 50 to 1000 V reverse voltage range, epoxy isolated case, and low forward voltage drop, designed for high efficiency and thermal performance in through-hole mounting applications.Single-phase bridge rectifier with 25A average forward current, 50 to 1000V DC blocking voltage, 1.1V max forward voltage drop per element at 12.5A, and isolation voltage from case to leads, housed in an epoxy case with heat sink.25 A single-phase bridge rectifier with 50 to 1000 V reverse voltage range, 1.1 V forward voltage drop at 12.5 A, and isolated epoxy case for low leakage current and high efficiency.Single-phase bridge rectifier with 25 A average forward current, 50 to 1000 V reverse voltage range, glass passivated die, epoxy case, and isolated mounting for low reverse leakage and high efficiency.Single-phase bridge rectifier with 25 A average forward current, 50 to 1000 V reverse voltage range, glass passivated die, epoxy case, and isolated mounting for low reverse leakage and high efficiency.25 A single-phase bridge rectifier with 50 to 1000 V reverse voltage range, 1.1 V forward voltage drop at 12.5 A, isolated epoxy case, and designed for through-hole mounting with #8 screw. Original PDF
    badge KBPC2510W
    Microdiode Semiconductor (MDD) Silicon bridge rectifiers, reverse voltage 50 to 1000 volts, forward current 25.0 amperes. Original PDF
    badge KBPC2510
    Microdiode Semiconductor (MDD) Silicon bridge rectifiers, reverse voltage 50 to 1000 volts, forward current 25.0 amperes. Original PDF
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    C25 10 Price and Stock

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    Nextgen Components KBPC2510L0L700

    BRIDGE RECT 1 PHASE 1KV 25A KBPC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KBPC2510L0L700 Bulk 4,000 400
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    • 1000 $4.89
    • 10000 $4.89
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    Navitas Semiconductor KBPC2510W

    BRIDGE RECT 1P 1KV 25A KBPC-W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KBPC2510W Bulk 1,769 1
    • 1 $5.59
    • 10 $5.59
    • 100 $2.65
    • 1000 $2.05
    • 10000 $1.92
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    Avnet Americas KBPC2510W Bulk 8 Weeks 50
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    Jamicon Corporation SC25-10WL

    2.5 MM W TO B CONNECTOR 10P HEAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SC25-10WL Bulk 490 1
    • 1 $0.35
    • 10 $0.30
    • 100 $0.26
    • 1000 $0.22
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    Rochester Electronics LLC CDC2510CPWG4

    IC PLL CLOCK DRIVER 24TSSOP
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    DigiKey CDC2510CPWG4 Tube 129 46
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    Ruland Manufacturing Co Inc MJSC25-10-A

    10 MM JAW COUPLING HUB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MJSC25-10-A Bag 118 1
    • 1 $43.95
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    C25 10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Rotary Switches

    Abstract: D17-1
    Contextual Info: 07/099 Moeller HPL0211-2001/2002 T0, T3 Rotary Switches Dimensions Surface mounting T0./I1 Drilling dimensions Base 33.5 c25 80 127 120 137 M20 27 T3./I2 Drilling dimensions Base M4 35.5 L-. 171 ∅8 180 160 M25 c25 100 c33 Surface mounting main switches


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    HPL0211-2001/2002 Rotary Switches D17-1 PDF

    Contextual Info: KELCO C25 INLINE FLOW SWITCH High performance 25mm inline flow switches with advanced features make the C25 an ideal choice for many system designers. FEATURES One piece brass body All position mounting Diesel and oil models available Choice of two electrical modules


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    PDF

    ASN100

    Abstract: IXSH45N100 bv 1500 sts
    Contextual Info: Low VCE sat IGBT IXSH/IXSM 45N100 V CES ^C25 v CE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES ^ Vco„ Td = 25°C to 150°C; RGE = 1 Mi2 = 25°C to 150°C V0ES VGEM ^C25 1000 V 1000 V Continuous ±20


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    45N100 O-247 O-204 ASN100 IXSH45N100 bv 1500 sts PDF

    Contextual Info: □IXYS MUBW 6-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1200V L.,. = 11 A FAVM U = 250 A VCES = 600 V VCES = 600 V 'C25 =7A VCE(Sat,= 2.0 V 'C25 =7A VCE,Sat,= 2.0 V


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    PDF

    Contextual Info: □IXYS MUBW 4-12 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 25 24 D 2Ï Preliminary data Rectifier Brake VRRM = 1600V L.,. = 11 A FAVM U = 250 A VCES Inverter = 1200 V ^C25 = 3.6 A VC E (sat) = 2.8 V VCES = 1200 V 'C25 = 3 - 6 A


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    Contextual Info: □IXYS MUBW 10-12A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1600V L.,. FAVM = 11 A U = 250 A VCES = 1200 V V CES = 1200 V 'C25 =3-6 A VCE(Sat,= 2 - 8 V 'C25 = 13 A


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    10-12A6 PDF

    MIXA81WB1200TEH

    Contextual Info: MIXA81WB1200TEH tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = 290 A I C25 90 A I C25 = I FSM = 1200 A VCE sat = = 120 A 1.8 V VCE(sat) = 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC


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    MIXA81WB1200TEH 60747and MIXA81WB1200TEH PDF

    Contextual Info: □IXYS MUBW 30-12 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter V RRM = 1600V *FAVM - 25 A U = 370 A VCES = 1200 V V CES = 1200 V 'C25 =18 A VCE(Sat,= 2.6 V 'C25 = 31 A V CE,Sat,= 2.2 V Features Input Rectifier Bridge D8 - D13 Symbol


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    PDF

    1xys

    Abstract: 90a944
    Contextual Info: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200


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    60N60 OT-227 1xys 90a944 PDF

    32N60BU1

    Abstract: 32N60B h32n60b e5200 32N60BU
    Contextual Info: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C


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    IXGH39N60B IXGH39N60BS O-247 39N60BS) 32N60BU1 32N60B h32n60b e5200 32N60BU PDF

    Contextual Info: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC


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    MIXA60WH1200TEH 60747and 20111111b PDF

    Contextual Info: MIXA20WB1200TMI tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I FSM = 70 A I C25 = 270 A VCE sat = = 28 A 1.8 V VCE(sat) = 28 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC


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    MIXA20WB1200TMI 60747and PDF

    Contextual Info: □IXYS MUBW 35-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter VRRM = 1200V *FAVM - 25 A lC QM = 370 A FSM VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) VCES = 600 V 'C25 = 38 A Vnc, H= 2.1 V CE(sat) Features Input Rectifier Bridge D8 - D13


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    igbt to247

    Abstract: s9011 IXGH24N60AU1S ixgh24N60
    Contextual Info: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25


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    IXGH24N60AU1 IXGH24N60AU1S T0-247 24N60AU1S) O-247 24N60AU1 B2-41 1XGH24N68AU1 W6H24WWMMl 24N80AU1 igbt to247 s9011 IXGH24N60AU1S ixgh24N60 PDF

    IC2560

    Abstract: thyristor module 700a NTC-10 ohm MIXA60WH1200TEH
    Contextual Info: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC


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    MIXA60WH1200TEH 60747and 20111111b IC2560 thyristor module 700a NTC-10 ohm MIXA60WH1200TEH PDF

    Contextual Info: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1200 V VCES = 600 V VCES = 650 V I DAV = 119 A I C25 I FSM = 360 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number


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    MIXA50WB600TED 60747and PDF

    D65VML

    Abstract: D65CEK1C5A C25DRJ350 S811V XTMC6A01 0A95 diode C25DND325 XTMF9A00
    Contextual Info: Motor Control and Protection Contactors 2.1 Contactors Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Compact Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . . . . 50 mm C25 Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . .


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    V9-T2-15 V9-T2-17 V9-T2-19 V9-T2-22 V9-T2-23 V9-T2-26 V9-T2-32 V9-T2-36 V9-T2-37 V9-T2-41 D65VML D65CEK1C5A C25DRJ350 S811V XTMC6A01 0A95 diode C25DND325 XTMF9A00 PDF

    Contextual Info: □IXYS MUBW 15-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data VCES = 600 V Ì 'C25 = 18 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)


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    40N30BD1

    Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o


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    IXGH40N30BD1 IXGH40N30BD1S O-247SMD 40N30BD1S) O-247 360VTj 40N30BD1 PDF

    smd diode 819

    Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C


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    IXGH32N60AU1 IXGH32N60AU1S O-247 32N60AU1S) IXGH32N60AU1 IXQH32N60AU1S XGH32N60AU1 smd diode 819 PDF

    G20N60

    Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
    Contextual Info: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48


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    24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247 PDF

    32N50

    Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C


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    32N50BU1 32N50BU1S O-247 32N50BU1S) 32N90BU1 32NS0BU1S B2-22 32N50 PDF

    IXGH32N60AU1

    Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90


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    32N60AU1 32N60AU1S 4b6b22b IXGH32N60AU1 IXGH32N60AU1S 4bflb22b 0003bQb IXGH32N60AU1 PDF

    1XGH24N60A

    Abstract: b236 b237 TXYS IXGH/24N60A
    Contextual Info: inixYS HiPerFAST IGBT V CES IXGH 24N60A ^C25 v * CE sat l fi Symbol Test Conditions 4 Maximum Ratings VCES Tj = 25°C to 150°C 600 VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES v GEM Continuous ±20 V T ransient ±30 V ^C25 Tc -2 5«C 48 A ^090 Tc =90°C


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    24N60A O-247 24N60AU1 B2-37 1XGH24N60A b236 b237 TXYS IXGH/24N60A PDF