C25 10 Search Results

Rotary Switches

Abstract: D17-1
Contextual Info: 07/099 Moeller HPL0211-2001/2002 T0, T3 Rotary Switches Dimensions Surface mounting T0./I1 Drilling dimensions Base 33.5 c25 80 127 120 137 M20 27 T3./I2 Drilling dimensions Base M4 35.5 L-. 171 ∅8 180 160 M25 c25 100 c33 Surface mounting main switches

Contextual Info: KELCO C25 INLINE FLOW SWITCH High performance 25mm inline flow switches with advanced features make the C25 an ideal choice for many system designers. FEATURES One piece brass body All position mounting Diesel and oil models available Choice of two electrical modules

Contextual Info: □IXYS MUBW 6-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1200V L.,. = 11 A FAVM U = 250 A VCES = 600 V VCES = 600 V 'C25 =7A VCE(Sat,= 2.0 V 'C25 =7A VCE,Sat,= 2.0 V

Contextual Info: □IXYS MUBW 4-12 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 25 24 D 2Ï Preliminary data Rectifier Brake VRRM = 1600V L.,. = 11 A FAVM U = 250 A VCES Inverter = 1200 V ^C25 = 3.6 A VC E (sat) = 2.8 V VCES = 1200 V 'C25 = 3 - 6 A

Contextual Info: □IXYS MUBW 10-12A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1600V L.,. FAVM = 11 A U = 250 A VCES = 1200 V V CES = 1200 V 'C25 =3-6 A VCE(Sat,= 2 - 8 V 'C25 = 13 A

Contextual Info: □IXYS MUBW 30-12 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter V RRM = 1600V *FAVM - 25 A U = 370 A VCES = 1200 V V CES = 1200 V 'C25 =18 A VCE(Sat,= 2.6 V 'C25 = 31 A V CE,Sat,= 2.2 V Features Input Rectifier Bridge D8 - D13 Symbol

1xys

Abstract: 90a944
Contextual Info: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200

32N60BU1

Abstract: 32N60B h32n60b e5200 32N60BU
Contextual Info: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C

Contextual Info: □IXYS MUBW 35-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter VRRM = 1200V *FAVM - 25 A lC QM = 370 A FSM VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) VCES = 600 V 'C25 = 38 A Vnc, H= 2.1 V CE(sat) Features Input Rectifier Bridge D8 - D13

Contextual Info: □IXYS MUBW 20-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Ì VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)

IC2560

Abstract: thyristor module 700a NTC-10 ohm MIXA60WH1200TEH
Contextual Info: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC

Contextual Info: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1200 V VCES = 600 V VCES = 650 V I DAV = 119 A I C25 I FSM = 360 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number

D65VML

Abstract: D65CEK1C5A C25DRJ350 S811V XTMC6A01 0A95 diode C25DND325 XTMF9A00
Contextual Info: Motor Control and Protection Contactors 2.1 Contactors Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Compact Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . . . . 50 mm C25 Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: □IXYS MUBW 15-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data VCES = 600 V Ì 'C25 = 18 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

Contextual Info: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C

3un6

Contextual Info: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat

Contextual Info: nixYS HiPerFAST IGBT with Diode IXGH 32N50BU1 V CES ^C25 V CE sat t rfi Symbol Test Conditions VCES VCGR T, =25°Cto150°C 500 V Tj = 25eC to 150° C; RGE= 1 MQ 500 V VGES VGEM Continuous 120 V Transient ¿30 V ^C25 Tc = 25° C ^C90 Tc =90° C ^CM Tc = 25° C, 1 ms

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

Contextual Info: PIXYS 1 HiPerFAST IGBT V CES IXGH 24N60A ^C25 V v CE sat tfi 600 V 48 A 2.7 V 275 ns « Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Td = 25 °C to 150°C; RQE = 1 M£2 600 V v GES Continuous ±20 V V GEM Transient ±30 V ^ C25 Tc = 25 °C

1SV215

Contextual Info: 1SV215 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV215 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 10.5 typ. • Low series resistance: rs = 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

Contextual Info: 1SV215 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV215 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 10.5 typ. · Low series resistance: rs = 0.6 Ω (typ.) · Excellent C-V characteristics, and small tracking error.

Contextual Info: IXA70I1200NA XPT IGBT VCES = 1200 V I C25 = 100 A VCE sat = 1.8 V Single IGBT Part number IXA70I1200NA Backside: collector (C) 3 (G) 2 (E) 1+4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature