c1237
Abstract: SP12T MS3112E MS3112E16-26P MS3112E-16-26P c237 ms3116E transistor c237 uPC1237 DC-12
Contextual Info: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu Multiposition Switches — SP11T-SP12T Series 110-120 SP11T-SP12T DC-12.4 GHz / SMA RF PERFORMANCE Frequency Range GHz
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sp11t-sp12tdc-12180ma100ma+12400maseque12tsp12t50-ohmc1237ms3112ems3112e16-26pms3112e-16-26pc237ms3116etransistor c237upc1237
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IRPP460
Abstract: diode C237
Contextual Info: M e gaM O S Power M O SFET IRFP460 VD S S = 500 V D cont p D S(on) = 20 A = 0.27 f l N-Channel Enhancement Mode, HDM OS™ Family Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V V», Tj = 25°C to 150°C; R os = 1 M£2 500 V VGs
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irfp460o-247c2-37irpp460+1diode c237
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sef520
Abstract: diode C238 sgsp311 sef522 SEF521 SG 2058
Contextual Info: S G S-THOMSON 0 7 E D ; 73C 17514 7 7 *3 1 r ii. . SEF520 '•J SEF521 V SEF522 SEF523 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.
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sef520sef521sef522sef523+4sef522/sef523sgsp311diode c238sg 2058
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diode c237
Abstract: diode C238 C237 diode
Contextual Info: P D - 9 .1 2 6 2 D International IO R Rectifier IRF7603 H E X F E T Pow er M O S F E T • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching
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irf7603c-239c-240diode c237+2diode c238c237 diode
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IRF624
Contextual Info: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec
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t-39-11t0-220abc-239irf624+2irf625c-240
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D 7176.1
Abstract: TA 7176 IC M74HC237M1R LC11810 M54HC237 M54HC237F1R M74HC237 M74HC237B1R M74HC237C1R 74ls237
Contextual Info: r z 7 SC S-TH O M SO N Ä T # Mûitë&itgfliMOeS M54HC237 M74HC237 3 TO 8 LINE DECODER LATCH . HIGHSPEED t P D = 12 ns TYP. at Vcc = 5 V . LOW POWER DISSIPATION Icc = 4 (xA (MAX.) AT TA = 25 *C . HIGH NOISE IMMUNITY Vnih = V n il = 28 % Vcc (MIN.) • OUTPUT DRIVE CAPABILITY
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m54hc237m74hc23754/74ls237m54hc237f1r+9m74hc237m1rm74hc237b1rm74hc237c1rm54/74hc237m54/m74hc237d 7176.1ta 7176 iclc1181074ls237
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transistor C143
Abstract: C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor Transistor c226 transistor c223 transistor C147 TRANSISTOR c231
Contextual Info: ElanSC520 Microcontroller CDP Revised: Tuesday, Aug. 10, 1999 Revision: 1.0 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials Item Quantity 1 2 1 127 3 46 Aug. 10,1999
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elansc520000mhz768khz333mhz+14318mhzecsma-25ecsma-24ecpsm29t-32transistor c143c144 transistorc225 diode smdtransistor c144transistor c233c143 transistortransistor c226transistor c223transistor c147transistor c231
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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zd500qf500rhu002n06200ma+16ot-323f820p33x33mm500mhzk4j52324qc512mbitsamsung r540samsung r590r721-r725c732 smd10000nfr616 r617r714-r715samsung r580b16 r649smd q535
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M5819P
Abstract: 5-pin smd c255 NPN C239 C312 diode c227 diode MOSFET R166 SPE1302-ND S5920Q NPN C246 diode c248
Contextual Info: AMD K6 SDB - TOP LEVEL Revised: Friday, March 12, 1999 K6SDBREVB Revision: REV C Item Quantity Reference Value _ 1 2 1 BT1 27 C1,C2,C4,C8,C12,C20,C21, C23,C26,C36,C37,C38,C42, C47,C56,C59,C60,C61,C62, C63,C64,C68,C79,C95,C97,
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qfp160100mhzssop4832-bit+16qfp208ts040qfp144tp11sh8pe68515plcc32m5819p5-pin smd c255npn c239c312 diodec227 diodemosfet r166spe1302-nds5920qnpn c246diode c248
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HSMS-2812BLK
Abstract: gs e501 smd diode c527 L404 c531 diode smd smd diode c525 FL201 epson main c224 smd diode c528 C529 DIODE smd
Contextual Info: Evaluation Board User Guide UG-294 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD9644/AD9641 Analog-to-Digital Converters FEATURES DOCUMENTS NEEDED Full featured evaluation board for the AD9644 or AD9641
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ug-294ad9644/ad9641ad9644ad9641+13ad9524adp2114adp2108hsms-2812blkgs e501smd diode c527l404c531 diode smdsmd diode c525fl201epson main c224smd diode c528c529 diode smd
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FSD210 equivalent
Abstract: EER-2828 PC40 TDK EER3542 core EER3542 equivalent fan7382 bobbin EER3542 TDK Ferrite Core PC40 D223 DIODE EER2834
Contextual Info: Designing the Power Train of a 200W Power Supply with PFC Michael Weirich Global Power Resource Center, Europe www.fairchildsemi.com Design issues for 200W PSU System Specification • AC Input Voltage: 85 – 265 Vrms • Power-Factor: > 0.95 • Total Output Power: 200W
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95v-265vfsd210 equivalenteer-2828pc40 tdk+7eer3542 coreeer3542equivalent fan7382bobbin eer3542tdk ferrite core pc40d223 diodeeer2834
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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mmbd4148200maot-23mbr0540+16od-1231000mado-214acb340a5245b225mwbc647bc657c1093smd diode c644diode smd c336bc679bc625smd diode c645smd diode c640smd diode r645
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77C7
Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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TAS5242
Abstract: transistor c923 transistor c915 dx C212 diode DCU 0805 C143 C923 C922 SWITCHING TRANSISTOR C144 C901
Contextual Info: Application Report SLEA056 - JULY 2006 TAS5086-5142V6EVM Application Report Tomas Bruunshuus Digital Audio & Video Products The TAS5086-5142V6EVM PurePath Digital customer evaluation module demonstrates the integrated circuits, TAS5086DBT and TAS5142DDV, from Texas Instruments TI .
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slea056tas5086-5142v6evmtas5086dbttas5142ddv+1332-bit24-bit5007pcbtas5242transistor c923transistor c915dx c212 diodedcu 0805c143c923c922switching transistor c144c901
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c225 diode smd
Abstract: SMD C236 DIODE SB950 Diode 1_b SMD diode C237 Crystek CVHD TSF153F c225 capacitor smd smd schottky diode c148 C241-C243
Contextual Info: National Semiconductor RD-179 High Speed Signal Path Applications October 8, 2009 1.0 Design Description 2.0 Features The SP16160CH1RB demonstrates a high-IF sampling receiver subsystem that provides signal amplification, digitization and clocking as used in wireless infrastructure systems.
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rd-179sp16160ch1rbadc16dv160lmh6517+12lmk04031bcsp-9-111s2c225 diode smdsmd c236 diodesb950diode 1_b smddiode c237crystek cvhdtsf153fc225 capacitor smdsmd schottky diode c148c241-c243
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d331 npn transistor
Abstract: pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450
Contextual Info: Application Report SLEA055 - JUNE 2006 TAS5508-5142K7EVM Application Report Jonas Svendsen, Tomas Bruunshuus Digital Audio & Video Products The TAS5508-5142K7EVM PurePath Digital customer evaluation module demonstrates the integrated circuits, TAS5508BPAG and TAS5142DKD, from Texas Instruments TI .
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slea055tas5508-5142k7evmtas5508bpagtas5142dkd+1432-bit24-bit48-bittic-hsink-015d331 npn transistorpin configuration npn transistor c458transistor c458d331 transistord330 npn transistord331 npn transistor pin configurationsmd diode d450c458 npn transistorsmd diode d451transistor d450
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transistor C458
Abstract: d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet
Contextual Info: Application Report SLEA061 – JUNE 2006 TAS5518-5152K8EVM Application Report Tomas Bruunshuus, Kim N. Madsen . Digital Audio and Video Products ABSTRACT The TAS5518-5152K8EVM PurePath Digital customer evaluation module
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slea061tas5518-5152k8evmtas5518pagtas5152dkd+1332-bit24-bit48-bittransistor c458d331 npn transistor pin configurationd331 npn transistorpin configuration npn transistor c458c458 datasheetc337 pnp transistord331 pnpc458 npn transistorsmd diode d451capacitor 100nf 50v 0805 datasheet
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L1312
Abstract: transistor c114 esh DIODE C921 UA78M12
Contextual Info: User's Guide SLAU230A – September 2007 – Revised October 2007 TAS5162DDV6EVM This user's guide describes the operation of the evaluation module for the TAS5162 Digital Amplifier Power Output Stage using the TAS5086 Digital Audio PWM Processor from Texas Instruments. The
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slau230atas5162ddv6evmtas5162tas5086+4l1312transistor c114 eshdiode c921ua78m12
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g31 m7 te MOTHERBOARD CIRCUIT diagram
Abstract: FDV301N SOT23 D E6327 Application
Contextual Info: User's Guide SLLU148 – May 2011 TLK10002 Dual-Channel, 10-Gbps, Multi-Rate Transceiver Evaluation Module This user’s guide describes the usage and construction of the TLK10002 evaluation module EVM . This document provides guidance on proper use by showing some device configurations and test modes. In
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sllu148tlk1000210-gbpsg31 m7 te motherboard circuit diagram+2fdv301n sot23 de6327 application
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transistor c114 esh
Abstract: transistor c913 transistor c915 C144 Audio Frequency Amplifier Transistor High transistor BC 548 Data 470r m3 J102 J103 NPN/transistor c114 esh TAS5086
Contextual Info: User's Guide SLLU096A – February 2007 – Revised March 2007 TAS5132DDV6EVM This user’s guide describes the operation of the evaluation module for the TAS5132 Digital Amplifier Power Output Stage using the TAS5086 Digital Audio PWM Processor from Texas Instruments. The document also provides measurement data and design
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sllu096atas5132ddv6evmtas5132tas5086+9transistor c114 eshtransistor c913transistor c915c144 audio frequency amplifier transistor hightransistor bc 548 data470r m3j102j103npn/transistor c114 esh
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88SA8052
Abstract: JMH330 marvell 88SA8052 SLG8SP513VTR RTL8103EL RT8206 UP6111AQDD 88SE8040 ICS9LPRS365BKLFT quanta
Contextual Info: 5 4 3 2 1 CPU FSB 133MHz ZA3 PCB STACK UP SCH FSB (133MHz) ZA3(11.6") Block Diagram LAYER 1 : TOP SCH PCIE (100MHz) SCH DA (96MHz) LAYER 2 : GND D CLOCK GEN CK505 (SLG8SP513VTR ,ICS9LPRS365BKLFT) SCH DB (100MHz) LAYER 3 : IN1 Intel@Atom(Silverthorne) LAYER 4 : IN2
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133mhzz520/z530100mhz96mhz+12clk1431818mhz88sa8052jmh330marvell 88sa8052slg8sp513vtrrtl8103elrt8206up6111aqdd88se8040ics9lprs365bklftquanta
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sfh817a
Abstract: 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter
Contextual Info: TND401/D Rev. 2, September 2010 300 W High Performance SLIM LCD TV Power Solution Jean-Paul Louvel LCD TV System Applications 2010 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated
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tnd401/d680uhefd30ncp1052p44g+12tp207stph9080nlsfh817a1n4007 sod123d217 optoncp1397rectifier diode d100diode zd201opto d206ncp1252zener diode 1206 6v8schematic diagram lcd tv sharp inverter
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88E1119R
Abstract: 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13
Contextual Info: LatticeECP3 Versa Evaluation Board User’s Guide August 2012 Revision: EB62_01.5 LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the
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25mhzhdr40ats120sm-1hc-49/us-sm+151k-0402smt20k-0402smt100pf-0402smt3uf-10v-0805smthc49us-2588e1119r88e1119smd transistor m21aa7 smd diodew18 smd transistorsmd transistor f21w21 transistor smdsot w17 smd transistormt41j64m16jt-15esmd transistor y13
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88E1119R
Abstract: 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13
Contextual Info: LatticeECP3 Versa Evaluation Board User’s Guide February 2012 Revision: EB62_01.4 LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the
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hc49us-25000mabjubhc49/us1k-0402smt+15erj-2rkf3012x1/10w20k-0402smterj-2rkf2002x100pf-0402smt88e1119r88e1119aa7 smd diodesmd transistor m21lfe3-35e-fn484cesmt41j64m16jt-15esmd transistor w18w17 smd package transistorw18 smd transistorsmd transistor y13
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