TQ3131
Abstract: TQ5131
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ3131 C2 Control Logic DATA SHEET L1 C2 VDD GND GND RF IN 3V Cellular Band CDMA/AMPS LNA IC RF 50 ohm OUT RF Out GND C3 Control Logic Features Small size: SOT23-8 Single 3V operation Low-current operation Product Description
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TQ3631
Abstract: TQ3632 TQ5631 TQ5633
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ3632 C2 Control Logic DATA SHEET L1 C2 VDD GND GND RF IN Low Current, 3V PCS Band CDMA LNA IC RF 50 ohm OUT RF Out LNA gnd C3 Control Logic Features Small size: SOT23-8 Single 3V operation Low-current operation Product Description
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TQ3132
Abstract: TQ5131 TQ5132 triquint LNA
Contextual Info: WIRELESS COMMUNICATIONS DIVISION C2 Control Logic TQ3132 L1 C2 VDD GND GND RF IN DATA SHEET Low Current, 3V Cellular Band CDMA/AMPS LNA IC RF 50 ohm OUT RF Out GND C3 Control Logic Features Small size: SOT23-8 Single 3V operation Product Description Low-current operation
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TQ3631
Abstract: TQ5631
Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ3631 C2 Control Logic DATA SHEET L1 C2 VDD GND GND RF IN 3V PCS Band CDMA LNA IC RF 50 ohm OUT RF Out LNA gnd C3 Control Logic Features Small size: SOT23-8 Single 3V operation Low-current operation Product Description Gain Select
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IC 7403
Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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mmbt2222apzt2222aot-23ot-223+5mmpq2222soic-16nmt2222ic 7403pn2222a
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BCW30
Abstract: C212
Contextual Info: SEMICONDUCTOR BCW30 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C2 1 2 Item Marking Description Device Mark C2 BCW30 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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CBVK741B019
Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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MMPQ2907
Abstract: SOIC-16
Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*
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BCW29R
Abstract: BCW30
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995_ PARTMARKING DETAILS - BCW29 BCW30 BCW29R BCW30R - C1 C2 C4 C5 COMPLEMENTARY TYPES - BCW29 - BCW31 BCW30 - BCW32 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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NCS2500
Abstract: NCS2502 video amplifier SOT23-6 8678 sot23-5 AD8057 AD8038 AD8055 TSH341 NJM2711 22MF 470MF NCS2501 NCS2510 NCS2511
Contextual Info: Vs+ Vs+ Rm | Rg = 757 C2 10n U1 IN Rf1 R1 Rm R2 Rg2 R1 75 C4 10n VsZ = 1007 CAT-5 R2 Rg2 OUT 757 COAXIAL CABLE DRIVER C3 10n U2 Rf2 R3 75 Rg VsVs+ OUT 75 Rf 50 C2 10n R3 Rg1 R2 U2 IN R4 C3 10n Vs+ R5 50 C4 10n VsDIFFERENTIAL LINE DRIVER C1 0.2Mn C3 10n
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vsc17ncs2500200ublicationbrd8052-1+10brd8052/dncs2502video amplifier sot23-68678 sot23-5ad8057 ad8038 ad8055 tsh341 njm271122mf470mfncs2501ncs2510ncs2511
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2N3904 SOT-23
Abstract: mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild
Contextual Info: 2N3904 MMBT3904 C E C B TO-92 SOT-23 E B Mark: 1A MMPQ3904 E1 PZT3904 B4 E4 B3 E3 B1 E1 B1 SOIC-16 C C4 C4 C3 C3 C2 C2 C1 E C B C1 SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to
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2n3904mmbt3904ot-23mmpq3904+13pzt3904soic-16ot-2232n3904 sot-23mark e4 sot-23mmbt3904 1a2n3904 transistor2n3904 equivalent2n3904 data sheet2n3904 diefairchild sot-223 markh 2n3904switch fairchild
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BCW29R
Abstract: BCW29 BCW30R BCW30 MV SOT23 PARTMARKING MV BCW31 BCW32 720 sot23 DSA003672
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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bcw29bcw30bcw29rbcw30r+6bcw31bcw32mv sot23partmarking mv720 sot23dsa003672
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Contextual Info: SMBD7000/ MMBD7000 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000/ MMBD7000 s5C 1 = A1 Pin Configuration 2 = C2 3=C1/A2 Package SOT23 Maximum Ratings Parameter
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a1 sot23
Abstract: BGX400
Contextual Info: BGX400 Silicon Switching Diodes 3 Switching applications High breakdown voltage Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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Contextual Info: SMBD7000 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99
Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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ZXTC2045E6TC
Contextual Info: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information
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DUAL NPN SOT23-6
Abstract: NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors
Contextual Info: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 B1 Applications • C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information
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BAV199
Abstract: marking jys jys diode
Contextual Info: BAV199 3 Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 2 Connected in series 1 VPS05161 3 1 2 EHA07005 Type BAV199 Marking JYs Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT23 Maximum Ratings Parameter Symbol
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BAW156
Contextual Info: BAW156 3 Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times 2 Common anode 1 VPS05161 3 1 2 EHA07006 Type BAW156 Marking JZs Pin Configuration 1 = C1 2 = C2 3 = A1/2 Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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730116
Abstract: deutsch coax socket non-inverting amplifier sot23-6 layout SOT23-6 package CLC730116
Contextual Info: SOT23-6 Op Amp Evaluation Board Part Number CLC 730116 . Figure 2 illustrates the inverting schematic for the board. +V C C C2 + The CLC730116 evaluation board is designed to aid in the characterization of National’s 6-pin, monolithic amplifiers, that are available in the SOT23-6 package.
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ot23-6clc730116730116deutsch coax socket+3non-inverting amplifiersot23-6 layoutsot23-6 package
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1N4148 SMD
Abstract: diode 1N4148 SMD TRANSISTOR C3225 TRANSISTOR SMD p1 resistor SMD footprint smd transistor p5 1n4148 smd diode 0603 smd resistor footprint smd transistor c6 1N4148 0603
Contextual Info: Designator Comment U1 TDE1708DFT U2 C1, C7 C2 Description Footprint LibRef SupplierName SupplierOrderCode Intelligent power switch DFN 4x4 TDE1708DFT STMicroelectronics TDE1708DFT ST7LITEUS5 8-bit MCU with single voltage Flash memory, ADC, timers DFN8 10nF
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tde1708dft100nfb37941a1103k0b37941a5104k0+13b37931a5103k010uf/6b37931k0104k01n4148 smddiode 1n4148 smdtransistor c3225transistor smd p1resistor smd footprintsmd transistor p51n4148 smd diode0603 smd resistor footprintsmd transistor c61n4148 0603
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ZC930
Contextual Info: SOT23 HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode Nom inal Capacitance at VR=2V, f=1MHz Ctot Reverse Breakdown Voltage Type Vr V Min pF Typ pF Capacitance Ratio at f=1MHz C2/C20 Max pF Q at V r =3V f=50MHz Min Max Typ Device Code ZC830A 25 9.0 10.0
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