C2 MARKING CODE Search Results

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage

TFK 715

Abstract: BAW56S
Contextual Info: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363

183S

Abstract: Q62702-C2377
Contextual Info: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

Contextual Info: DB2S308 Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features  Low forward voltage VF  Short reverse recovery time trr  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: C2

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

6A1 diode

Abstract: marking code 76s 7006S 6A1 MARKING
Contextual Info: SIEMENS BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 3 • Available with CECC quality assessment A1/A2 2 C2 1 . R FI Type Marking

C2 marking code

Contextual Info: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

PART NUMBER MARKING SC70-6

Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Contextual Info: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching

marking a4 SOT-143

Abstract: SOT 143 footprint sc70-3 PCB PAD A5 sot-23 single DIODE 2805 diode bridge marking code C4 Sot 23-5 sot143 marking code A3
Contextual Info: Agilent HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* Description/Applications Package Lead Code Identification, SOT-323 (Top View) These Schottky diodes are

Contextual Info: NOTE 2. CONTACT PLATING CONTACT AREA:Au 0.1//m MIN. OVER Pd/Ni 9:1 1m MIN. TERMINAL AREA:TIN/LEAD ALL OVER:Ni 1.21m MIN. NOTE 3.DATE CODE MARKING 014 ( m AV JP AV M m (dM 1— ' *•1 k k ^ p j— M ^ 1^1 L (HOLD DOWN) 9.TREF. CONNECTOR MATING FACE n I I

T-100

Abstract: k3850 k 3850
Contextual Info: THERMAL SENSORS THERMAL SENSORS THIN FILM PLATINUM PTC Automotive SDT73V STRUCTURE 1 2 3 4 5 6 Protective coating Platinum thin film element Inner electrode Nickel plating Solder plating Ceramic substrate IDENTIFICATION PRODUCT CODE COATING COLOR MARKING Black

BCV62C

Contextual Info: SIEMENS PNP Silicon Double Transistors • • • • BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks

44S DIODE

Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
Contextual Info: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065

2-20C8

Contextual Info: TYPE HA POLAR Case Code 2 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 3 Volts Cl C2 C3 C4 C5 C6 C7 C8 C9 4 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 6 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 10 Volts CO Cl CO Cl CO Cl CO Cl CO Cl CO Cl C2 C3 C4 C5 C6 C7 C8 C9 Subminiature, Leaded

502a hall sensor

Abstract: hall sensor smd 502A TO-92UA SMD Hall sensors code se micronas ordering codes SMD Hall sensors code C to92ua hal 502a
Contextual Info: Hall Sensors: Ordering Codes, Packaging, Handling Edition Sept. 12, 2001 6200-249-2E Hall Sensors: Ordering Codes, Packaging, Handling Contents Page Section Title 3 3 4 4 4 4 5 6 6 7 1. 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Ordering Codes for Hall Sensors Overview

E hall sensor smd 4 pin

Abstract: MLX90224EVAB TRANSISTOR SMD MARKING CODE XB smd code 24 hall effect Zener diode smd marking code va B102 CECC00802 J-STD-020A transistor smd marking code Mt smd 5 pin marking
Contextual Info: MLX90224 Dual Hall Effect Switch Features and Benefits Chopper Stabilized Amplifier Stage CMOS for Optimum Stability, Quality and Cost Dual Output 5V to 24V Operation Phase/Direction Detection option code B Applications Direction Detector Speed Sensor Shaft Encoding

Contextual Info: SDT310HCTP small type platinum thin film thermal sensors narrow EU features dimensions and construction L Welding Point Reinforcing Coating Protective Coating ℓ Lead Wire t W Type d f SDT310 H Type Size Code H: W=1.2mm CT Operating Temperature CT: -55°C~400°C

st morocco tip122

Abstract: Darlington pair IC schematic morocco tip122 MJD122 MJD122-1 MJD122T4 MJD127 MJD127-1 MJD127T4 TIP122
Contextual Info: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube

diode hp 2800

Abstract: hp 2800 diode HP 2804 diode hp 2835 schottky diode hp 2810 mark a7 sot23 DIODE HSMS-2820 marking code C9 HSMS-2800 HSMS-280X
Contextual Info: Thal H E W L E T T WL/iÆ P A C K A R D Surface M ount RF Schottky Barrier D iodes Technical Data HSMS-28XX S eries F eatu res Package Lead Code Id en tification • S urface M ount SOT-23/SOT143 Package • Low Turn-On V oltage A s Low as 0.34 V a t 1 mA

transistor marking code 7e

Abstract: D 843 Transistor transistor MUI
Contextual Info: SIEMENS NPN Silicon Double Transistors • • • • BCV61 To be used as a current mirror Good thermal coupling and V b e matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel B C V 61 A B C V 61 B B C V 61 C

d1802 transistor

Abstract: d1802 transistor d1802 transistor d1802 dpak STD1802-1 ic d1802 STD1802 STD1802T4
Contextual Info: STD1802 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ Ordering Code Marking Shipment STD1802T4 D1802 Tape & Reel STD1802-1 D1802 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC

d1805

Contextual Info: STD1805 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ Ordering Code Marking Shipment STD1805T4 D1805 Tape & Reel STD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC

diode RA 225 R

Abstract: MARKING CODE A1 SOT343
Contextual Info: SIEMENS BAT 62-07W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 3 o- N 2 -o EHAQ70G8 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration BAT 62-07W 62s