C1DC172SD Search Results

2SA1217

Abstract: 7270 ic 2SC2877
Contextual Info: "Sb TOSHIBA -CDISCRETE/OPTOD- dF | c1Dc172SD 0 0 D 7 2 7 D t. f .y 9 09 7250 2 S TO SHIBA A CD ISCRETE /OP T O 1 2 1 7 1 5òC 07270 S IL IC O N PNP E P IT A X IA L T Y PE PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER Unit in mm ' 7.7 MAX. LOW SPEED SWITCHING

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.9 GHz to 5.1 GHz • High gain - G-idB = 9.0 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package