C150 DIODE Search Results

C190AKT

Abstract: LTST-C170XKT ltst-c155 LTST-C190XKT LTST-C155XKT ckt-100
Contextual Info: Chip LED Lamp LTST- C150/170/190AKT Amber LTST- C150/170/190CKT AlGaAs Red LTST- C150/170/190EKT Red Orange LTST- C150/170/190GKT Green LTST- C150/170/190YKT Yellow LTST- C155GEKT Red Orange Dual Color LTST- C155GYKT Green-Yellow Dual Color Features Package in 8mm tape on 7" diameter reels.

LTSTC150KAKT

Contextual Info: Ultra Bright AlInGaP Chip LED Lamp LTST- C150/170/190KAKT Red Orange LTST- C150/170/190KFKT Yellow Orange LTST- C150/170/190KRKT Super Red LTST- C150/170/190KSKT Yellow LTST- C150/170/190KYKT Amber Yellow Features High brightness AlInGaP material Package in 8mm tape on 7" diameter reels.

diode DB3 C531

Abstract: DB3 C531 diode db3 c432 MST9131 DB3 C502 mstar scaler DB3 C432 diode DB3 C535 rtl8201 schematic circuit RTL8201 Design
Contextual Info: 5 X A X X_FM X X_FM 2 1 +3VS H25 C266 C552 C704 C_NC C_NC C_NC H8 HOLES_S276D118 H16 HOLES_S276D118 H2 HOLES_S276D118 HOLES_S276D118 C150 C563 C78 C163 C_NC C_NC C_NC C_NC +1.8VS H22 H15 HOLES_S276D118 HOLES_S276D118 H3 HOLES_S276D118 H24 H12 HOLES_S276D118

S10601

Abstract: C10601 T10601 nec 3S4M S4004F1 2N2454 GE C150 s20600 S04070H S4003LS3
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 S04050H S04070H S04100H S20600 S2061 0 NCM400C 2N1604 NCR400B S4003LS1 C10802 g~g:g~ 15 20 C10804 C10804 S4003LS2 S4003LS3 3P4J 3P4J-Z CR3CM8 CR3CM8 ~~~;g~6 25 30 TXF4005 TYF4005 OR03E C150

IRF 80A

Abstract: C-150 irf 600v WF-2
Contextual Info: PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

C-150

Abstract: IRGS4B60KD1 IRGSL4B60KD1 40a 15v diode IGBT 600V 40A diode hexfet 40A 600V
Contextual Info: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

10a 400v bipolar transistor

Abstract: C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v
Contextual Info: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: BZD23 SERIES REGULATOR DIODES Glass passivated diodes in herm etically sealed axial leaded ID* glass envelopes. They are intended for use as voltage regulator and transient suppressor diodes in medium power regulation and transient suppression circuits. The series consists o f B Z D 2 3 -C 7 V 5 to B ZD -C 510 in the normalized E24 range.

Contextual Info: N AMER PHILIPS/DISCRETE b'JE D bbS3^31 00Eb7E'l 7S7 « A P X BZT03 SERIES l REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres­

PH diode C47

Abstract: C8V2 PH BZT03 marking FZM PH C47 C270 diode c82 ScansUX7 ph c8v2 C100
Contextual Info: SbE D TllDÖEb D0407ST SMI • P H I N PHILIPS INTERNATIONAL BZT03 SERIES T - / 1 - 2 3 _ SbE D REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres­

BZW03

Abstract: d7v5 BZW03-C510 BZW03-C7V5 C100 C110 C120 C130 C150 C160
Contextual Info: • ^53^31 □ □ E b 7 T 3 bS2 H A P X N AMER PHI LIPS /DI SCRETE B ZW 03 SERIES b'IE D REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended fo r use as voltage regulator and transient suppressor diode in medium power regulation and transient suppression

BZT03 27

Abstract: BZT03-C510 C82 diode BZT03 BZT03-C7V5 C100 C110 C120 C130 C150
Contextual Info: N AMER PH IL IPS/DISCRET E b'îE D bbS3^31 GGEbTET 7S7 • APX I BZT03 SERIES REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended fo r use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres­

BZT03 27

Abstract: C82 diode BZT03 BZT03-C510 BZT03-C7V5 C100 C110 C8V2 DIODE C3331
Contextual Info: N AMER PHILIPS/DISCRETE bbS3^31 b'îE D 00Eb7E'ì 757 • APX BZT03 SERIES I REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres­

c82 004

Abstract: C6V8 C510 BZD27 C82 diode BZD27-C3V6 BZD27-C7V5 C100 C110 C270
Contextual Info: Philips Semicpnductors bbSB^Bl QQ2b72Q S2T BBAPX Voltage regulator diodes 1 BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surface mounted implosion diode SMID glass envelopes. They are intended for use as voltage regulator and

BZD27

Contextual Info: Philips Semlcpnductors HU b b 5 3 c131 QQ2b72D S2T HiAPX Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surface mounted implosion diode SMID glass envelopes. They are intended

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

BZD23

Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
Contextual Info: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for

5C transistor

Abstract: C100 C110 C120 C130 C150 C160 C180 C200 ZE1.5
Contextual Info: ZE1.5C . SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages upon request. Absolute Maximum Ratings Ta = 25oC

Zener 15c

Abstract: ZE1.5 5C transistor C100 C110 C120 C130 C150 C160 C180
Contextual Info: ZE1.5C . SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages upon request. Absolute Maximum Ratings Ta = 25oC

transistor C110

Abstract: C100 C110 C120 C130 C150 C160 C180 C200
Contextual Info: ZE2C … SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages are upon request. Absolute Maximum Ratings Ta = 25oC

C100

Abstract: C110 C120 C130 C150 C160 C180 C200
Contextual Info: ZE2C … SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other tolerance and higher Zener voltages are upon request. Absolute Maximum Ratings Ta = 25oC

MGA018

Abstract: 305 5VL c7v5 C510 C82 diode c82 004 mga01 Philips MBB working of voltage regulator BZD23-C3V6
Contextual Info: N AMER PHILIPS/DISCRETE t'JE J> bb53T31 002b711 51? * A P X m Philips Sem iconductors Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for use as voltage regulator and

IRGP30B60

Abstract: C-150 IRGP30B60KD-E
Contextual Info: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

D0214AC

Abstract: D0-214AC BZG03-C33
Contextual Info: T emic Semiconductors Zener Diodes continued Electrical Characteristics and r^jT ^Znorn Ir atV8 Part Number V y n V J*A Z-Diodes PVmax = 3 W, in SMD Package, P z s m = 600 W, tp = 100 |is BZG03/C10 10 9.4 to 10.6 <4 50 < 10 7.5 Izr for Vzr : mA BZG03/C11