C15 DIODE Search Results

HB-1M1608-121

Abstract: LU1T516-43 NM7010B Ceratech 120R 1SS181 2X14 RTL8201BL W3150A CONNECTOR-RJ45
Contextual Info: BD REV : 1.2 NM7010B No. COUNT LOCATION 1 CP1 1 2 1 CP2 3 1 CP3 C1,C5,C6,C7,C9,C10,C11,C13 ,C14,C15,C16,C17,C18,C19, 4 17 C20,C21,C22 5 2 C8,C12 6 1 D1 7 2 JP2,JP1 8 2 L2,L1 9 1 L3 10 1 R1 11 1 R2 12 2 R4,R3 13 4 R5,R6,R7,R8 14 1 R9 15 2 R10,R11 16 2 R12,R13

actp-1514

Abstract: ACTP-1501 ACTP-1555 ACTP-1572 ACTP-1662
Contextual Info: Advanced Confrol Components COAXIAL TUNNEL DIODE DETECTORS Superior performance and high reliability are designed into these detectors. They offer extremely stable output voltage over wide temperature excursions, typically +/-0.15dB from -65°C to +100°C at 1GHz and approx. +/-0.3dB at

Contextual Info: P/N: C-15/13-FXXM-PX-XXXX/XXX-XX 1550nm Emitting, 1310nm Receiving PIN-TIA,5 pin-out, 3.3V Bi-directional Diplexer Optical Module Features z z z z z z z z z z z z z Single fiber bi-directional operation Laser diode with multi-quantum- well structure Low threshold current

InGaAs Photodiode 1550nm

Abstract: C15 ST LC BOSA 13-F02 BOSA sensitivity dB photodiode pin 1550nm bosa 1310nm
Contextual Info: 1550nm Emitting , 1310nm Receiving PIN-TIA, 3.3V , Bi-directional Diplexer Optical Module C-15/13-F02/04/06- P(B)X-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA

PIN Photodiode 1550nm sensitivity -55

Abstract: PIN-TIA PIN-TIA 5v InGaAs Photodiode 1550nm 13D01
Contextual Info: 1550nm Emitting DFB , 1310nm Receiving (PIN-TIA, 5V) , Bi-directional Diplexer Optical Module C-15/13-D01/03/05- PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA

13-DXX-PX-SXXX

Abstract: InGaas PIN photodiode InGaAs Photodiode 1550nm dfb laser diode 1310nm -1550nm
Contextual Info: 1550nm Emitting DFB , 1310nm Receiving (PIN-TIA, 3.3V) , Bi-directional Diplexer Optical Module C-15/13-D02/04/06- PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current

InGaAs Photodiode 1550nm

Contextual Info: 1550nm Emitting DFB ,1310nm Receiving(PIN-TIA,3.3V), Bi-directional Diplexer Optical Module C-15/13-DXX-PX-SXXX/XXX-XX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with trans-impedance amplifier

PIN Photodiode 1550nm

Abstract: PIN-TIA 5v InGaAs Photodiode 1550nm
Contextual Info: 1550nm Emitting , 1310nm Receiving PIN-TIA, 5V , Bi-directional Diplexer Optical Module C-15/13-F01/03/05- PX-SXXX/XXX Features • Single-fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA

PIN Photodiode 1550nm sensitivity

Abstract: InGaAs Photodiode 1550nm 13-DXX-PX-SXXX
Contextual Info: 1550nm Emitting DFB 1310nm Receiving(PIN-TIA,3.3V), Bi-directional Diplexer Optical Module C-15/13-DXX-PX-SXXX/XXX Features • Single fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with trans-impedance amplifier

ST 6497

Abstract: w 13001
Contextual Info: P/N: C-15/13-001-PX-SXXX/XXX-XX 1550nm Emitting , 1310nm Receiving PIN , Bi-directional Diplexer Optical Module Features z z z z z z z z z z Single fiber bi-directional operation Laser diode with multi-quantum- well structure Low threshold current Fast pulse response

bzx84

Abstract: W5 c47 10C11 zener C47
Contextual Info: SOT23 SILICON PLANAR BZX84 SERIES C2V7 to C47 VOLTAGE REGULATOR DIODES ISSUE 3 - NO VEMBER 1995 Q PIN CONFIGURATIO N 1 L A ì SOT23 ABSOLUTE MAXIMUM RATINGS as per Electron Coding Sytem . PARAMETER SYMBOL Voltage Range vz Nom inal Tolerance C ±5 % 'f 250

C5VI

Abstract: C2V4 c5v6 c4v7 c4v3 C3V3 c6v2 c8v2 C3V9 C18-C20
Contextual Info: Temic Semiconductors SOD8O D03S QuadroMELF Mici Zener Diodes Part Number SODSO Quadro­ D035 MELF Mtao- ^Znom TZM V BZX55. M p-F BZT55. BZM55. Z-Diodes PV = 500 mW C2V4 C2V7 C3V0 C3V3 C3V6 C3V9 C4V3 C4V7 C5VI C5V6 C6V2 C6V8 C7V5 C8V2 C9V1 CIO X ll C12

IR 448H

Abstract: metelics FSCM 59365 FSCM 59365
Contextual Info: MSS-50,000 Series High Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 5fi • High dynamic range mixers, modulators, samplers • High Fco — 370 GHz • Doublers • Low leakage current <1 nA at IV typical • High-speed switches

BZX 850 5V1

Contextual Info: BZX84C series SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ 2.8 0.14 0.48 038 4* 3 2.6 2.4

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BZX84C series SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes

Contextual Info: PAM8124 EVB User Guide PAM8124-EV Board User Guide AE Department 1. Revision Information Date Revision Description 2013/8/16 V1.0 Initial release Comment This application note contains new product information. Diodes, Inc. reserves the right to modify the product specification without notice.

ACSP-2630N

Abstract: ACSP-2572N
Contextual Info: Advanced Control Components BIASED COAXIAL SCHOTTKY DETECTORS The ACSP series of high sensitivity detectors exhibit superior electrical and environmental reliability characteristics. They contain hermetically sealed modules, internal RF matching, DC return, and RF bypass capacitor. In

Contextual Info: • bb53tm □ □ Eb7T3 bS2 H A P X N AMER PHILIPS/DISCRETE BZW 03 S E R IE S b^E D REGULATOR DIO DES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppression

BZX70C

Abstract: philips zener diode c47- DIODE BZX70
Contextual Info: T N AKER PHILIPS/DISCRETE MAINTENANCE TYPE SSE D • ^ 53=131 0022671 0 B B Z X 7 0 S E R IE S 7-H-JST R E G U L A T O R D IO D E S A range o f diffused silicon diodes in plastic envelopes, intended for use as voltage regulator and transi­ ent suppressor diodes in medium power regulators and transient suppression circuits.

Contextual Info: Advanced Confrol Componenfs BIASED COAXIAL SCHOTTKY DETECTORS WITH INTERNAL PADS OR RESISTORS In«. This family of padded input detectors allows for higher input power range and better VSWR than pure biased schottky units. They come in a variety of package styles. Module versions for microstrip or stripline applications are also

Philips MARKING CODE top e4

Abstract: C6V2 ST marking code C9 BZX585 BZX585-B2V4 BZX585-B2V7 BZX585-B3V0 BZX585-B3V3 BZX585-B3V6 BZX585-B3V9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BZX585 series Voltage regulator diodes Product specification Supersedes data of 2000 Jun 06 2000 Oct 20 Philips Semiconductors Product specification Voltage regulator diodes BZX585 series FEATURES PINNING • Total power dissipation: max. 300 mW

Contextual Info: bb53T31 0025751 20b « A P X BZV90 SERIES b?E D N AI1ER PHILIPS/DISCRETE _ J V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT223 plastic envelope, intended fo r stabilization applica­ tions in thick and th in -film circuits.

c82 004

Abstract: C4V7 517
Contextual Info: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass

DIODE 914

Abstract: ESJA53-18A GDD4775
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A nade by RJJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.