C12 5T Search Results

Contextual Info: HARRIS SEMICOND SECTOR 37E 3 M3D2271 □ □ S S 3 C12 fl IHAS Technical D a ta _ T -M 3 -2 1 CD54/74AC20 CD54/74A C T20 1A Advance Information Dual 4-Input NAND Gate IB 1C 10 2A Type Features: • Typical propagation delay AC20 : 6 ns @ Vcc = 5 V, Ta - 25° C, C l = 50 pF

159C

Abstract: TB159C SR401 SR-401 470PF UT34-17 10NF Torroid 125mu 100WPEP
Contextual Info: C17 22uF Tantalum Vds=28Vdc 850mu Torroid 10K Pot OUT V Regulator IN ADJUST L14 18AWG 5turns .130in dia C13 10NF T2 R2 15 T1 C4 470PF C15 L18 18AWG 10NF 15turns C16 47UF63V Electrolytic R7 10K T3 R3 10K C7 470PF UT34-17 UT 85-15 T4 RF out C5 8.2 PF UT56-50

diode c12

Abstract: zener c18 hp DIODE C13 C13P zener 18 01UF 12NH 18PF 30PF LK802
Contextual Info: RF in C6 1PF 7 2500mu Ferr Long UT34-25 1.3in C4 18PF C5 18PF 19 L2 12NH 4 C3 7.5PF R2 1.5K R1 1.5K 17 22 C1 3PF 10K pot 10K pot 2 1 General 24 HP 7.5V 18 18AWG 5turns C9 30PF 63V,47uf C10 3.6PF C8 30PF 63V,47uf Vds=28Vdc 1.6in Sheet TB 150 1 470 - 860MHz , 45W, 28V

Contextual Info: 64 J9 Header, DNP 1 2 3 4 5 6 L1 Demonstration Board – EPC9102 Schematic VIN VIN_FILT 1 Q19 GPUL J1 Q21 EPC2001 EPC2001 GPUR C3, C6, C9 Rev. 1.0 C39, C42 A 2.2uF DNP PRYSWB T2 PRYSWA A 5T ER18 R6 10 D9 BAT41 VIN_FILT J4 5 5 4 2 C36 0.1U EPC2001 1 GND D2

ne5550

Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm

11Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

CD 1691 CB

Abstract: ba 3917 SM5308 sm5308bs pinout of ic 4078
Contextual Info: SM5308BS 3-channel Video Buffer with Built-in wideband LPF OVERVIEW The SM5308BS is a 3-channel video buffer with built-in 5th-order lowpass filters. The lowpass filter cutoff frequency range can adjust from 5.0MHz to 44MHz*1 by 256 steps. The lowpass filter supports 480i to 1080i format, video signal equipment analog input/outputs. For video input systems, the device functions as a next-stage

ILI9325

Abstract: G85 wafer format ILI9325DS ili9325 lcd
Contextual Info: ILI9325 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Preliminary Version: V0.28 Document No.: ILI9325DS_V0.28.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096

9601 TO 220

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

ILI9328

Abstract: st g315 diode wd lcd wd 969 ir
Contextual Info: ILI9328 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Version: V0.1 Document No.: ILI9328DS_V0.1.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096

ILI9325

Abstract: ILI9325DS ILI9325D ILI ILITEK ILI9325 240RGBx320 a-Si 262K color TFT ILItek wd 969 ir HD 4480 LCD rm1 4607 circuit diagram ili9325ds_v0.35
Contextual Info: ILI9325 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Preliminary Version: V0.35 Document No.: ILI9325DS_V0.35.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096

350 pf variable capacitor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

TDK Ferrite Balun

Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

NEC 09030

Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
Contextual Info: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

mrfe6vp61k25h

Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

TRANSISTOR A331

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

TRANSISTOR A331

Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

capacitor 104 Z5

Abstract: resistor A331 TRANSISTOR A331 A153 A331 DCS1800 MRF6404 motorola 572 transistor 150 watts power amplifier layout ATC 100A
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

LQW18AN4R7NG00

Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
Contextual Info: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0

37281

Abstract: TRANSISTOR A331 transistor 31C resistor A331 A153 A331 DCS1800 MRF6404
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

08051J5R6BBT

Abstract: j452 cms 920
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage