C05 JJ Search Results

Contextual Info: NM 24C03/C05/C09/C17 2K -/4K -/8K -/16K -B it Serial EEPROM with Write Protect l2C Synchronous 2-Wire Bus General Description Features The NM24C03/C05/C09/C17 devices are 2048/4096/ 8192/16,834 bits, respectively, of CMOS non-volatile elec­ trically erasable memory. These devices conform to all

sc2448

Abstract: SC0512 ODF155C12 ODP125C12 QBR215C0S 2071c KRT 30 obrsc2440 OBR-WC2448
Contextual Info: POWER SOURCE Single, 2ch DC4.5-W O C ri8V/ DC18- 72V Super-small, high efficiency SINGLE-OUTPUT DUAL-OUTPUT OBR-S C SERIES OBR-WC SERIES w iim in iv 1 yearn ★ Û & H -S Û Q 5 Û C 5 V Mwie) O6Î105&C05 06R12SCÙS Inouï (D C 1 £ V M udd OE3RO&5C12

mn1400

Abstract: C05 jj MN14822 panasonic tv diagram tc-20 MN1480 MN14823 MN14826 PORT23
Contextual Info: M N 1 4 8 2 3 / M N 1 4 8 2 6 M N 1 4 8 0 C M O S 4 f c' y> • Series 1 f - y y « 7 >f ? |ftS0iJ-2J □ □ fc° H - ? C M O S 4 - B i t S in g le - C h ip M ic r o c o m p u te r s fo r F r e q u e n c y S y n t h e s iz e r T V T u n in g S y s t e m s

Contextual Info: f ì j PERICOM PI5C3401 6-Bit, 3-Port Bus Switch I in in in in in in in in in in in in in in in il in in in in in in in in in in in in in in in in in in in in in in in in in in in in I Product Features: • • • • Nero propagation delay 5£2 switches connect inputs to outputs

MN1435

Abstract: MN1405 mn1421 MN1455 ms 14531 MN1400 MN1430 MN1404 MN1403 MN 1404
Contextual Info: PANASONIC INDL/ELEK -CICJ 7S dF | bT32flSE 0G0S7D0 1 M N1400 Family — 1 MN 1455/A M N 1450 Series ^ p - r o n z iy ^ z L - ? (4 -B it) 6932852 PANASONIC M N 1 4 5 5 / A ( M N l « s t ÿ - f y CM OS 72C I NDLtELECTRONI C 4 t'-y h 4 5 0 • V î'V 05700

1C07

Abstract: plj1 ATT ORCA fpga architecture ATT ORCA fpga HC s304 1C09 ic all pics IC PIN CONFIGURATION OF 74 47 1C03 1C05
Contextual Info: AT&T Data Sheet March 1995 ' Microelectronics Optimized Reconfigurable Cell Array {ORCA 1C Series Field-Programmable Gate Arrays ATT1C03, ATT1C05, ATT1C07, and ATT1C09) Features • High density: to 11,400 usable gates ■ High I/O: up to 256 usable I/O (forATT1C09)

1C05

Abstract: ATT ORCA fpga architecture PX110 1C09 2843B C05 jj MXM pin assignment 1C03 1C07 PBD 1.27
Contextual Info: AT&T Data Sheet March 1995 ' Microelectronics Optimized Reconfigurable Cell Array {ORCA 1C Series Field-Programmable Gate Arrays ATT1C03, ATT1C05, ATT1C07, and ATT1C09) Features • High density: to 11,400 usable gates ■ High I/O: up to 256 usable I/O (forATT1C09)

28C08

Abstract: MN1451B MN1400 MN1455B mn1455 MN1450 455B SB 7AA FRB D03
Contextual Info: M N 1 4 5 5 B M N 1 4 5 0 B S e r i e s \ft m M\ c m o s 4t-y h CMOS 4 -B it Single-Chip Microcomputer with F L T Drive Capability r - v 9 - / 9 -o < / • ft ■ á f f iT ííc ííI ii/'P in A ssignm ent 9 MN1455B l±, CMOS •?•{ T iS tS /P lf £ 4 «

MARKING S24c

Abstract: S05C tvs diode marking code fo S-24C
Contextual Info: P_ SMS05C i^ Q P IW JJPy IX P O I- l S e ptem ber 17, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24C T E L 8 0 5 -4 9 8 -2 1 11 F A X :805-498-3804 W E B :http://w w w .sem tech.com DESCRIPTION FEATURES The SM S series of TVS arrays are designed to protect

2SA1292

Abstract: 2SC3256 W3110
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1292 Silicon PNP P o w er Transistors DESCRIPTION • With TO-3PN package • Low saturation voltage. • Fast switching time. • Complément to type 2SC3256 APPLICATIONS • Various inductance, lamp drivers for

MN1400

Abstract: BI329 c0226 d0339 BT35F
Contextual Info: PANASONIC IND L/ELEK -CIO 75 ? - r 7 D C D > ^ Z L ~ 5 ^ 4 - B PË~| b^BflSE D D O S T m MN1400 Family—3 M N 14823/14826(MN 1480 Series _ i t ) 72C 05741 6 9 3 2 8 5 2 PANASONIC IN D L*ELECTR O N IC N 1 4 8 2 3 /M M 4 N 1 4 8 2 6 (M N 1 4 8 0

N4078

Abstract: 1N40 cg5002 ctm hs 740
Contextual Info: MICROSEMI CORP HSE D • bllSflbS OGOlGHfl 4 1N4057 thru 1N4085A MicrosemiCorp. SANTA ANA, CA 1 "7*// ¡5 SCOTTSDALE, A Z F or m ore inform ation call: 602 941-6300 FEATURES HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES « ZENER VOLTAGE 12.4V to 200V

Contextual Info: Data Sheet — A IK T M arch1995 I p E le c tr o n ic s Optimized Reconfigurable Cell Array {ORCA 1C Series Field-Programmable Gate Arrays ATT1C03, ATT1C05, ATT1C07, and ATT1C09) Features • High density: to 11,400 usable gates ■ High I/O: up to 256 usable I/O (forATT1C09)

DIN 16901 130 plastic

Abstract: DIN 16901 150 DIN 16901 130 A6211 V42254-A6109-L1 DIN 16901 110 2G109 ng 52 5-1393561-6 a6210
Contextual Info: 2 c/i tf> •_ Xi « O O Ç It pc,—-C6'C ÌA -c W» £o° -55 «.%-o.gI IeS ISc«« S «« t C Ï o <tB 2 Ï * • £«uo c » w.£ s re u^< -Cû CEr — > .5 D C <q ^ JjT £ O -O w w C M Û ft « #0« W»Ä fflü t WÈ Cy ? «» 5s S C 3? ".S OS ^8g«o.2° «Oc

32C05

Abstract: correlator HSP45256 HSP45256GC-25 HSP45256GC-33 HSP45256JC-25 HSP45256JC-33 HSP45256JI-25 HSP45256JI-33
Contextual Info: HSP45256 D a ta s h e e t May 1999 File Num ber Binary Correlator Features T he H arris H S P 4 52 56 is a high-speed, 2 5 6 tap b ina ry • R e con figura ble 2 5 6 Stage B in ary C o rrela to r correlator. It can be con fig u re d to perform on e -d im e n sio n a l

Contextual Info: 1.5 PowerPC 604 Microprocessor Pinout Listings The follow ing sections contain the pinout listings for the 604 C4-CQFP and BGA packages. 1.5.1 Pinout Listing for the C4-CQFP Package Table 9 provides the pinout listing for the 6 0 4 C 4 -C Q F P package. Table 9. Pinout Listing for the C4-CQFP Package

22J 160

Contextual Info: Technische Information / technical information BSM400GA120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

transistor c203

Abstract: bc 201 transistor transistor BC 176 bc 1602 l transistor BC 172 TRANSISTOR BC 203 transistor BC201 transistor bc 201 1602 siemens TRANSISTOR BC 173
Contextual Info: »•a i" 2SC D ■ 0235bDS 0 0 0 4 1 2 b PNP Silicon Transistors SIEMENS 1 WÊ S I Z G j - - 25C 04126 D “T * AKTIENGESELLSCHAF BC201 — BC203 BC 201, BC 202, and BC 203 are epitaxial PNP silicon planar transistors of miniature design in U 32 plastic package. The types are marked by a green BC 201 , blue (BC 202), and

pa 2030a

Abstract: 25CC 2SA1622 FC103 2018Al IC 7443
Contextual Info: SANYO SEMICONDUCTOR CORP 7^ 7 0 7 1 3 22E » 0QG7443 h T~ 21 'Oc{ FC103 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3111 F e a tu re s • Com posite type w ith 2 tran sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e

BSM400GA120DLC

Abstract: 6c01
Contextual Info: Technische Information / technical information BSM400GA120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

74ACT11882

Abstract: APLUS 54ACT11881 54ACT11882 74ACT11881 D3480
Contextual Info: 54ACT11881, 74ACT11881 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS D3480, MARCH 1990 S4ACT11881 . . . JT OR JW PACKAGE 74ACT11881 . . DW OR NT PACKAGE TOP VIEW Inputs are TTL-Voltage C om patible Full Look-A head fo r High-Speed O perations on Long W ords

P-51

Contextual Info: 1 5 P- Peripheral 8051 System on a Chip P-51 Features All 8051/52 resources: EISA/PC-104 interface: ! ! ! ! ! ! ! ! VDD P1.7 P1.6 P1.5 P1.4 P1.3 P1.2 P1.1 P1.0 BCLK RFRSH GND GND GND IRQ15 IRQ14 IRQ12 IRQ11 IRQ10 IRQ9 IRQ7 IRQ6 IRQ5 IRQ4 IRQ3 45 EISA signals supported.

Contextual Info: 13 CKT SIZE 3 X 5 12 10 DIM A DIM B DIM D .54 13.8 .71 (18.0) .87 (22.2) .331 (8.4 0) .49 6 (12.60) .661 (16.80) .49 (12.5) .50 (12.8) .50 (12.8) 1 IX ffl R- 1 SHOWN DRAIN HOLES O PT IO NAL - / m J-L. -D IM NOTES: 1. MATERIALS: HOUSING: " 2 2 5 " = N Y L 0 N (PA6), U L 9 4 V - 0 , COLOR: BLACK, IEC 6 0 3 3 5 - 1 ,

AES01263

Abstract: AEA01261 AES01264 Q67006-A9171 VX145
Contextual Info: SIEMENS Dynamic Differential Hall Effect Sensor 1C TLE 4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible