C02U Search Results

Contextual Info: SILIC O N HIGH VO LT A G E R EC T IFY IN G DIODES MD-12N H 10 • i a SflE J> m ORIGIN ELECTRIC CO LT» • Ît f i: I . • 12kV è < 7 ' < =7 L X ^ 2 . •E û t i (H ^ -ry ) . < n m m „ 2. C02U-• Æ fê (T a = 2 5 t ) C h a ra c te ristic s(T a = 2 5 °C ,

Contextual Info: 10 SIGNAL .00 2.00 • 25 2.25 -JV ROW = 1*1 — 3.50 A ■ 15.75 3& V ■ m 0*0 ROW -V SH IE LD COLUMN H 00.5 6 ± 0 . 0 5 PTH 0 0 . GS D R I L L 0 1.00 P AD 2.00 0 0 . 10 - 2.00 SIGNAL COLUMN 2.25 " - [ B ] -SHIELD NOTES: BACKPLANE HOLE PA TTER N

UCD224

Abstract: transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309
Contextual Info: GOEHOST Philips Sem iconductors E33 IAPX N-channel silicon field-effect transistors N a piE R Prelim inary specification PM B FJ308/309/310 P H IL IP S /D IS C R E T E b7E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

g28V

Abstract: electronic oven control a310v
Contextual Info: Chassis Mount HF Oven Controlled Crystal Oscillators See pages 56, 58 for smaller size HF models. HIGH STABII ITY Ho * in -ri.iyl ! i‘.'phcr :cr',perniine ulrMny Most economical CO-211 S E R IE S CO-218S S E R IE S A T C u t C ry sta l (S C /IT C u t C ry sta l)