BC807-25
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SLKOR
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BC807W
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-323 package with -50 V collector-base voltage, -45 V collector-emitter voltage, -500 mA collector current, 200 mW power dissipation, and DC current gain ranging from 100 to 600 depending on rank. |
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BC807-25(RANGE:160-400)
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JCET Group
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PNP transistor in SOT-23 package with -45 V collector-emitter voltage, -0.5 A continuous collector current, 0.3 W power dissipation, and DC current gain ranging from 100 to 600 depending on rank. |
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BC807-16(RANGE:100-250)
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JCET Group
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BC807 PNP transistor in SOT-23 package, featuring 45 V collector-emitter breakdown voltage, -500 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 600 depending on rank. |
Original |
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BC807-40(RANGE:250-600)
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JCET Group
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BC807 PNP transistor in SOT-23 package, with -50 V collector-base voltage, -45 V collector-emitter voltage, -0.5 A continuous collector current, 0.3 W power dissipation, and DC current gain ranging from 100 to 600. |
Original |
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BC807-40
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SLKOR
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Original |
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BC807
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AK Semiconductor
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PNP transistor in SOT-23 package with -50 V collector-base voltage, -45 V collector-emitter voltage, -0.5 A continuous collector current, 0.3 W power dissipation, and DC current gain (hFE) ranging from 100 to 630 depending on variant. |
Original |
PDF
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BC807
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-23 package with -50 V collector-base voltage, -45 V collector-emitter voltage, -500 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 600 depending on rank. |
Original |
PDF
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BC807(RANGE:100-250)
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JCET Group
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BC807 PNP transistor in SOT-23 package with 45 V collector-emitter breakdown voltage, 500 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 600. |
Original |
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BC807
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Microdiode Semiconductor
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SOT-23, Plastic-Encapsulate, Transistor (PNP), 1.BASE, 2.EMITTER, 3.COLLECTOR |
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BC807W
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JCET Group
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PNP transistor in SOT-323 package with -50 V collector-base voltage, -45 V collector-emitter voltage, -0.5 A continuous collector current, 0.2 W power dissipation, and DC current gain ranging from 100 to 600 depending on rank. |
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BC807-40
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Shikues Semiconductor
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VCBO: -50V, VCEO: -45V, VEBO: -5V, IC: -0.5A, PC: 0.3W, Tj: 150°C, Tstg: -55-150°C. |
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BC807-25
