KBPC3508W
|
|
SUNMATE electronic Co., LTD
|
Single-phase silicon bridge rectifier KBPC35005W-KBPC3510W with 35A average forward current, 50 to 1000V repetitive peak reverse voltage, glass passivated die, epoxy isolated case, and mounting hole for #10 screw. |
Original |
PDF
|
|
|
|
KBPC3508W
|
|
Microdiode Semiconductor (MDD)
|
Silicon bridge rectifiers, reverse voltage 50 to 1000 volts, forward current 35.0 amperes. |
Original |
PDF
|
|
|
|
KBPC3508
|
|
SUNMATE electronic Co., LTD
|
35A single-phase silicon bridge rectifier with voltage ratings from 50 to 1000V, designed for high efficiency and low power loss, featuring isolated epoxy case, glass passivated die, and thermal protection up to 150C operating junction temperature.Single-phase silicon bridge rectifier KBPC35005-KBPC3510 with 35A average forward current, voltage range 50-1000V, isolated epoxy case, and mounting hole for #8 screw, designed for high efficiency and low power loss in resistive or inductive loads.Single phase silicon bridge rectifier KBPC35005-KBPC3510 with 35 A average forward current, 50 to 1000 V peak reverse voltage, mounted on aluminum plate, rated for high efficiency and low power loss.Single-phase silicon bridge rectifier KBPC35005-KBPC3510 with 35A average forward current, 50-1000V reverse voltage range, mounted on aluminum plate, featuring low power loss and electrically isolated epoxy case.35 A single-phase silicon bridge rectifier with voltage ratings from 50 to 1000 V, featuring 1.1 V maximum forward voltage drop per element at 17.5 A and isolation from case to leads.Single-phase silicon bridge rectifier KBPC35005-KBPC3510 with 35A average forward current, 50 to 1000V repetitive peak reverse voltage, isolated epoxy case, and mounting for heatsink with thermal compound.Single-phase silicon bridge rectifier KBPC35005-KBPC3510 with 35A average forward current, 50 to 1000V repetitive peak reverse voltage, isolated epoxy case, and mounting hole for #8 screw. |
Original |
PDF
|
|
|
|
GBPC3508
|
|
Shenzhen Heketai Electronics Co Ltd
|
35A glass passivated bridge rectifier with peak repetitive reverse voltage from 50V to 1000V, average rectified output current of 35A at 50°C, non-repetitive surge current up to 400A, and operating temperature range from -65°C to +150°C.35A glass passivated bridge rectifier with peak repetitive reverse voltage from 50V to 1000V, 400A non-repetitive surge current, 1.1V forward voltage per element, and operating temperature from -65°C to +150°C.35A glass passivated bridge rectifier with peak repetitive reverse voltage from 50 to 1000V, average rectified output current of 35A at 50°C, non-repetitive surge current up to 400A, and forward voltage of 1.1V per element at 17.5A.35A glass passivated bridge rectifier with peak repetitive reverse voltage from 50 to 1000V, average rectified output current of 35A at 50°C, non-repetitive surge current up to 400A, and operating temperature range from -65 to +150°C.35A glass passivated bridge rectifier with 400A peak surge current, available with wire leads or Faston terminals, rated for working reverse voltages from 50V to 1000V and operating temperature range of -65 to +150°C. |
Original |
PDF
|
|
|
|
KBPC3508
|
|
Microdiode Semiconductor (MDD)
|
Silicon bridge rectifiers, reverse voltage 50 to 1000 volts, forward current 35.0 amperes. |
Original |
PDF
|
|
|
KBPC3508W
