C B T8E Search Results

NM6403

Abstract: NM6404 K034 NM1281 3AA3 M16-S PC3Y
Contextual Info: K O M ilb lO T E P H M H H H 4 0 P M A I1 H 0 H H M TEXHM KA B. K a u iK a p o B 30<PEKTHBHA5I PEATIH3AUM5I 'MJlbTPOB-C! M b i y>Ke p a c c K a 3 b iB a n H 0 6 OTenecTBeHHOM n p o M e c c o p H O M N M C , p a A n n a o 6 p a 3p 6 « A p e 60 a oTK M T a ic x c e A n «

82092AA

Contextual Info: intei B2092AA 4.0 ELECTRICAL CHARACTERISTICS 4.1 Maximum Ratings Case Tem perature Under B ia s . . . 65°C to + 110°C Storage Tem perature . - 65°C to + 150°C Supply Voltages with Respect to Ground . . . - 0 .5 V to V c c + 0-5V Voltage On Any P in .- 0.5V to V c c + 0-5V

IGT4E10

Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
Contextual Info: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s

TN-58-11

Contextual Info: ADVANCE |U |lt= R O N 256K M T 58 L C 2 5 6 K 1 6/18E1 16/18 S Y N C B U R S T SRAM X 256Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • • •

ET401

Contextual Info: ET401 TRIPLE DIFFUSED PLANER TYPE NP HIGH VOLTAGE, HIGH SPEED SWITCHING B if f i, f è & Z + y f - y f m : Outline Drawings 55 c Features • iftiW r± ,& & Z' 'y?->7 • High voltage, high speed switching Low saturation voltage • ¡ftffflS it High Reliability

KC156A

Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:

2SC1947

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 1 9 4 7 is a silic o n N P N epitaxial planar typ e tra n sisto r designed Dimensions in mm f o r ind u stria l use R F p o w e r am p lifiers on V H F band m o b ile radio

Contextual Info: ;T8E NOTES 1. REEL 00 K ts T T S o IN THE PACKAGE,ACTUATOR OF PART N0.52559-* 19 IHOULD BE LOCKED RE DETAILED DIMENSIONS,SEE SD-52559-027 .o — 2, 1 O O O j S / U — IE NUMBER OF CONNECTORS: I000PC S/R EEL 5, ' - / - 00 •Ql U— LEAD TAPE LENGTH C\l

2SC2056

Abstract: RF NPN POWER TRANSISTOR 7 WATT 175MHZ TO-39 c b t8e BH Rf transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band portable or hand-held radio applications. D im e n sio n s in m m

GDFG

Contextual Info: 97/.07,0 <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHWXUKV W W W W W jft IM?J9>?D= 97F78?B?JO {;7LO BE7: KF JE mhff3t -vu 9E?B J;HC?D7BIb ?:;7B <EH >;7LO :KJO BE7: -B7IJ?9 I;7B;: 7D: :KIJ FJEJ;9J;: JOF;I 7L7?B78B; jA3 :?;B;9JH?9 IJH;D=J> `8;JM;D 9E?B 7D: 9EDJ79JIa W 2~ ?DIKB7J?ED IOIJ;Cp vB7II y 7L7?B78B;

HB 541

Contextual Info: 97/.07,0 <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHWXUKV W W W W W W jft IM?J9>?D= 97F78?B?JO {;7LO BE7: KF JE mhff3t -vu 9E?B J;HC?D7BIb ?:;7B <EH >;7LO :KJO BE7: 47I> J?=>J 7D: :KIJ FJEJ;9J;: JOF;I 7L7?B78B; vB7II y ?DIKB7J?ED 7L7?B78B; jA3 :?;B;9JH?9 IJH;D=J> `8;JM;D 9E?B 7D: 9EDJ79JIa

GDFG

Abstract: HDKJ A67A yb 0d
Contextual Info: :8/.18,0 =;>;3CDA7 :;9: @?F7A A7<3G 8LIWXULV y?B; +Edpxgijkgm W jft IM?J9>?D= 97F78?B?JO W {;7LO BE7: KF JE mbhff3t E 6 7 W -vu 9E?B J;HC?D7BIb ?:;7B <EH >;7LO :KJO BE7: y?B; +Edpjffhkkgn `wv JOF;a W -B7IJ?9 I;7B;: 7D: :KIJ FHEJ;9J;: JOF;I 7L7?B78B; W 2~ ?DIKB7J?ED IOIJ;Cp vB7II y 7L7?B78B;

82092AA

Abstract: L2228 S82092AA 51FFH
Contextual Info: Â Ë J m N l ! O G « F § » Ä T O M in te i 82092AA PCI TO PCMCIA/ENHANCED-IDE CONTROLLER Dual V o lta g e O p e ra tio n — E ach P C M C IA S o c k e t A u to m atica lly C o n fig u re s to S u p p o rt E ith e r 3.3 V or 5 .0 V PC C ard s P ro v id e s th e U ltim ate Plug and Play

rl5c467

Abstract: 72 jqc ACAD25 82365SL PC97 RL5C476A rl5c46 LQFP-208PIN
Contextual Info: RL5C476A PCI-CARDBUS BRIDGE DA TA SHEET \ _ J 1 O v e r v ie w The RL5C476A is a PC card controller offering a single chip solution as a bridge between PCI bus and CardBus. The RL5C476A includes two PC Card 95 compliant sockets interface and a bridge

LP 8029 l2

Contextual Info: Data Sheet MARCH 1999 Revision 1.2 LXT970A Dual-Speed Fast Ethernet Transceiver General Description Features The LXT970A is an enhanced derivative of the LXT970 10/100 Mbps Fast Ethernet PHY Transceiver that supports selectable driver strength capabilities and link-loss criteria.

K 2056 transistor

Abstract: transistor K 2056 transistor T K 2056
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 SC 2056 is a silicon N PN epitaxial planar type transistor designed for R F power amplifiers in V H F band portable or hand-held radio applications. D im e nsions in mm

82092AA

Abstract: LT 5316 29051 82365SL PCMCIA 51FFH
Contextual Info: ÄQWANGB 0[M[F [SöüDÄTD®[ffl in te i 82092AA PCI TO PCMCIA/ENHANCED-IDE CONTROLLER Provides the Ultimate Plug and Play Solution for High Performance PCI Desktop Systems — Supports Combinations of PCMCIA and Enhanced Local Bus IDE Interfaces — Contains a 32-bit PCI Local Bus

Contextual Info: RL5C478A PCI-CARDBUS BRIDGE DATA SHEET 1 O v e r v ie w The RL5C478A/RB5C478A is a PC card controller offering a single chip solution as a bridge between PCI bus and CardBus. The RL5C478A/RB5C478A includes two PC Card 95 compliant sockets interface and a bridge function to the PCI bus of 33Mhz. The RL5C478A/RB5C478A can

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED

T3D 67 diode

Abstract: T3D 34 diode Diode T3D 57 T3D 77 t5d diode GPIO Interface card T3D 43 diode T3D 46 diode T3D 64 T3D 71 diode
Contextual Info: 12345 RL5C476A Version 1.4 May. 13,1998 PCI-CARDBUS BRIDGE DATA SHEET 1 OVERVIEW The RL5C476A is a PC card controller offering a single chip solution as a bridge between PCI bus and CardBus. The RL5C476A includes two PC Card 95 compliant sockets interface and a bridge

ETK81-050

Abstract: B-26 M102 T151
Contextual Info: ETK81-O5O 50a S ± /'7 — ¡V POWER TRANSISTOR MODULE Features 7 • • ;- * * y • hFE/P'Bjv.' • *- fa r Including Free Wheeling Diode High DC Current Gain Insulated Type | * Applications Power Switching • AC • DC Ç — AC Motor Controls • Uninterruptible Power Supply

ricoh rl5c476

Abstract: THL W8 T3D 34 diode I82365 RB5C478 RL5C478 Diode T3D 54 i82365SL T3D 46 diode t3d 62 diode
Contextual Info: 12345 RL5C478A Version 2.0 Jan. 13,1998 PCI-CARDBUS BRIDGE DATA SHEET 1 OVERVIEW The RL5C478A/RB5C478A is a PC card controller offering a single chip solution as a bridge between PCI bus and CardBus. The RL5C478A/RB5C478A includes two PC Card 95 compliant

2SC2131

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2131 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES

LS195A

Contextual Info: M MOTOROLA M ilitary 54LS 195A 4 -B it Parallel-A ccess S h ift R egister ELECTRICALLY TESTED PER: M IL-M -38510/30602 The 54LS195A is a high-speed 4-B it S h ift R egister o ffe rin g ty p ic a l s h ift fre q u en cies o f 39 MMz. It is useful fo r a w id e v a rie ty o f re giste r and