C 879 TRANSISTOR Search Results

c 879 transistor

Abstract: darlington bd 876 bd 879 transistor BD 468 S BO-87 877 transistor
Contextual Info: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 8 7 9 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 4 1 8 6 9 , sheet 4 . These darlington transistors

Contextual Info: □RE D • bbS3^31 □D27bD2 SID H A P X BC875 BC877 BC879 N AUER PHILIPS/DISCRETE SM ALL-SIGNAL DARLINGTON TRANSISTORS NPN epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope with an integrated diode and resistor. They can be used for general purpose low frequency applications and as relay drivers etc.

G200

Abstract: 894 transistor 5r1 resistor
Contextual Info: PTF 10195 125 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description • • The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold

UC3843 step down converter

Abstract: UC3843 sepic step up converter ,UC3843 step up converter uc3843 step up TL494 step up uc3843 step down TL494 step down UC3843 step up converter TL494 AC-DC CONVERTER UC3843 sepic converter
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 6 http://onsemi.com 7 ON Semiconductor Switching Controllers Selection Tables AC−DC/Isolated Switching PFC/PWM Combo Page 14 Power Factor Correction (Page 15) Flyback (Low Power) Forward (Low Power) Half−Bridge

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 979 378-2022 (212)227FAX: (879) 3784880 2N 6083 NPN SILICON RF POWER TRANSISTORS •MAXIMUM RATINGS . . . designed (or 12.5 Voll VHP large-signal power amplifier applications required in military and industrial equipment operating to

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

Contextual Info: DTC114GU/DTC114GK/DTC114GS/DTC114GF DTC114GL/DTC114GA/DTC114GV DTC114GU/DTC114GK/DTC114GS/DTC114GF DTC114GL/DTC114GA/DTC114GV N : 7 > N ~7 > *r V; V 'J ' t - 7 ^/Transistor Switch Digital Transistors Includes Resistors • 41-JI2\f';±ll// Dimensions (Unit: mm)

lt326

Abstract: 2SD1845
Contextual Info: Power Transistors 2S D 18 45 2SD1845 Silicon N PN Triple-D iffused P lanar Type Package Dim ensions Horizontal Deflection Output • Features • D am per diode built-in • Minimizes external com ponent counts and simplifies circuitry • High breakdow n voltage, high reliability

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

c 879 transistor

Abstract: MPS-2926 stu 407 MPS2926 100-C
Contextual Info: MPS2926 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . . . designed for use in amplifier applications. • Collector-Emitter Breakdown Voltage — B V q e o = 18 Vd c • Small-Signal Current Gain — hfe •35-470 M A X IM U M R A T IN G S

tip146

Abstract: philips TIP147 tip147
Contextual Info: TIP145 TIP146 TIP147 PHILIPS INTERNATIONAL SbE D • VllOfiSb D043St12 7Ö3 H P H I N 1 - 3 3 “ 3 I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. N-P-N complements are TIP140, TIP141

Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • BCW67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 65, BCW 66 NPN Type BCW BCW BCW BCW BCW BCW 67 67 67 68 68 68 A B C F G H Marking

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

c 879 transistor

Contextual Info: Philips Semiconductors Product specification RowerMOS transistor Logic level FET GENERAL DESCRIPTION BUK565-100A QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

bsy34

Contextual Info: 2SC D • 023SbüS 0DG4Ô31 G « S I E G T -lS -tf N P N Silicon Planar Transistors BSY34 - SIEMENS AKTIEN6E SE LL SC HA F BSY58 BSY 34 and BSY 58 are double diffused epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41 873 . The collectors are electrically connected to the cases.

philips TIP147

Abstract: TLP147 TIP146 TIP140 TIP141 TIP142 TIP145 TIP147 darlington TIP142 power amplifier 111SL
Contextual Info: _ J SbE J> PHILIPS INTERNATIONAL m TIP145 TIP146 TIP147_ ^ VllOBSb 00435^2 7Û3 • PHIN T - 3 3 - 31 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general

NDB7051

Abstract: NDP7051
Contextual Info: M ay 1996 National Semiconductor " NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

2SD111

Abstract: 2SD110 2SD1100 D-111 transistor 2SD110-0 2SD110-Y 2sd1102 sd111
Contextual Info: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR 23D y+ s*n O O do - D O ay^ -iS 1 Is I i ffl o * * *• v-tm A ud io Power A m p li f ie r , Power S w itc h in g DC - DC C o n v e rte r and R e g u la t o r A p p l i c a t i o n * , • • • = a is ? K W E -e -f

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> bb53^31 D O Sm ^Q ^12 IAPX BLW 90 Jl U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f, range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

4093 N

Abstract: 4093 4093 be 4091 d 4093 Vgsoff -6V 4092 40921 esm 4092 ESM4091
Contextual Info: *ESM 4091 *ESM 4092 *ESM 4093 FIELD-EFFECT TRANSISTORS, SILICON, N CHANNEL T R A N S IS T O R S A E F F E T D E C H AM P, S IL IC IU M , C A N A L N % Preferred device D isp o sitif recommandé Fast switching C o m m u ta tio n rapide Chopper 30 mA 15 mA 8 mA

esm118

Abstract: ESM117 esm 117 DARLINGTON ESM 30 Darlington npn boitier to3 CM1111
Contextual Info: ESM 117 ESM 118 NPN SILICON DARLING TON TRANSISTORS, E P ITA XIAL BASE TRANSISTORS D ARLING TON NPN SILIC IU M , BASE EPITAXIEE Compì, o f ESM 161, ESM 162 PRE LIM IN A R Y D ATA NOTICE P R E LIM IN AIR E M onolithic construction Construction monolithique

2N3055

Abstract: 2N3773 2SB766 2SB767 2SB772 2SB775 2SD867 2N3773 transistor
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TFK 227

Abstract: BF255 BF254 tfk 226 bf254 tfk BF 225 tfk 4 227 tfk u 226 b TFK 877 TFK 4 232
Contextual Info: W BF 254 • BF 255 Silizium-NPN-Epitaxial-Planar-HF-Transistoren Silicon NPN Epitaxial Planar RF Transistors Anwendungen: BF 254: Allgem ein und geregelte H F-Verstärkerstufen bis 100 MHz BF 255: Allgem ein und HF-Verstärkerstufen bis 100 MHz Applications: