C 547 TRANSISTOR Search Results

CA5470H

Contextual Info: HARRIS SEMICOND 4302571 4 0 E T> SECTOR fSl H A R R I S OOBlflâfl 1 IHAS CA5470 Quad Microprocessor BiMOS-E Operational Amplifiers With MOSFET Input/Bipolar Output August 1991 Features Description • High-Speed CMOS Input Stage Provides The C A 547 0 series are integrated circuit operational

2SC547

Abstract: A9 npn sumida backlight inverter
Contextual Info: 2 s c 547 O " ^U jyN P N X ^9 ^ P l/7 L y - t B h ^ y ^ ^ ^ SILICON NPN EPITAXIAL PLANAR TRANSISTOR VHP S i J i g i K f f l æ it X m m INDUSTRIAL APPLICATIONS O O ÜS VHF Power A m p l i f i e r s , F r e q u e n c y M u l t i p l i e r U n it: and H. F Hi gh Power D r i v e r s A p p l i c a t i o n s

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

IDG 600

Abstract: STMicroelectronics Krypton ST952 ST75951 ST952TQF7 TQFP32 "caller ID" "type 2" hybrid VTAC 4 BC 547 PIN DIAGRAM
Contextual Info: ST952 D.A.A. LINE INTERFACE TQFP32 7 x 7 x 1.4mm (Thin Plastic Quad Flat Pack) ORDER CODE : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hook state, ST952 DC voltage, 4V at a 20mA

Amplifier with transistor BC549

Abstract: BC546 BC549 BC550 BC556 BC560 bc549 noise figure bc556 transistor npn transistor of bc548 Transistor B C 458
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Amplifier • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc546 fairchild

Abstract: transistor BC549 hfe of transistor BC548 Transistor BC546/547/548/549/550 BC549 input for bc548 npn transistor NPN transistor bc548 BC546 BC549 BC550
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

C 547 B pin configuration

Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
Contextual Info: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max

transistor bc546

Abstract: bc546 fairchild data of transistor 547 transistor C 548 B Amplifier with transistor BC548 Amplifier with transistor BC549 BC550 TRANSISTOR bc560 BC546..547 bc550 transistor
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC546, VCEO=65V • LOW NOISE: BC549, BC550 • Complement to BC556 . BC560 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Base Voltage

bc550

Abstract: bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

bc549

Abstract: transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn bc548 fairchild Amplifier with transistor BC549 TO92-3 Package Dimensions transistor BC 548 Data
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

tmc koa

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-235 AHA 12/20/01 Chip Tantalum Solid Electrolytic Capacitor Type TMC - 0603 CERTIFIED 1. General 1-1 Scope of Application This document applies to miniaturized chip tantalum solid electrolytic capacitors for applications in transistorized circuits of electronic devices.

transistor BC 458

Abstract: BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

APPLICATION OF BC548 transistor

Abstract: Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor BC548CTA transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor bf 422 NPN

Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .

SD1228

Abstract: D1860
Contextual Info: h "7 > y 7 , $ /T ra n sisto rs 2SD1228M/2SD1860 2 SD 1228 M O C n iflA O lo O U yU^> 7 h P ow er Amp. Eptaxial Planar NPN S ilico n Transistors • • 1 V CE sa t ) tf% . < im S M .% , > '/ X $ T riill/D im e n s io n s (U n it: mm) V * X < Ltl'S o 90mV at lc = 150mA

transistor KIA-70

Abstract: transistor C 547 transistor equivalent
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR BA1 L4L The BA1L4L is designed for use in medium speed switching circuit. FEATURE • Bias resistors built-in type NPN transistor equivalent circuit. iC Rt = 47 k SI R2 = 22 ki2 ABSOLUTE M A X IM U M RATINGS Maximum Temperatures

Contextual Info: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

2SC1164

Abstract: 2sc1164 O 2sc1164 transistor OS13 transistor NPN 547
Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR O CA TT J t üSI t ü^^Æ o VHy o H ig h Power A m p l i f i e r f o r asc 1164 a u H F * i6 7f-x * tiJ ;fJ i& /8 CATV A p p l i c a t i o n s mg», « s s a s f s i ' t i i t v ' i t o Band a nd H igh J a i n f o r

HIGH POWER DIODE

Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
Contextual Info: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor

Contextual Info: MOTOROLA Order this document by MHW6205/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW6205 MHW6225 High Output Power Doubler 550 MHz CATV Amplifiers Designed specifically for 550 MHz CATV applications. Features ion–implanted, arsenic emitter transistors with an all gold metallization system.

ir igbt 1200V 40A

Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
Contextual Info: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package

JE2955

Abstract: MJE2955 mje2955 data JE2955K MJE3055K mje3055 MJE2955K transistor MJE3055 mje3055 data SAA 1283
Contextual Info: MJE2955 SILICON MJE2955K HIGH POWER PNP SILICON TRANSISTORS 10 AMPERE POWER TRANSISTORS PNP SILICON . . . designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current-Gain — Bandwidth Product — f j = 2.0 M H Z (Min)

mosfet 1200V 40A

Abstract: MOSFET 40A 600V ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V 4772 mosfet driver Diode 1200V 40A IGBT 600V 40A IGBT 600V 40A diode
Contextual Info: PROVISIONAL PD - 94240 IRGPS40B120UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA

PUT 2N6027

Abstract: PUT 2N6027/2N6028 equivalent transistor of 2n6027 2N6027-2N6028 N6028 UNITRODE U-66 PUT 2N6028 unijunction application note 2N6027 PUT specifications PUT Oscillator 2n6027
Contextual Info: PUTs 2N6027-2N6028 Planar, TO-92, Plastic FEATURES DESCR IPTIO N • • • • • • The Unitrode Programmable Unijunction Transistor is today’s preferred device for low cost tim ing circuits, oscillators, sensing circu its and a wide range of other applications