C 547 TRANSISTOR Search Results

Contextual Info: ThalHEW LETT W lH M P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 547 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 547 Series is a thin-film RF bipolar amplifier using lossless

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC546, VCeo= 65V . LOW NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage

transistor vc 548

Abstract: Transistor Bc54
Contextual Info: SyrnSEMi SYM5EMI SEMICONDUCTOR BC 546, A, BC 547 A, BC 548, A, T O -92 B, C B, C B, C Plastic Encapsulate Transistors TRANSISTOR NPN TO — 92 FEATURES Power dissipation (Tamb=25 °C ) PCM : 0.625 W Collector current 1cm : 0.1 A Collector base voltage 1. COLLECTOR

BC547

Abstract: BC547 MOTOROLA transistor BC 547B BC548C MOTOROLA BC546B MOTOROLA BC547 application notes bc 548b transistor BC548 bc546 motorola Datasheet of bc 547 b
Contextual Info: MOTOROLA Order this document by BC546/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC546, B NPN Silicon BC547, A, B, C BC548, A, B, C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 546 BC 547 BC 548 Unit Collector – Emitter Voltage VCEO

Transistor NPN BC556

Abstract: BC557 BC557 SWITCHING TRANSISTOR npn bc557 of transistor bc558 BC557 SWITCHING APPLICATION TRANSISTOR bc556 BC557 application note BC557 TRANSISTOR application of bc557
Contextual Info: SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES For Complementary With NPN Type BC546/547/548. N E K G J D MAXIMUM RATING Ta=25 CHARACTERISTIC SYMBOL RATING UNIT

BC548

Abstract: bc547 bc546c transistor NPN 548 C 547 c bc546 transistor c 548 c BC547 w 2 d BC548 transistor transistor B 548
Contextual Info: ICC TO-92 Plastic-Encapsulate Transistors BC546,B/BC547fA,BfC/BC548,A,B,C TRANSISTOR NPN FEATURES on P cm ; IcM: 0 .6 2 5 W (T a m b = 2 5 ° C ) 0 .1 A WÊmÊ&m voltage V cbo: B C 546 : 80V B C 547 : 50V B C 548 : 30V S iÊ l^M Ê Ê p^àA d.ataraaa junction tem perature range

K/HI-548

Abstract: Hi1-0548
Contextual Info: HI-546, HI-547, HI-548, HI-549 HARRIS S E M I C O N D U C T O R Sin g le 16 and 8, Differential 8-Channel and 4 -Channel CMOS Analog MUXs with Active Overvoltage Protection August 1997 Features Description Analog Overvoltage Protection 70VP P No Channel Interaction During Overvoltage

CA5470H

Contextual Info: HARRIS SEMICOND 4302571 4 0 E T> SECTOR fSl H A R R I S OOBlflâfl 1 IHAS CA5470 Quad Microprocessor BiMOS-E Operational Amplifiers With MOSFET Input/Bipolar Output August 1991 Features Description • High-Speed CMOS Input Stage Provides The C A 547 0 series are integrated circuit operational

2SC547

Abstract: A9 npn sumida backlight inverter
Contextual Info: 2 s c 547 O " ^U jyN P N X ^9 ^ P l/7 L y - t B h ^ y ^ ^ ^ SILICON NPN EPITAXIAL PLANAR TRANSISTOR VHP S i J i g i K f f l æ it X m m INDUSTRIAL APPLICATIONS O O ÜS VHF Power A m p l i f i e r s , F r e q u e n c y M u l t i p l i e r U n it: and H. F Hi gh Power D r i v e r s A p p l i c a t i o n s

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

C 547 C

Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
Contextual Info: BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Application: Pre and d river stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

BC550

Abstract: ic 548 CBC549 C 548 B BC550C BC549B transistors BC 548 BC 558 bc548b bc557 bc547b
Contextual Info: SIEMENS SIE » • ßS3Sfc.05 GG41b0fl 7ST « S I E G S I E M EN S A K T I E N 6 E S E L L S C H A F "F Z ? *-2 ./ NPN Silicon AF Transistors • • • • BC546 BC550 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz

transistor C 548 B

Abstract: TR BC 548 transistor c 548
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VOEo =65V • LOW NOISE: BC549, BC550 • Complement to BCS56 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage

IDG 600

Abstract: STMicroelectronics Krypton ST952 ST75951 ST952TQF7 TQFP32 "caller ID" "type 2" hybrid VTAC 4 BC 547 PIN DIAGRAM
Contextual Info: ST952 D.A.A. LINE INTERFACE TQFP32 7 x 7 x 1.4mm (Thin Plastic Quad Flat Pack) ORDER CODE : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hook state, ST952 DC voltage, 4V at a 20mA

transistor bc 488

Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
Contextual Info: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .

bc546 fairchild

Abstract: transistor BC549 hfe of transistor BC548 Transistor BC546/547/548/549/550 BC549 input for bc548 npn transistor NPN transistor bc548 BC546 BC549 BC550
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

C 547 B pin configuration

Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
Contextual Info: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max

transistor 45 f 122

Abstract: 4n33 and 4n35 4N35 C 547 transistor TRANSISTOR 547 transistor 551 547 TRANSISTOR 4N27W 4N28 4N31
Contextual Info: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0

4n27 opto isolator

Abstract: 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c 340 opto isolator ic 4n26 opto isolator 4n26 4N26
Contextual Info: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0

ic 546

Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b
Contextual Info: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

transistor bc546

Abstract: bc546 fairchild data of transistor 547 transistor C 548 B Amplifier with transistor BC548 Amplifier with transistor BC549 BC550 TRANSISTOR bc560 BC546..547 bc550 transistor
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC546, VCEO=65V • LOW NOISE: BC549, BC550 • Complement to BC556 . BC560 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Base Voltage

bc550

Abstract: bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

4N27W

Abstract: 4N28 4N31 4N35 4N36 4N37 4n33 and 4n35 104N35
Contextual Info: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0

bc549

Abstract: transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn bc548 fairchild Amplifier with transistor BC549 TO92-3 Package Dimensions transistor BC 548 Data
Contextual Info: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted