C 5400 Search Results

IC 7409

Abstract: 7408+IC 7409+IC
Contextual Info: MTTL M C 5400/7400 series Q U A D 2-INPUT " A M D ” G A T E M O TO RO LA [ V M A Y 1971 M C 5 4 0 8 • M C 7408 0 ;U t- M C 5 4 0 9 • M C 7409 004470 W ith O p e n C o lle c to r A d d S u f f i x L f o r T O - 1 1 6 c e r a m ic p a c k a g e 'C a s e 6 3 2 : M C 5 4 Q B 99

Contextual Info: 10 FR % EQ U EN SR C Y F k M H IN z .( kH z) D C R M ES A X. IST (O AN H C M E S) IN C R C EM U R EN R EN TA T L 5% IN C (m R C EM A U ) R E R N EN TA T L 10 % (m A ) TE S C TA N C E U D IN T (m H )± * BE R NU M H Filter Inductors 5400R 5400 DA S Series

Contextual Info: m in 0 cn 53 ♦4 2 MAX CIRCUIT No. C[ö]Sa*-i§-) I o N O TE S 1 . 2| EK fi ± , AMP»iÄ*J!.*&108-5400lwi*-r *> 1. T H E S E P R O D U C T S C O NF OR M AMP S P E C 108-5400, . A A *♦* MATERIAL H0U5INGiTHERMOPLASTEC S H E L L : C A R B O N STEEL C O N T A C T * C O P P E R ALLOY

2N5401

Abstract: N5400 2N5400 MOTOROLA 2N5400
Contextual Info: Am plifier T ra n sisto rs 2N 5400 2N 5401* PNP Silicon "M otorola P referre d D evice COLLECTOR 3 Boca Semiconductor Corp. BSC 2 BASE 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N5400 2N5401 Unit VCEO 120 150 Vdc C o lle c to r-B a s e Voltage

PTI 30 040 pa

Abstract: c4419
Contextual Info: fax id: 5400 p vp: v « *1 X X CY7C441 CY7C443 - Clocked 512 x 9, 2K x 9 FIFOs Features • H i g h - s p e e d , l o w - p o w e r , first-in f i r st - out F I F O memories . 512 x 9 ( C Y 7 C 4 4 1 ) . 2 ,0 48 x 9 ( C Y 7 C 4 4 3 ) • 0. 65 m i c r o n C M O S for o p t i m u m s p e e d / p o w e r

SF 818 D

Abstract: 1290mm nf 736
Contextual Info: HIGH POWER COAXIAL TERMINATIONS CONDUCTION COOLED The 3000 Series High Power C o a x ia l Term inations are C o n d u c tio n C o o le d Loads th a t require m ounting to an external h e a t sink. Meets a p p lic a b le portions o f MIL-E-5400 a n d MIL-R-55342.

200S

Abstract: CY7C441 CY7C443 ncd4
Contextual Info: fax id: 5400 CY7C441 CY7C443 Clocked 512 x 9, 2K x 9 FIFOs Features • H ig h-speed , low -pow er, first-in first-o u t F IF O m em o ries • 512 x 9 (C Y 7C 441) • 2,048 x 9 (C Y 7 C 44 3) • 0.65 m icron C M O S fo r o ptim u m sp ee d /p o w e r

tda120XX

Abstract: sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1
Contextual Info: N U N U N U N U N U C C C C C O O O O O TR O TR O TR O TR LL LL LL LL ED ED ED ED C PY PY PY P O O O O C C C U U U N N O O O C C C Product data sheet N N N Rev. 3.6 — 26 April 2006 O TR N N N N N Versatile signal processor for low- and mid-range TV applications

7400 fan-out

Abstract: 7400 quad 2-input NAND gate tPHL 7400 TI TTL 5400 7400 quad 2 input nand gate 9N00/7400 ttl nand gate 7400 quad TTL 7400 fairchild 7400 logic diagram ttl nand gate 7400
Contextual Info: F A IR C H IL D TT L/SSI . 9N00/5400, 7400 Q U A D 2-IN PU T N A N D G ATE S C H E M A T IC D I A G R A M E A C H G A T E L O G IC A N D C O N N E C T IO N D I A G R A M D IP (T O P V IE W ) F L A T P A K (TOP V IE W ) RiïïiiïïiiïïirflFim li>j L£J

13SP

Abstract: 13SP 008 Z/Thermistor 13sp
Contextual Info: RFI SUPPRESSION COILS MISC. SMSC, MESC SERIES the Fortran electronics group U7 Approvals 565-2 Ml Ordering Code M IS C -1R 0M M IS C -2R 0M M IS C -3R 0M M IS C -6R 0M M IS C -140M M IS C -300M M IS C -400M M IS C -101M Inductance L ln H 1 * * 2 * * * *

XFWICS0B03-R22J

Contextual Info: XFMRS XFWICS0603 SERIES INDUCTORS TAPE AND 4000 REEL PACKAGING FOR HIGH VOLUME MANUFACTURING PCS PER 7 ” REEL FOR D C / D C CONVERTERS, TEMP. 1 5*C TYPICAL ABOVE RISE; OPERATING RoHS TEMP.: C o m p lia n t / D C /A C -4 0 'C Lead INVERTERS, VRM APPLICATIONS

FET BFW 43

Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
Contextual Info: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M*- t-* o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—

IC 7402, 7404, 7408, 7432, 7400

Abstract: TTL IC 7405 7400 logic gate ic IC AND GATE 7408 ic 7400 logic symbol 7408 AND GATE fan in 9N01 IC 7400 nand gate 7408, 7404, 7486, 7432 IC 7404 hex inverter
Contextual Info: SSI • GATES, BUFFERS AND INVERTERS LOW POWER tpcj = 20 ns Pd = 2 mW per Gate STANDARD tpd = 10 ns Pd = 10 mW per Gate 0°C to +70° C and -5 5 ° to +125°C 0° to +70° C -5 5 ° t o +125° C 9 L00 9N00/7400 9N00/5400 9N01/7401 9N01/5401 9N03/7403 9N03/5403

TC5116400

Abstract: tc5116400csj 300D1 toshiba RAS-25
Contextual Info: INTEGRATED TOSHIBA TO SH IBA M O S DIGITAL NTEGRATED CIRCUIT CIRCUIT TECHNICAL T C 5 1 16 4 0 0 C S J / C S T - 4 0 T C 5 1 1 6 4 0 0 C S J / C S T - 50 T C 5 1 1 6 4 0 0 CSJ / C S T * 60 DATA SILICON GATE C M O S TENTATIVE D ATA 4,194,304 W O R D x 4 BIT D Y N A M IC R A M

FZ800R12KF4

Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

IGBT FZ 1200 r12

Abstract: FZ800R12KF4 fz 1200 r12 kf 4 1G18
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

IGBT FZ 1600 r12 kf4

Abstract: FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

FZ800R12KF4

Abstract: IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

LR33300

Abstract: CRD-5400 LR3330
Contextual Info: CRD-5400 RAID D is k A r r a y C o n tro ller CM D 's new C R D -5 4 0 0 SCSI to SCSI R A ID controller is the industry's best solution for building low cost disk array subsystems for use in PCs and desktop workstations. The C R D -5 4 0 0 breaks new ground for the data storage VAR and

RabbitCore RCM3700 Users Manual

Abstract: QK145 DE9 connector AN406 RCM3700 RCM3750 cx9 c37
Contextual Info: Installing and Running Dynamic C Once the RCM3700 is connected and Dynamic C is installed as described in the preceding pages, start Dynamic C by double-clicking on the Dynamic C icon or by double-clicking on dcrab_XXXX.exe in the Dynamic C root directory, where XXXX are version-specific characters. Dynamic C uses the serial port

srf 2325

Abstract: FHW0805UC1R0 FHW0603UC012 FHW1210 FHW0805UC1R2 FHW0805 FHW0805UC1R8 FHW1008 FHW1008UC1R0 IF1801
Contextual Info: W I R E WOUND C H I P I N D U C T O R •mm^n^femm WIRE • WOUND CHIP INDUCTOR OUTLINE * W i r e wound c h i p in d u cto r is c o m b in in g h in g p r e c i s i o n a c o il p e r f e c t c o m b in e fra m e w o rk te c h n o lo g y .C o m p a ra b le w it h t r a d i t i o n a l

MX29GA129E

Abstract: MX29GA257E MX29GA MX29GA257 Q0-Q15 SA10
Contextual Info: MX29GA129E C/F MX29GA257E C/F MX29GA129/257E C/F DATASHEET P/N:PM1503 REV. 1.0, NOV. 27, 2009 1 MX29GA129E C/F MX29GA257E C/F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

2308E

Abstract: A-2308E A-2308G A-2308SR A-2308Y C-2308E C-2308G C-2308SR C-2308Y E-41
Contextual Info: C/A-2308X ALPHA-NUMERIC DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color C-2308E A-2308E GaAsP/GaP Hi.effi Red C-2308G A-2308G GaP C-2308Y A-2308Y GaAsP/GaP Yellow C-2308SR A-2308SR GaAlAs Green Wave Electro-Optical Characteristics

C-3001G

Abstract: C-3001E C-3001SR C-3001Y A-3001E A-3001G A-3001SR A-3001Y
Contextual Info: C/A-3001X SINGLE DIGIT DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color C-3001E A-3001E GaAsP/GaP Hi.effi Red C-3001G A-3001G GaP C-3001Y A-3001Y GaAsP/GaP Yellow C-3001SR A-3001SR GaAlAs Green Wave Electro-Optical Characteristics