C 5088 Search Results

BTS089

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1* C O L LE C T O R 3 'Motorola Preferred Device % MAXIMUM RATINGS Rating Sym bol 5088LT1 5089LT1 Unit Collector-Em itter Voltage VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

2N508

Abstract: 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

2n508

Abstract: 2n5088
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

M5L8049

Abstract: ta8783 CSB503F5 D 8049 NEC
Contextual Info: APPLICATIONS m u R a ta RESONATORS Fig- 7-1 B a s ic O s c illa tio n C irc u it w ith C M O S In v e rte r IC : C D 4 0 6 9 U B E M O S X : C e ra m ic R eso n ato r C L„ C|_2 : Loading C a p a c ita n c e R d : D am p in g R esistan ce C e r a m ic

mpsa18

Abstract: 2N5088
Contextual Info: 2N5088 2N5089 MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit C o lle c to r -E m itte r V o lta g e v CEO 30 25 Vdc C o lle c to r-B a s e V o lta g e v CBO 35 30 V dc 3.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s •Emitter-Base V o lta g e >C

BC118

Abstract: 2N3692 2N3694 2N5133 BC107 BC135 MA4101 108B 40MHZ me4102
Contextual Info: /moll /ignol Tron/i/tor/ npn TO-IO« TO- 18 f E le c tric a l C h a ra c te r is tic s @ T A = 2 5 ° C M a x im u m R a tin g s \ TYPE NO. BVc b O O CÛ UJ > co 'C O UJ ü > Pd h p E @ V ç e @ *C V C E s a t @ ' c / ' b Cob m ax. m ax. NPN m in . /m a x .

6428A

Abstract: 2N6428 2n5088 transistor 2N5088 2N6428A N6428
Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo= 50V • C ollector Dissipation: P c m a x = 62 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage

Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V C e o = 50V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage

MA550

Abstract: 2N5088 2N5962 MMBT5962
Contextual Info: S E M IC O N D U C T O R 2N5962 MMBT5962 M a rk : 1 1 7 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general p u rp o se a m p lifie rs re q u irin g c o lle c to r cu rre n ts to 50 mA. Sourced from Process 07. See 2N 5088 for characteristics.

Contextual Info: E ng ineerin g D ata Performance Specifications C o n ta c t D ata T h e A -L in e c o n n e c to r line is b u ilt to c o n fo rm to a n d e x c e e d th e te s t re q u ire m e n ts o f M IL -C -2 6 4 8 2 S e rie s II s p e c ific a tio n . It is a ls o c o m p a tib le w ith a n d m a te a b le to s im i­

Contextual Info: 2731 Geräteanschlusskabel www.schurter.com/pg07_2 Netzweiterverbindungsleitung mit IEC Gerätanschlussstecker C, gerade C 70° C Beschreibung Referenzen Netzweiterverbindungsleitung, Schutzklasse II, Stifttemperatur 70 °C, Kabel Allgemeine Informationen

Contextual Info: 2730 Geräteanschlusskabel www.schurter.com/pg07_2 Netzweiterverbindungsleitung mit IEC Gerätanschlussstecker C, gerade C 70° C Beschreibung Referenzen Netzweiterverbindungsleitung, Schutzklasse II, Stifttemperatur 70 °C, Kabel Allgemeine Informationen

Contextual Info: PCB - Lead Wire Strain Relief Terminals F o r high q u a lity W ire -to -P C B c o n n e c tio n s , Z ie ric k c rim p -o n stra in re lie f te rm in a ls o ffe r an e c o n o m ic a lte rn a tiv e to c o s tly m ating c o n n e cto rs, te rm in a l b lo c k s and h e a d e r strip s. S tra in re lie f te rm in a ls crim p

Contextual Info: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C ollector-E m itter Voltage: V Ceo = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage

5088E

Contextual Info: CMLT5088EM SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high

Contextual Info: CMLT5088EM SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high

Contextual Info: CMLT5088EM SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high

LT 5226

Abstract: M83421 M83421/01-2172R M83421/01-5246S
Contextual Info: MIL STYLE FILM CAPACITORS DEARBORN MIL-C-83421/01 H E R M E TIC A LLY -S E A LE D A X IA L -L E A D M E TA LIZ E D -P O LY C A R B O N A TE C A P A C IT O R S T O M ILITA R Y S P E C IFIC A TIO N M IL-C - 83421/01 MIL STYLE CRH01, CRH02, CRH03, CRH04, CRH05

M15098

Abstract: MS90451-7152 MS25237-387 ms24515 MS25237-327 MS24367-715AS15 MS25231-313 MS25237 OL387 MS15571-11
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 _ 708-459-3400 Fax 708-459-2708 flH H C h ic a g o M iniature WHERE INNOVATION COMES TO LIGHT C o m p e titiv e C ross R e fe re n c e Competitor Page

2N6428A

Contextual Info: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo= 50V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

N5089

Abstract: 2N5088
Contextual Info: MAXIMUM RATINGS Symbol 2N5088 2N5089 Unit C o lle ctor-E m itter V o ltage v CEO 30 25 Vdc C ollector-Base V o ltage v CBO 35 30 Vdc Em itter-Base V o ltage v EBO 3.0 Vdc C o lle ctor C u rre n t — C o ntinuous •c 50 m A dc Total Device D issipa tion Derate above 25°C

stm 8309

Abstract: m3003 L 0904 8178 bat 63-03 HF 4053 C2899 pa 3029 b MARKING 8042 M3003 16 aw 7199
Contextual Info: A CO M PA N Y M39003/01/02/03/04/06/09 Solid Tantalum C a p a cito rs S o lid -E le ctro ly te T a n t a l e x C a p a c ito rs , M ilitary MIL-C-39003 Q u alified, S ty le s C S R 0 9 , 13, 21, 23, 33, 91 OF SPRAGUE S T Y L E , D OCU M EN T/D ETAIL S P E C

Contextual Info: 2712 Cord Sets www.schurter.com/pg07_2 Interconnection Cord with IEC Plug C, Angled C 70° C Description Interconnection Cord, Protection class II, Pin temperature 70 °C, Cable Approvals pdf, html, General Product Information, Approvals, RoHS, CHINA-RoHS,

Contextual Info: 2730 Cord Sets www.schurter.com/pg07_2 Interconnection Cord with IEC Plug C, Straight C 70° C Description Interconnection Cord, Protection class II, Pin temperature 70 °C, Cable Approvals pdf, html, General Product Information, Approvals, RoHS, CHINA-RoHS,