C 34 F 6PIN Search Results

Contextual Info: 3875081 G E S O L I D STATE 01 E D 19830 Optoelectronic Specifications _ V 7 HARRI S SEMICOND SECTOR 3 7E » Ml 4305571 Photon Coupled Isolator C N Y 30-C N Y 34 Ga As Infrared Emitting Diode & Light Activated SCR T he G E Solid S tate CNY30 and C NY34 consist o f a gallium arsenide,

958M

Contextual Info: Panasonic GaAs MMICs GN01059B GaAs IC with b u ilt-in fe rro e le ctric D is trib u tin g a m p lifie r • • • Features High-isolation distribution amplifier High-gain Low consumption current Small package: Mini 6pin ■ A b s o lu te M a xim u m R atings (Ta = 25°C)

Contextual Info: Crystal Clock Oscillator TCO-726DHVX 6pin J-Lead VCXO Features Absolute Maximum Ratings Parameter Supply voltage Input voltage Output voltage Output current Storage temperature CMOS logic output Ceramic package with J-Lead Voltage controlled oscillator Enable/Disable feature

KW2-281CGA

Contextual Info: LUCKY LIGHT KW2-281CGA DATA SHEET QC: Part No. ENG: KW2-281CGA Spec No. Prepared By: S/N-030815011D Page 1 of 4 LUCKY LIGHT Features ♦ 0.28"Dual Digit Super Green ♦ Common Cathode Common PIN 9 And 6PIN ♦ Gray Face，Color Segment Package Dimension:

GRM36

Abstract: NJG1528KC1 0105G
Contextual Info: NJG1528KC1 トランスファースイッチ GaAs MMIC •概要 NJG1528KC1 は CDMAGPS、PCS 等のデュアル、ト リプルモード端末のアンテナ切り替えに最適なトランス ファースイッチです。 高電力通過時の低損失、高アイソレーションを特徴とし

marking 2h sot363

Contextual Info: BGA2870 MMIC wideband amplifier Rev. 1 — 24 February 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

MA126

Contextual Info: 2SK1478 Switching Diodes MA126 Silicon epitaxial planer type Unit : mm For switching circuits +0.25 0.65±0.15 Symbol +0.1 +0.1 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter 2 0.16–0.06 1.1–0.1 +0.2 High voltage resistance VR : 80V

Contextual Info: ISOCON COnPONENTS LTD 7SC D • 4fiât510 g HO 7 " V/- £7 CNY 30, CNY 34 OPTICALLY COUPLED SCR ISOLATORS •• v a v . . ^ * ¿■i'-'a , Y*. ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted Storage to + 150

3072 rohm

Contextual Info: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5451EFV No.11075EAT17 ●Description BD5451EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 15W+15W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD

GRM188B11E104KA01D

Abstract: bd5451
Contextual Info: BD5451EFV Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5451EFV No.11075EAT17 ●Description BD5451EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 15W+15W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD

GRM188B11E104KA01D

Abstract: 3072 rohm
Contextual Info: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5451EFV No.11075EAT17 ●Description BD5451EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 15W+15W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD

marking m2i

Abstract: MA125
Contextual Info: 2SK1406 Switching Diodes MA125 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.5 –0.05 1 +0.1 +0.1 6 2 4 3 +0.1 0.16–0.06 +0.2 1.1–0.1 mounting 5 0.8 +0.2 2.9 –0.05 Four-element incorporated in one package, enabling high-density

Contextual Info: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or

Contextual Info: Middle Power Class-D Speaker Amplifiers Class-D Speaker Amplifier for Digital Input BD5451EFV No.11075EAT17 ●Description BD5451EFV is a Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 15W+15W. This IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD

PG2009TB

Abstract: spdt mark s22
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion

Contextual Info: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or

ML22310-XXX

Abstract: TOP3 package MSM9800 PEDL22300FFULL-01 SSOP30-P-56-0
Contextual Info: OKI Semiconductor ML22310-XXX ML22Q310 PEDL22300FFULL-01 Issue Date: Sep. 7, 2007 Preliminary OKI ADPCM Speech Synthesis LSI GENERAL DESCRIPTION The ML22310 and ML22Q310, which include mask ROM and Flash memory for storing speech data, respectively, are speech synthesis LSIs which can controll speech playback utilizing an event input system.

SCH5017-NW

Abstract: AMD Athlon 64 X2 dual 4800 pin out ATI RS690 APW7120 L1117L APL1805 SCH5017 tpa 5017 C2001L C63000
Contextual Info: 8 7 6 5 4 3 2 1 SHEET ATI RS485M+SB600 Block Diagram M/B size: mm 133MHz/133MHz# 200MHz/200MHz# 266MHz/266MHz# D AMD S1 PROCESSOR 638-Pin uFCPGA 638 DDR II 400/533/667 17,18 HyperTransport LINK0 16x16 17,18 200-PIN DDR2 SODIMM LVDS CON 11 EXTERNAL CLOCK GENERATOR

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 4 — 9 December 2014 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 2 — 1 May 2012 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES • PACKAGE DRAWINGS (Unit: mm) Low noise NF = 1.3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz

Contextual Info: BGA2818 MMIC wideband amplifier Rev. 3 — 19 August 2013 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

UPG2009TB-A

Abstract: SW SPDT 6pin UPG2009TB HS350 UPG2009TB-E3-A VP215
Contextual Info: NEC's L, S-Band HIGH POWER UPG2009TB SPDT Switch FEATURES DESCRIPTION • • • • NEC's UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, with low insertion

kb910qf c1

Abstract: KB910QF PCI7412 LA-3011P 3011P TCD42A SLB9635TT1.2 ICS954305 KB910QF compal compal
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_PM+ICH7-M core logic 2005-08-26 3 3 REV:0.2 4 4 Compal Secret Data Security Classification 2005/06/01 Issued Date 2006/06/01 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL