C 34 F Search Results

Contextual Info: TGA2706-SM 2 Watt C-Band Packaged Power Amplifier Key Features • • • • • • • Measured Performance Frequency Range: 5.5 – 8.5 GHz Power: 34 dBm Psat, 32 dBm P1dB Gain: 31 dB TOI: 42 dBm NF: 7 dB Bias: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical

automotive power protection

Contextual Info: STEVAL-IFP019V1 Quad high-side smart-power solid-state relay demonstration board based on the VNI4140K-32 Data brief Features • Output current: 1 A per channel ■ Shorted load protections ■ Junction overtemperature protection ■ Case overtemperature protection for thermal

EEPROM

Abstract: M93C86
Contextual Info: M93C86, M93C76, M93C66 M93C56, M93C46 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit 8-bit or 16-bit wide MICROWIRE serial access EEPROM Features • Industry standard MICROWIRE bus ■ Single supply voltage: – 4.5 V to 5.5 V for M93Cx6 – 2.5 V to 5.5 V for M93Cx6-W

Contextual Info: TOSHIBA TC74HCT373AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCT373AP, TC74HCT373AF, TC74HCT373AFW OCTAL D -T Y P E LATCH WITH 3 - STATE OUTPUT The TC74HCT373A is a high speed CMOS OCTAL LATCH with 3 - STATE OUTPUT fabricated with silicon gate C2MOS

Contextual Info: Advance Product Information November 2, 2004 30-38 GHz Balanced Low Noise Amplifier TGA4511-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 Noise Figure dB 0.15 um pHEMT Technology

HC-521

Contextual Info: TC74HCT373AP/AF/AFW TC74HCT533AP /AF OCTAL D - T Y P E L A T C H W I T H 3 - S T A T E O U T P U T TC74HCT373AP/AF/AFW NON-INVERTING TC74HCT533AP/ AF INVERTING The TC74HCT373A an d HCT533A are high speed CMOS OCTAL LA TC H w ith 3 -S T A T E O U TPU T fab ric ate d w ith

Contextual Info: Advance Product Information September 18, 2006 Ka-Band Packaged MPA TGA4902-SM Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications

Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:

TGA4512-SM

Abstract: RO4003 Ka-band
Contextual Info: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB

Contextual Info: TQQ1212 1900/2017.5 MHz Dual Band Saw Filter Module Applications • General Purpose Wireless • Uplink Band 34 and Band 39 Infrastructure 6 Pin 3 x 4 mm leadless SMT Package Product Features • • • • • • • • • Functional Block Diagram

Contextual Info: SN55563A, SN55564A ELECTROLUMINESCENT ROW DRIVERS D 3 3 1 3 , OCTOBER 1 9 8 9 S N 55S63A . . . FJ PACKAGE • Each Device Drives 34 Electrodes • Selectable Open-Source or Open-Drain Output • Outputs Rated at 225 V • Output Current Capability: - 9 0 mA to 150 mA

Contextual Info: Advance Product Information June 2, 2005 Ka-Band Packaged MPA TGA4902-SM Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz

Contextual Info: Advance Product Information September 21, 2005 32 - 47 GHz Wide Band Driver Amplifier TGA4521 Key Features • • • • • • • • Product Description The TriQuint TGA4521 is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint’s

TGA4508-EPU

Contextual Info: Advance Product Information February 19, 2003 Ka Band Low Noise Amplifier TGA4508-EPU Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R etu rn L o ss d B 40 30 Gain 20

ta8601bn

Abstract: ta8601 23P100 23A50 P46C 23m500 C20N TA8601B MAXIAU
Contextual Info: TOSHIBA Unit: TENTATIVE VIDEO-CHROMA-DEFLECT ION SYSTEM FOR A COLOR TELEVISION NTSC mm Z The TA8601BN combines the Video-Chroma sub­ system and the Deflection stage on a single monolithic integrated circuit to provide a Color Television Video-Chroma-Deflection systea.

SP508ECF-L

Abstract: 124 resistor SP508EEF-L
Contextual Info: SP508E Rugged 20Mbps, 8 Channel Multi-Protocol Transceiver with Programmable DCE/DTE and Termination Resistors FEATURES Now Available in Lead Free Packaging • 20Mbps Differential Transmission Rates Refer to page 7 for pinout • 15kV ESD Tolerance for Analog I/Os

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

Contextual Info: Advance Product Information March 14, 2003 Ku Band 2W Packaged Amplifier TGA8658-EPU-SG TGA8658-EPU-SD Key Features • • • • • • • • • Frequency Range: 13-17 GHz Optimized for VSAT band 13.75-14.5GHz 33 dB Nominal Gain Typical > 33.5 dBm Psat in VSAT band @ 7V

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.0dB at 3.7GHz to 4.2GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=6.5dB at 7.7GHz to 8.5GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM7179-4UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz