C 337 25 Search Results

marking code CSK

Abstract: transistor marking CSK AD004-00 AD004-02
Contextual Info: H Y - L IN E Sensor-Tec Vertriebs GmbH Inselkammerstraße 10 D-82008 Unterhaching Tel.: 089 / 614 503 30 Tel.: 0 8 9 /6 1 4 09 60 S E N S O R - T E C RS 337-7381, 337-7397, 337-7410 GMR Digital Magnetic Field Sensors AP Series NVE s GMR Digital Magnetic Field Sensors offer unique

sensitivity dB photodiode pin

Abstract: fu 9204 FU-322SPP-7 FU-322SPP-V7 FU-322SPP-W7 STM-64 photo-diode bias mitsubishi receiver photodiode reciever ghz optical reciever
Contextual Info: TZ7-02-337 Rev.E 17 April, 2003 Approved Charged - Approved Customer Approval Preliminary Specification for 10Gb/s PD Receiver module FU-322SPP-*7 A B X Date 18 Apr.2003 MITSUBISHI ELECTRIC.CORP. C D Approved H.Watanabe TZ7-02-337 Rev.E 17 April, 2003

sensitivity dB photodiode pin

Abstract: FU-322SPP-7 FU-322SPP-V7 FU-322SPP-W7 STM-64 optical fiber at 1.55um mitsubishi receiver 02337
Contextual Info: TZ7-02-337 Rev.C 1/5 29 August, 2002 Approved Charged Approved Customer Approval Preliminary Specification for 10Gb/s PD Receiver module FU-322SPP-*7 A B x Date 30 Aug.’02 MITSUBISHI ELECTRIC.CORP. C D Approved T.Nambara TZ7-02-337 Rev.C(2/5) 29 August, 2002

Contextual Info: Types 330-0, 332-0, 333-0, 335-0, 336-0, 337-0, 338-0 Series KWP Power Wirewound Resistors radial, glass fibre core, ceramic case Technical Specifications Type Rated power* [W], Sa 'O C 25°C 330-0 332-0 333-0 335-0 336-0 337-0 338-0 3,0 5,0 7,0 9,0 10,0 15,0

010R0100

Abstract: 16v 4600 uf
Contextual Info: /A LOW ESR TANTALUM CHIP TOC 1/ r*A Q E I r O V U /tO C Part Number TPS V 337 M 010 R 0100 337 10V TPS V case is the latest addition to the AVX TPS series of low ESR tantalum capacitors with dimensions designed to maximize capacitance/voltage ratings and

Transistor 337

Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Contextual Info: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier

Contextual Info: Total Number of C ontacts-Contact C ode-Contact Rows and Insulator Style Mounting O ptions-Series 337 387 Total Number of C ontacts*12 6 5 4 3 006,007,.043 012, 014,.086 1 I « « ♦ ♦ ♦ « ♦

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

Contextual Info: 6.85±0.08 .270±.003 FOR #6-32 SCREW 6.5 .256 6.85±0.08 .270±.003 RECOMMENDED HOLE SIZE 5.59 .220 11.4 .449 NOTES: 1. MATERIAL: 0.47 [.019] THICK SK-5 HEAT TREATED STEEL RMS-338 . FINISH: ZINC PLATED (RMS-337). ROCKWELL: "C" 40-45. TITLE: F E D C REV.

BC337

Abstract: TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 328 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

Contextual Info: a/7 A M P com pany GaAs SPDT Terminated Switch DC - 2.5 GHz SW-337, SW-338, SW-339 V2.00 Features SO-8 PIN i H H H • V ery Low P o w er C onsum ption: 7 5 pW O rientation m ark PIN 1— • Low In sertio n Loss: 0 .5 dB • H igh Isolation: 33 dB up to 2 GH z SW -337, SW -338

bc337

Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
Contextual Info: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C

BACC65BD

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT - RELEASED FOR PUBLICATION 6 5 4 3 2 - LOC - ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST - P LTR F 3.346 CIRCIUT #1 IDENTIFIER INDENT .000 .630 C .003 .003 .003 .003 .003 .702 .885 1.067 1.250 .003 .337 .520 .003

Contextual Info: Æ rrvumi Ê Ê m F TE C H N O LO G Y LT137A /LM 137 _LT337A /LM 337 Negative Adjustable Regulator F€flTUR€S D C S C R IP T IO n • ■ ■ ■ ■ The LT137A/LT337A negative adjustable regulators will deliver up to 1.5Amps output current over an out­

DIL 16

Abstract: 3PIR 2PIR
Contextual Info: ERICSSON COMPONENTS AB 44E D 3373314 0D02211 Power Industries 337 lERIC 7 57 - DC/DC Converters 0.3-6W Regulated or non-regulated types in thickfilm hybrid or SM D technology Input: Output: 5VDC to 48VDC 5VDC to 15VDC ±12V D C to ±18V D C Input filter not type 1PIN

PIR D 203 S

Abstract: 3PIR Ericsson Components 3PIR ERICSSON 2pir0512 PIR 203 S 2pir dil16 DIL-16 pir 4pin
Contextual Info: ERICSSON COMPONENTS AB 44E D 3373314 0D02211 337 lERIC Power Industries 7 57 - DC/DC Converters 0.3-6W Regulated or non-regulated types in thickfilm hybrid or SM D technology Input: Output: 5VDC to 48VDC 5VDC to 15VDC ±12V D C to ±18V D C Input filter not type 1PIN

1N4153

Abstract: JANTXV1N4153 ADE 617
Contextual Info: COMPUTER DIODE JAN, JANTX & JANTXV 1N4153 150mA Switching Diode FEATURES • • • • • DESCR IPTIO N M etallurgical Bond Qualified to MIL-S-19500/337 Planar Passivated C h ip DO-35 Package Non-JAN Available This device is particularly suited to applications where tigh tly controlled

Contextual Info: Customer Information Sheet DRAWING N o .: M80-5DI0805MI-00-000-02-337 SHEET 2 OF 2 | IF IN D OUBT - ASK | c | NOT TO SCALE | THIRD ANGLE PROJECTION | ALL DIMENSIONS IN SPECIFICATIONS: MATERIAL: MOULDING: GLASS F I L L E D PPS, U L 9 4 V - 0 , BLACK S I G N A L C O N T A C T : BRASS

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TTtmHE G O mb Df l 337 « S r i G K KMM5322000AV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflA C KMM5322000AV- 7 KMM5322000AV- 8 KMM5322000AV-10 • • • • •

Contextual Info: 1 31 I I , I ISHEET I File No. I 337 Q 1 /I SPECIFICATIONS Current Rating: 1 Amp Insulation Resistance:5000 Megohms Min. At DC 500V Contact Resistance:20 Milliohms Max. At DC 100mA Dielectric Voltage:500V AC For One Minute Operation Temperature:—55’C To +105"C

ASSEMBLY INSTRUCTIONS Radiall

Abstract: R143018 Radiall 321 007 000 ASSEMBLY INSTRUCTIONS Radiall crimp 02 Radiall 161 256 000 RRU 32 ASSEMBLY INSTRUCTIONS Radiall solder 02 R 143 018 000 R 143 156 000 3549B
Contextual Info: ASSEMBLY INSTRUCTIONS W asher M01 B ack n u t I T Body réducteur ▼ & C e n te r C o n ta c t G asket B ra id c la m p ▼ D C O NNECTO RS R 143 052 000 R 143 337 000 1-1 2-1 2-2 Strip cable. .205 5,2 Fit back nut, washer, gasket and braid clam p, reducing adaptor.

XCM NFC 63-145 y2

Abstract: XCM-A110 XCM-A102 XCMA102 XCM-A115 XCM-F102 NFC 63-145 Y2 XCM-F110 XES-P2151 XCKJ10511H29
Contextual Info: Limit switches Double insulated, types XCK-P and XCK-T General characteristics Environment Conforming to standards 3 Products IEC 947-5-1, IEC 337-1, EN 60 947-5-1, NF C 63-146, VDE 0660-200, UL 508, CSA C22-2 n° 14 Machine assemblies IEC 204-1, EN 60 204-1, NF C 79-130

BACC65BC12

Abstract: bacc65bc12na BACC65Bc BACC65BC12a 1445693-4 BACC65BC12N
Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT - RELEASED FOR PUBLICATION BY - 6 5 4 3 2 - LOC - ALL RIGHTS RESERVED. 1 REVISIONS DIST - P LTR N SEE JACKSCREW DETAILS .003 +.001 .672 -.002 .000 .003 .003 .003 .003 .003 .702 .885 1.067 1.250 .003 .337 .520 .003

Contextual Info: 05.84 MAX. 06.2 MAX. 15.9 MAX. 5 .6 ±0.10 JKL LAMP VOLTS AMPS NUMBER RATED ±10% 266 253 FG23 3152 7348 8705 337 7351 8708 379 398 709 397 7354 386 336 393 346 457 7355 388 334 276 334LSV 7356 METRIC DRAWN BY L. W EN G STRO M RELEASE & C ANC EL 7346, 7347