C 3311 TRANSISTOR Search Results

MS 600 35

Abstract: ECG3300 ECG3320 ECG3322 ECG3303 IGBT 200 A ECG3311 TR IGBT tr06 ECG3301
Contextual Info: Insulated Gate Bipolar Transistors IGBT ECG Type Description Collector DC to Emitter Collector Voltage Current Iq V CES A mps E C G 3 3 00 IGBT, N-Ch A Enhancement 400 10 Gate to Emitter Cutoff Voltage v GE(th) Gate to Emitter Voltage V G ES ±25 Collector to

BUT93

Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11
Contextual Info: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e

Contextual Info: SOLI» STATE DEVICES INC 15E D |i3ttQll DD02071 S | T - 33-11 2N5002 AND 2N5004 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807

Contextual Info: ROHM CO LTD 4DE 7 ô 2 f l ci cn D OOOSTGT Ü • N 37 > v X $ /Transistors 2SD158Ò - 1 5 S 0 RHM 7 ^ 3 3 -/J NPN ' > • ; = ! > h 7 > v X $ ■flÜcJil} J & H ! i | lf if f l/ L o w Freq. P ow er Amp.

TIP47

Abstract: TIP-47 TIP48 TIP49 TIP50 d0312
Contextual Info: PHILIPS INTERNATIONAL 4SE D E3 711002t. G0312M5 b E3PHIN 11 TIP47; TIP48 jI TIP49; TIP50 T-33-K ~ SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in T 0-22 0 envelope for amplifier and switching applications.

T1P50

Abstract: transistors t1p50
Contextual Info: PHILIPS INTERNATIONAL 45E D CI 711Qö2ti DQ31SMS h E3PHIN 11 TIP47; TIP48 J I TIP49; TIP50 r-33-// — SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in T 0-220 envelope for amplifier and switching applications.

acrian RF POWER TRANSISTOR

Abstract: VTV-075-2 F627-8Q1 VTV150 F627-8 VTV075 VTV-075 VTV-075-3 VTV-075-4 acrian inc
Contextual Info: GENERAL V I v - u / o 7.5 WATTS • 2$ VOLTS 175-225 MHz VHF - TV LINEAR DESCRIPTION The VTV-075 is a silicon NPN transistor designed for linear broadcast applications. It has been designed for high efficiency, 3high linearity, Class A operation in VHF Band III

TIP32 TI

Contextual Info: TIP32; A TIP32B; C J^ P H I L IP S INTERNATIONAL SbE D • 711DÛBb □GMBHTD T2T « P H I N T - 33-11 SILICON EPITAXIAL BASE POWER TRANSISTORS PNP transistors in a plastic T 0-22 0 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. NPN complements are TIP31 series.

Contextual Info: ROHM CO LTD 7fl20ciclcl 0 0 0 b 0 3 4 1 H R H H 4GE D N 7 > y 7s $ / J ransistors 2SD2023 2SD2023 - 7=33-11 =.W &k% Tf\s—ï f à NPN '> U = l> h 7 > V ^ ^ 1g ;ilil£ti:ftiiliM /L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor

BD203

Abstract: BD201 BDx77 T-33-11 BD202 BD203 npn BD204 BDX78
Contextual Info: BD201 B D 203 BDX77 PHILIPS INTERNATIONAL SbE D m VllüöEb □D4S7TÖ 07b I PHIN r-33 SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. W ith th e ir PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t o f 15 to 25 W in to a 4 £2 or

ZTX948

Abstract: DSA003779
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V*

rft sk 3000

Abstract: RFT r 4100 service-mitteilungen KF 517 GER-A RFT Service Mitteilung servicemitteilungen Mitteilung VEB RFT RFT Transistoren robotron
Contextual Info: SERVICE-MITTEILUNGEN IRIFÜT1 1R A D I O - t e / e v i s i o n 1 45 VE B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N April-Mai I“ Seite 1-8 1981 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig Einheitliche Anwendung von Vordrucken bei der Bearbei­

Compact FUSION Brochure

Contextual Info: Line B COMPACT FUSION SCR POWER CONTROLLERS 1 Compact FUSION Brochure Rev 3.50 www.ccipower.com 1-800-765-2799 Control Concepts Inc., 2013 FEATURES Auto-Ranging Input Voltage 24 - 600 VAC, 45 - 65 Hz AC Output 10 - 160 Amps Internal Class-T Fusing Blown Fuse Indicator

sje 2762

Abstract: uPA671T transistor a935 a935 transistor ic-8845
Contextual Info: h — '> U =1 > Silicon Transistor UPA671T P N P X l h 7 > fé J ^ Æ v 7 ^ 6 t f > 2 IU îèS Ü 'f iÆ /¿PA671TO, h 7 > v Z $ £20Ï&F*3Ü? U/c 5 K x / \ '< x U , Ü H æ j f CD[S]±, x h ^ g lM i;: » i l / S t o <=D m o S C - 7 0 / \° "J * T- v £ IH D tt- - f X < D / \" "J >t -

AD161/AD162

Abstract: AD162 AD161 GP 015 DIODE AD149 AC176 AC126 AC187 AC127 OC201
Contextual Info: 'TaiïuX 51 Electronic Valves Z & I Aero Services Ltd London England 1972-73 Tra n sisto rs Continued Notes Type Constr O utline P,ot fa Vcbo hfm at i c Notes Price £ O C200 S/PNP R08 200mW 7 00 kcl2 -2 5 1 5 -6 0 1mA Low Gain G.P. 0.30 OC201 S/PNP R08 200mW

Contextual Info: SIEMENS IL766 DUAL CHANNEL ILD766 SINGLE CHANNEL BIDIRECTIONAL INPUT DARLINGTON OPTOCOUPLERS FEATURES • Internal R BE fo r B e tte r S ta b ility • H ig h C u rre n t T ra n s fe r R a tio s , Vc e =5 V IU ILD766-1: 600% at l,r=2 m A IL766-2: 500% at lF=1.0 m A

Contextual Info: SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

Contextual Info: SGL50N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control,

Contextual Info: SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT General Description Features Fairchild’s RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

AN9020

Abstract: RUFD Fairchild 9020 IGBT 100A
Contextual Info: SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

6P45S

Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D

C2000

Abstract: sensorless FOC c source code F240 SMJ320F240 TMS320 XDS510 space vector PWM tms320 modulation projects random PWM
Contextual Info: T HE W ORLD L EADER I N D S P A ND A NALOG Up to 20 M IPS Key Features: • 132-pin ceramic quad flatpack Product Bulletin • 50-ns instruction cycle time SM/SMJ320F240 Military Digital Signal Processors • Military temp range: -55ºC to 125ºC • Watchdog timer and 3 general

6209A

Abstract: TC-6209A 2SA1611 04 NG 537
Contextual Info: zr— ^ — h N E C jr vU = i> 2SA1611 P N P X fcf£ * V # V=l> M m m m sm mm « "J o S / J\ f é W f ê T * U , /N'T 7 U KlCffl t 2.1 L T ft T - - T o < ¥ ii : mm ± 0.1 1.25 ±0.1 02SC4177 t 3 > y i j * > $ V ! : ' f è ï ï ? È £ T o o v m u s m ifX È

program code for assembly language dc motor control with

Abstract: military application for PWM rectifier motor speed control by using dsp assembly language program code dc motor control with C2000 DC MOTOR SPEED CONtrol pwm pic assembly language program for speed control of dc switched reluctance motor "source code" ac motor variable speed control circuit diagram assembly language program for speed control
Contextual Info: T HE W ORLD L EADER I N D S P A ND A NALOG Up to 20 M IP Key Features: • 132-pin ceramic quad flatpack Product Bulletin • 50-ns instruction cycle time SM/SMJ320F240 Military Digital Signal Processors • Military temp range: -55ºC to 125ºC • Watchdog timer and 3 general