C 14M Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C - RELEASED FOR PUBLICATION LOC 1 REVISIONS DIST H ALL RIGHTS RESERVED. BY - 1997 COPYRIGHT 2 3 - P DESCRIPTION LTR C DATE CAVITY NUMBERING REMOVED DWN APVD KJK 14MAY2013 RP D D "C" 2.54 1.27 2,65 C C "B" max "A" max 5.1 max

8ta16

Abstract: 6LF6 tube 6lw6 6lf6 tube 6LW6 dct 814 1nu1 N2606-02 6cw6 6bc6
Contextual Info: Cross Reference Chart Brennan No. N0304-C-01 N0304-C-02 N0304-C-04 N0304-C-05 N0304-C-06 N0304-C-08 N0304-C-10 N0304-C-12 N0304-C-14 N0304-C-16 N0304-C-20 N0304-C-24 N0304-C-32 N0318-01 N0318-02 N0318-04 N0318-05 N0318-06 N0318-08 N0318-10 N0318-12 N0318-14

3300 XL

Abstract: 5X465 capacitor 6r8
Contextual Info: Low Z 4-Terminal +105° C +125° C +105°° C +105° C Low Z +105°° C Low Z +105° C NACX SURFACE MOUNT +105° C 5.5mm Height +85° C +85°° C NACS NACE High Voltage +105°° C NACV +105° C +105°° C +85°° C NACP Low Leakage +85°° C +85°° C Bi-Polar

726534-1

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. P DESCRIPTION LTR A2 A3 D DATE DWN APVD ECO-11-005150 28MAR2011 RK HMR ECR-14-003870 14MAR2014 MG GS C D C FOR CONTACTS: MICRO-TIMER / TAB 1.6mm

Contextual Info: ALL EN A V I O N I C S INC ALLEN AVIONICS, INC. 5ME D • Q505a3a POOCHt+g Obs ■ 14MT 5 TAP ACTIVE MOLDING TYPE 10MT 10 TAP ACTIVE MOLDING TYPE ELECTRICAL CHARACTERISTICS Supply Voltage, V c c . 4-5 to 5.5 V Logic 1 Input Voltage

Contextual Info: 6 7 8 5 THE INFORM ATIO N C ONTAINED IN THIS D R AW IN G IS THE SOLE PROPERTY OF L-CO M , INC. A N Y REPRODUCTION IN PART OR WHOLE WITHOUT THE WRITTEN PERMISSION OF L-C O M , INC. IS PROHIBITED. D C .500-28 X 14M M HEX NUT INTERNAL TOOTH LOCKWASHER B Component Specifications

82c202 cpu

Abstract: CS8220 82C202 CHIPset for 80286 iAPX 286 P82C202 interfacing of memory devices with 80286 P82A205 82A203 A1719
Contextual Info: i o-Ce <2W > C i'" CHIPS. c x ^- / A-C- y > 9 - •9 82C201, 8 2 C 2 0 1 -1 0 /8 2 C 2 0 2 /8 2 A 2 0 3 /8 2 A 2 0 4 /8 2 A 2 0 5 C S 8 2 2 0 : P C / A T C O M P A T IB L E C H IP S e t " ■ Fully IBM PC AT Compatible ■ Flexible architecture allows usage in any

sincera varistor

Abstract: sincera 20e241k 20E241K-V 20E241K SINCERA
Contextual Info: METAL OXIDE VARISTORS General Characteristics Storage Temperature - 55° C to + 125° C Operating Surface Temperature 125° C Operating Ambient Temperature - 55° C to + 85° C without derating Maximum Voltage-Temperature Coefficient < -0.01 % / °C Insulation Resistance

CA5470M96

Abstract: CA5470 CA5470E CA5470M
Contextual Info: DUCT E PRO PRODUCT T E L O OBS ITUTE SUBST 04 at E L IB Center HA-51 rt PO S S o p p u nical S m/tsc r Te c h rsil.co e u t o n t .i c Quad, 14MHz, Microprocessor BiMOS-E c ont a or www ERSIL T IN 8 1-88 Operational Amplifier with MOSFET Input/Bipolar Output

Contextual Info: 2 DI ST LOG REVISIONS AENDERUNGEN AI P R O JE C T D E S C R IP T IO N B E S C H R E IB U N G N R .: 86-9771 F2 C .Beu J.Hahr 12.05.98 C .Beu J.Hahr 20.10.98 C .Beu J .Hahr Neuer Assemblage Automat NEW MANUFACTURING AUTOMAT 23.06.99 C .Beu J.Hahr H1 gelb war bordeauxviolet

varistor 594 PHILIPS

Abstract: VARISTOR 593 PHILIPS philips varistor 593
Contextual Info: Zinc-Oxide Varistors ZnO For Overvoltage Protection t Series 2322 532 593 594 595 B o d y d ia m e te r 7mm 5mm 9mm 7mm 13.5mm 10mm 17mm 14mm -w ith la c q u e r -w ith o u t la c q u e r _ M a x. c o n tin u o u s . _ j _ 14 to 460 V K to 460 V

Contextual Info: THI S DRAWI NG IS UNPUBL I SHED. COPYRI GHT 20 RELEASED FOR ALL PUBLI CATI ON RI GHTS LOC DI ST R E V I S I ONS RESERVED. DE S C R I P T I O N REVISED PER E C O- •005027 RK 14MAR201 I -2 NUMBER TH IS DRAWING IS A CONTROLLED DOCUMENT. TOLERANCES UNLESS OTHERWI SE S P E C I F I E D :

EIA-364-56A

Abstract: EIA364-56
Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - - ALL RIGHTS RESERVED. D 2.80 [.1 10 ] C UT 0.76 [.030] 5.08 [. 2 0 0 ] 2.54 [. 1 0 0 ] TYP 1 1 1 i 1 1 1 1 i 1 c c C" 1 1 1 1 1 1 l l 1 J r 3 C c 2

ABM3

Contextual Info: ABR A C O N Surface Mount Ultra Miniature MICROPROCESSOR CRYSTALS C € O R P O R A T I O ABM-2 ABM-2 & ABM-3 Series $ N Nominal Frequency Range .ABM-2 9.8MHz to 90MHz . ABM-3 (14MHz to 45MHz)

BS62LV1027

Abstract: BS62LV1027DC BS62LV1027JC BS62LV1027PC BS62LV1027SC BS62LV1027SI BS62LV1027STC BS62LV1027STI BS62LV1027TC BS62LV1027TI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ FEATURES • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 17mA @55ns operating current I- grade : 18mA (@55ns) operating current C-grade : 14mA (@70ns) operating current

SOP32 450mil

Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ FEATURES • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade : 17mA @55ns operating current I- grade : 18mA (@55ns) operating current C-grade : 14mA (@70ns) operating current

pwr_btn

Contextual Info: 1 + 3VS +3V AD[0.31] AD[0.31] 4,14,16,24 C/BE3# 4,14,16,24 C/BE2# 4,14,16,24 C/BE1# 4,14,16,24 C/BE0# 4,14,22,24 CLKRUN# 4,14,16,22,24 DEVSEL# 4,14,16,22,24 FRAME# 4,14,16,22,24 IRDY# 4,14,16,24 PAR 4,23,24 PCIRST# 4,22 PHOLD# 4,22 PHLDA# 4,14,16,22,24 SERR#

Contextual Info: SPECIFICATIONS: RECOMMENDED EXCITATION USING TEST CIRCUIT 8 V D C MIN POWER CONSUMPTION OUTPUT V O LTA G E TRIM POINT NULL VO LTA G E NULL V O LTA G E SHIFT (— 2 5 ° C TO + 8 5 ° C ) OUTPUT V O LTA G E SHIFT ( + 2 5 ° C TO — 2 5 °C ) ( + 2 5 ° C TO + 8 5 ° C )

IR 049P

Abstract: 221PN 236PN 034E 036PH 292PH 28SPN 041P GUP COTO
Contextual Info: 09/11/02 13 :3 5 N O .919 J1 COHBECTOft, BKSranST 1. 1 * 1 C O T P L Ï M G , E L E C T R I C , S O L D E R C O P O R r t A H G B M O U N T TERMTKATION P I H r.KMKH&T. T h i s d r a w i n g H H . - C - 2 6 5 0 0 , T y p e E < lex- c i r c u i t a p p l i c a t i o n s

CA5470

Abstract: CA5470E CA5470M CA5470M96
Contextual Info: CA5470 S E M I C O N D U C T O R November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ)

02n transistor

Abstract: KSB1022 KSD1417
Contextual Info: KSD1417 NPN SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC C urrent Gain • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSB1022 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 20 RELEASED FOR PUBLICATION BY - 2 3 LOC GP ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P C C1 D 18.50 DESCRIPTION LTR DATE DWN APVD REVISED PER ECO-12-009760 14MAY2012 JJ AC REVISED PER ECO-14-000741 16JAN2014 PP

Contextual Info: KM736V795 128Kx36 Synchronous SRAM D o c u m e n t T itle 128Kx36-Bit Synchronous Pipelined Burst SRAM R e y is io n - H is lo r y Rev. No. 0 .0 0.1 History Draft Date Initial d ra ft F e bru ary. 02. 1998 C h a n g e D C c h a ra c te ris tic s V d d c o n d itio n fro m V d d = 3 .3 V + 1 0 % /- 5 % C h a n g e

M57776

Abstract: synchronous counter and clock generator by 555 ti k4 cdu
Contextual Info: jÜ N E C "ELECTRONICS INC b 45752S 0030iag H • MOS INTEGRATED CIRCUIT ¿ ¿ P D 9 3 2 5 C C L O C K G EN ER A TO R LSI CKG FOR IM PRO VED D EFIN ITIO N T V D E S C R IP T IO N The p P D 9 3 2 5 C is the clock generator (C K G ) L S I for the improved definition T V (ID T V ). T his L S I generates the clock