C 144 ESS Search Results

Contextual Info: ADVANCE 2 MEG X 64 S D R A M SO DIM M IC Z R O fM SMALL-OUTLINE SDRAM MODULE MT8LSDT264H FEATURES OPTIONS 144-Pin Small-Outline DIMM DF-6 umilimi MARKING • Package 144-pin SODIM M (gold) G • F requen cy/C A S Latency 66 M H z /C L = 2 (10ns, 100 M Hz SDRAM s) -66CL2

u574

Abstract: IC BL 176A IF cable 8D-FB COAXIAL CABLE 5D-2V b11g 105j 250v 2DLF MQ 303A B177D B176D
Contextual Info: •W CONTEf S in c e 1978 s 1 Reg. No. Q8718 ISO -9001: 2000 - BT" É ? Jk 100MHz 300MHz * 400MHz P3 ~ P4 800MHz N ANTENNA 1 1» P6 144/430MHZ P7 ~ P10 TWO BAND P11 ~ P12 MIC ECHO AMP P13 I EARPHONE MIC P13 ANTENNA B A S E TRANSCEIVER A C C ESSO R IES P15 ~ P16

Contextual Info: fax id: 5205 C Y 7 C 145 ”• ■ ■ ¿¡¡P: C Y 7 C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True Dual-Ported memory cells which allow sim ultaneous reads of the same m em ory location 8K x 8 organization CY7C144 8K x 9 organization (CY7C145)

Contextual Info: RDRAM for Short Channel 128/144-Mbit 256Kx16/18x32s-C Preliminary Information Overview The RDRAM device is a general purpose highperformance memory device suitable for use in a broad range of applications including communications, graphics, video, and any other application where high

dsp32010

Abstract: DSP32Q AL25-60 SN74ALS74
Contextual Info: s3 GENERAL INSTRUMENT Ì 001702 DSP32010/300 r f ì _ a . Æ t e ~ n o - ^ e PIN CONFIGURATION 40 LEAD DUAL IN LINE DIGITAL SIGNAL PROCESSOR FEATURES: TOP VIEW -h r- - 195.12ns in s tru c tio n cy c le v / .J - 144 word on-chip data RAM - ROMless versio n - DSP32010

nand flash ecc bits

Abstract: arbiter decoder -1996 M-Bits FIFO Field Memory FLASH DRIVE CONTROLLER intel 80c188
Contextual Info: ABRIDGED VERSION / il SSI 36C3950 s é c o n M PCMCIA-ATA/IDE Flash Drive Controller Ìa n s A TDK Group/Company Advance Information February 1996 FEATURES DESCRIPTION The SSI 36C3950 ATA FLASH Controller is a CMOS monolithic integrated circuit housed in a 144-lead

TMS44C256DJ

Abstract: TMS44C260DJ TMS44C260 TMS44C256
Contextual Info: TM256KBK36C 262144 BY 36-BIT DYNAMIC RAM MODULE TM512LBK36C 524 288 BY 36-BIT DYNAMIC RAM MODULE SMMS237 — JANUARY 1991 TM256KBK36C . 262 144 x 36-Bit Organization Performance Ranges: TM512LBK36C . 524 288 x 36-Bit Organization T IM E TIM E W RITE *R A C

Contextual Info: M OSEL V I T E L I C V43644YOV 3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM ■ Nonbuffered

DA44

Abstract: da53 DB26 DB-28
Contextual Info: Preliminary Information Direct RDRAM for Short Channel 128/144-Mbit 256Kx16/18x32s-C RAMBUS Overview The Rambus Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including communications, graphics, video, and any other application where

C23 Series

Abstract: c822c LEVEL TRANSMITTER FLOAT TYPE Gems Sensors
Contextual Info: Small Size – Alloys Ordering is Easy! See Page C-12. Easy online ordering too! LEVEL SENSORS – CONTINUOUS XM/XT-800 Series – Compact Analog Sensors Lengths to 12 ft!  Stainless or Brass Construction  1/4˝ Resolution  Lengths to 144 inches  OEM Configurations Available

Contextual Info: M OSEL V I T E L I C V43648Z0V 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM

CI44

Abstract: C144 marconi push-pull audio amplifier marconi company
Contextual Info: C 144/JULY 1954 A Twin Tetrode Type C144 a non i H F PO W E R A M P L IF IE R INDEX BOSS 6 . PINS O OS8" ON I OOÖ' P C. DIA. AT PIN General. A push-pull beam tetrode fitted w ith an indirectly heated cathode, suitable for use as an H F pow er am plifier at frequencies up to 200 M c/s.

c1449

Abstract: C144 ESS CY7C144 CY7C145 IDT7005 1BHC
Contextual Info: fax id: 5205 ,.V.V.V.V.^ !!rnr' C Y 7C 145 C Y 7C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow sim u ltan eo u s read s o f th e s a m e m e m o ry location 8K x 8 o rg an iza tio n C Y 7 C 14 4

Z952

Abstract: c144 1S84 C144 e 5v CY7C144 CY7C145 IDT7005
Contextual Info: fax id: 5205 ,.V.Ï.Ï.V.^ y nr' C Y 7C 145 Æ C Y 7C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True D u al-P o rted m em o ry ce lls w h ich allow sim u ltan eo u s read s o f th e s a m e m e m o ry location 8K x 8 o rg an iza tio n C Y 7 C 14 4

B-14410

Abstract: B1449 B1447
Contextual Info: m w CYPRESS CY7B144 CY7B145 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-m icron B iC M O S for high perform ance T h e C Y 7B 144 a n d C Y 7B 145 a re h ig h ­ sp e e d B iC M O S 8K x 8 an d 8K x 9 d u a l­

D4242-1

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT M E C J L /P D 4 2 S 4 2 1 0 ,4 2 4 2 1 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210,424210 are 262 144 words by 16 bits dynamic CMOS RAMs with optional

TF286

Abstract: 13B2
Contextual Info: 13B2 2 METER BROADBAND BOOMER SSB/CW/FM YAGI 144-148 MHz c u s h c r a ft C O R P O R A T I O N 951410 7/92} W A R M IN G T H IS A N T E N N A IS A N E L E C T R IC A L C O N D U C T O R . C O N T A C T W ITH P O W E R L IN E S C A N R E S U L T IN DEATH. O R S E R IO U S IN JU R Y

Hitachi DSA00280

Contextual Info: HM62V16256C Series 4 M SRAM 256-kword x 16-bit ADE-203-1099G (Z) Rev. 4.0 Jul. 31, 2002 Description The Hitac hi HM62V16256C S erie s is 4-Mbit static R AM orga nized 262, 144-word × 16-bit. HM62V16256C S erie s has re alize d higher density, higher per forma nce and low powe r consumption by employing C MOS

HM62A168

Contextual Info: HM62A168, HM62A188 Series Direct Mapped 8,192-Word x 16 18 -Bit/ 2-Way 4,096-Word x 16(18)-Bit Static C ach e Mem ory • DESCRIPTION The H itachi H M 62A168/188 is a high speed 128(144)-k Cache memory organized as 2-way set a sso cia tiv e 4k x 16(18) or dire ct m apped 8k x

M5M44256BP

Abstract: SOJ-20 M5M44256B-8
Contextual Info: MITSUBISHI L SIs M 5 M 4 4 2 5 6 B P ,J ,L ,V P ,R V - 7 ,- 8 ,- 1 0 FAST PAGE MODE 1 0 4 8 5 7 6 -B IT 2 6 2 144-WORD BY 4-BIT DYNAMIC RAM D ES C R IP T IO N This is a family of 262144-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and

251-N

Contextual Info: MITSUBISHI LSIs M5M44256BP,J,L,VP,RV-7L,-8L,-10L FAST PAGE MODE 1 0 4 8 5 7 6 - B IT 2 6 2 144-W ORD BY 4-BIT DYNA M IC RAM D ESCRIPTIO N This is a fa m ily o f 26 2 1 4 4 -w o rd by 4 -b it dynam ic RAM s, PIN C O N F IG U R A T IO N (TOP V IE W ) fabricated w ith the high performance C M OS process, and

Contextual Info: MITSUBISHI LSIs M5M44258BP, J,L-7, -8,-10 STATIC COLUMN MODE 1 0 4 8 5 7 6 - B IT 2 6 2 144-W ORD BY 4-BIT DYNAM IC RAM DESCRIPTION This is a fa m ily o f 2 6 2 1 4 4 -w o r d b y 4 - b it d y n a m ic R A M s, PIN C O N F IG U R A T IO N (TOP V IE W ) fa b ric a te d w ith th e high p e rfo rm a n c e C M O S process, and

Contextual Info: MITSUBISHI LSIs M5M44268BP, J, L-7, -8, -10 STATIC COLUMN MODE 1 0 4 8 5 7 6 - B IT 2 6 2 144-W ORD BY 4-BIT DYNA M IC RAM DESCRIPTION Th is is a fa m ily o f 2 6 2 1 4 4 -w o r d by 4 -b it d y n a m ic R A M s , PIN CONFIGURATION (TOP VIEW) fa b ric a te d w ith th e high p e rfo rm a n c e C M O S process, and

Contextual Info: MITSUBISHI LSIs M5M44268BP, J, L-7, -8, -10 STATIC COLUMN MODE 1 0 4 8 5 7 6 - B IT 2 6 2 144-W ORD BY 4-BIT DYNAM IC RAM DESCRIPTION This is a fa m ily o f 2 6 2 1 4 4 -w o r d by 4 -b it d y n a m ic R A M s , PIN CO NFIGURATION (TOP VIEW) fa b ric a te d w ith th e high p e rfo rm a n c e C M O S process, an d