C 10V Search Results

LH002

Abstract: 0021C K08A 876-3100
Contextual Info: - 207 • N.S.C. ft m *E f ó -k & T a~-= 2 5 °C J6 E (1.0A, t i l — OP £ LH002 I, C + 18 Vcc & W. V % aw V c c (V ) I £ £ f+ D C t-7-w i.-T , V(.c= ± 15V fti. = lkQ. 7c=25’ C. l'o= ± 10V Ic c Ver = ± 15V, V7»=0V. 0021 Tw,c 0021C V c c - + 1 5 V , /i;. = 100Q ,0021

F4520BD

Abstract: 4518b
Contextual Info: SG S-TH O M SO N RülDOæilLICTiOiDeS HCC/HCF4518B HCC/HCF4520B DUAL UP-COUNTERS H C C /H C F 4518B D UAL BCD U P -C O U N TE R H C C /H C F 4520B D UAL B IN A R Y UPC O U N TER • MEDIUM-SPEED OPERATION - 6MHz TYP. CLOCK FREQUENCY AT 10V . POSITIVE - OR NEGATIVE - EDGE TRIGGER­

mv2109 varactor

Abstract: MV2107 MV2104 MV2112 MV2113 MV2201 MV2110 Knox Semiconductor mv2110 MV2102 MV2105
Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV2215 TYPE NUMBER CAPACITANCE @ - 4 Vdc 1 MHz pF MIN QUALITY FACTOR Q @ - 4 Vdc f = 50 MHz CAPACITANCE RATIO C-2V / C*30V MIN CAPACITANCE RATIO C -1V /C -10V

Contextual Info: r z 7 SGS-IUOMSON ^ 7 # RfflfllEMllLllCTMDeS H C C /H C F 4 0 7 8 B 8-INPUT NOR/OR GATE . MEDIUM-SPEED OPERATION tpHL, tp LH = 75ns TYP. AT V dd = 10V • QUIESCENT CURRENT SPECIFIED TO 20V c r \ p l i r*n n c \ / ir * c ■ 5V, 10V, AND 15V PARAMETRIC RATINGS

ST5093

Contextual Info: DATE ELECTRO-OPTICAL CHARACTERISTICS TA -2 5 'C PARAMETER SYMBOL TEST CONDITION COLLECTOR DARK CURRENT Iceo Vceo= 10V E e = 0 .5 m w /c m 2 COLLECTOR LIGHT CURRENT Ic V c e - 5V E c = 0 .5 m w /c rn z 30 Vce sat lc = 0 .2 mA E e = 0 .5 m w /c m z 0.4 Tr

Contextual Info: C O S /M O S IM T tr p D A T P n 4 o C RCU TS y m i n m i t o î 0 4 & H C C /H C F 4 0 1 0 4 B p / o M C C /H C F « M B 4 -B IT B ID IR E C T IO N A L U N IV E R S A L S H IF T R EG ISTER • • • • • • • • • • • M EDIU M -SPEED O P E R A T IO N : f C L= 9 MHz TYP. @ V DD= 10V

LXP-LX9126-WASHER

Contextual Info: UNCONTROLLED DOCUMENT PA R T SSI —LX R 9 126SID1 10V N UM BER E .C .N . D ATE N UM BER AND R E V IS IO N r e v CO M M ENTS C . REV. 1 1 .1 5 .1 1 E .C .N . #11769. 1 2 .0 5 .1 1 E . C .N . #11775. B 0 1 .0 4 .1 2 E .C .N . #11793. C H A ELECTRO-OPTICAL CHARACTERISTICS Ta=25'C

40C1

Contextual Info: DRAWING NUMBER REV OED— PT5063L40 E L E C T R O -O P T IC A L C HAR AC TER ISTICS TA = 2 5 " C PARAMETER SYMBOL TEST CONDITIO N COLLE CTO R D ARK CURRENT Ic e o V ceo=10V E e = D .5 m w /c m z COLLE CTO R LIGHT C U R R EN T Ic V c e = 5V E e = 0 .5 m w /c m z

2N4424

Abstract: 2N4425 500ma 40v pnp 2N4256 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 P A C K A G E Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N 4256 2N4424 2N 4425

4516B IC

Abstract: ic CMOS 4516B
Contextual Info: SGS-THOMSON H C C / H C F 4 5 1 R K S « L i M H C C / H C F 4 5 1 6 B @ ! D g S O B PRESETTABLE UP/DOWN CUNTERS • MEDIUM SPEED OPERATION fC|_= 8MHz TYP. AT 10V ■ SYNCHRONOUS INTERNAL CARRY PROPA­ GATION ■ RESET AND PRESET CAPABILITY ■ QUIESCENTT CURRENT SPECIFIED TO 20V

DD 127 D transistor

Abstract: 40107B transistor DD 127 D TIC 136 Transistor P013M triac b 978
Contextual Info: SGS-IHOMSON D œ m iC T œ r a ie i H C C / H C F 4 0 1 0 7 B DUAL 2-INPUT NAND BUFFER/DRIVER . 32 TIM ES STANDARD B-SERIES OUTPUT CURRENT DRIVE SINKING CAPABILITY - 136mA TYP. @ V dd = 10V, V ds = 1V • QUIESCENT CURRENT SPECIFIED AT 20V C A D U p p H C \/IP C

UPC30C

Abstract: mpc1021c UPC-30C PC1215
Contextual Info: AM Tuners S u p p ly T y p e No. Use C irc u it D e s c rip tio n V oltag e V Package E le ctrica l C haracteristics O u tlin e (Ta = 2 5 ° C, V c c = 10V) Ic e 1 5 -2 0 -2 5 (m A ) Avi 1 9 -2 3 -2 6 (dB) RF AM P f = 1 MHz Car radio O s c illa to r, IF

Contextual Info: HD14008B E L E C T R IC A L C H A R A C T E R IS T IC S * T o c a lcu la te total supply cu rren t a l frequency o l h e r th a n 1 k H z . G*W > ^5.0V I t = \.7fx A/kHz @Voo = 10V fr= Î3 .4 ^ A /kH O / + /oo (rf 1//JD— 15 V /r=(5.Q//A/kHz /—I üb • DC C H A R A C T E R IS T IC T E S T C IR C U IT

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V h FE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN

2N5306 equivalent

Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

Contextual Info: /"TLinfiAR _ TECHNOLOGY LTC1515Series S te p -U p /S tep -D ow n S w itch e d C a p a c ito r D C /D C C onverters w ith Reset F€flTUR€S DCSCRIPTIOn • Adjustable/Selectable 3V, 3.3V or 5V Output Voltages ■ 2V to 10V Input Voltage Range

U 855 D

Abstract: 4095B 4096B
Contextual Info: r z m 7 7 # S G S -T H O M S O N H C C / H C F 4 0 9 5 B M H C C / H C F 4 0 9 6 B œ m iC T M K S GATE J-K MASTER-SLAVE FLIP-FLOPS . 16 MHz TOGGLE RATE typ. AT V dd - Vss = 10V . GATED INPUTS . QUIESCENT CURRENT SPECIFIED TO 20v c o n u p p inputs is transferred to the Q and Q outputs on the

"to-98" package

Abstract: 2N5355 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V hFE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N5232

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232A 2N5249A 2N5305 2N5306 2N5309
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 P A C K A G E Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN

LT-1515

Contextual Info: r r w m _ _ _ ^ C 1 5 1 £ S e r i e s TECHN O LO GY Step -U p /Step -D o w n S w itch e d C a p a c ito r D C /D C C o n ve rte rs w ith R eset F€flTUR€S DCSCRIPTIOn • Adjustable/Selectable 3V, 3.3V or 5V Output Voltages ■ 2V to 10V Input Voltage Range

m3700

Abstract: 9112 U6A911259X fairchild micrologic fairchild 9112 ScansUX978
Contextual Info: HIGH LEVEL LOGI C DIOD E T R A N S I S T O R M I C R O L O G I C INTEGRATED C I R C U I T S TheH L L D T /iL 9112 is aC C S L to High L evel Hex In te rfa c e E lem en t. The 9112 c o n s is ts of six g a te s su itab le fo r converting fro m CCSL le v e ls up to high logic le v e ls 10V to 1 8 V . The 9112 is id e a l

SL 100 NPN Transistor base emitter collector

Abstract: D29E6 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N4256

Abstract: 2N4425 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 2N5172
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

Contextual Info: REV REVISIONS REV □RAW ING N UM BE R O E D - P T -1 MLB ELECTRO— OPTICAL CHARACTERISTICS TA - 2 5 'C PARAMETER SYMBOL TEST CONDITION COLLECTOR DARK CURRENT leso V ceo= 10V E e = 0 .5 m w /c m 2 COLLECTOR UGHT CURRENT le V c c = 5V E e = 0 .5 m w /c m z