BZX MARKING DIODE Search Results

BZX 460

Abstract: marking "2-2 Z" SOT-23 BZX84C DA5 marking bzx 2v7 marking rzr BZX 46.0
Contextual Info: / T 7 SGS-THOMSON SURFACE MOUNT DEVICES H 0»[i&,[l 3TO *S GENERAL PURPOSE & INDUSTRIAL SCHOTTKY DIODES Type Config. Maximum ratings Vrm Characteristics at 25°C Ir @ V r 'F max (V (mA) Vp min W (V) @ (V) C VR •f Dynamic parameters Marking (mA) <PF)

BZX 5V6

Abstract: BZX 9V1 BZX 4V7 BZX 6v8 bzx 8v2 8v2 BZX 15 BZX BZX -2V5 bZX equivalent BZX 2.7 v
Contextual Info: A C T IV E COMPONENTS FO R H YB R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S CB-166 SOT-23 Voltage regulator diodes Marking Type Marquage Brochage Type . Pin conf. Diodes de régulation de tension VZT (V) rZT /t ' z r / VR (mI rai yy (V)

DIODE A6

Abstract: Y6 ZENER DIODE BZXB4C10 sprague catalog BZX marking diode ZENER diode Y8 Y4 ZENER DIODE diode ZENER A8 diode ZENER Y6 marking A6 ZENER DIODE
Contextual Info: SPRflGUE DIODES « DIODES » DIODES « DIODES ♦ DIODES THE MARK OF RELIABILITY SERIES BAV and BAW MICROMINIATURE DIODES • • Series BAS, BAV, and BAW consists of standard European single and dual diode types. Devices are molded in a T 0 -2 6 3 A A high-profile or T O -2 3 6 AB (low-profile) package. These

c4v3 zener

Abstract: c4v3 zener diode
Contextual Info: Silicon zener diodes. 1.3 Watts. The plastic material carries U/L recognition 94V-0. BZX85/SZ25 Sene«. 1 3 Watte. Case : DO-4 J/SMA Outline: 2/7 Nominal Zener Voltage TYPE Axial Lead BZX85 C2V7 BZX85 C3V0 BZX85 C3V3 BZX85 C3V6 BZX85 C3V9 BZX85 C4V3 BZX85 C4V7

Contextual Info: BZX79C Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature

Contextual Info: BZX55B Series Zener diode Features Vz-tolerance ±2% Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature

Contextual Info: BZX79B Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature

DIODE BZX85b

Abstract: BZX85-B160 DIODE BZX 24 BZX85B BZX85B2V7 BZX85B3V0 BZX marking diode BZX85
Contextual Info: TH97/2478 BZX85B Series TH09/2479 IATF 0060636 SGS TH07/1033 SILICON ZENER DIODES DO - 41 VZ : 2.4 - 220 Volts PD : 1.3 Watts FEATURES : * Complete Voltage Range 2.4 to 220 Volts * High peak reverse power dissipation * High reliability * Low leakage current

BZX85

Abstract: zener diode marking c24 DIODE BZX 62 BZX85 C27 diode zener BZX85 C 5.1 C82 diode BZX85C C100 C110 C120
Contextual Info: BZX85C Series SILICON ZENER DIODES DO - 41 VZ : 2.4 - 200 Volts PD : 1.3 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

Contextual Info: BZX55B Series Zener diode Features Vz-tolerance ±2% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol

Contextual Info: BZX79B Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol

Contextual Info: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature

BZX85

Abstract: diode zener bzx c9v1 BZX85 C27 DIODE BZX 24 BZX85-C15 C82 diode diode zener BZX85 C 5.1 BZX85C c4v3 zener diode C110
Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BZX85C Series SILICON ZENER DIODES

zener BZX 96

Contextual Info: BZX79C Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol

BZX 85C Zener diode

Abstract: zener bzx 33 85c Zener Diode BZx 84 DIODE BZX 85c diode zener BZX 55C DIODE 85c BZx
Contextual Info: BZX85C3V3RL Series 1 Watt DO−41 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 1 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial−lead

BZX 85C Zener diode

Abstract: zener bzx 33 85c DIODE 85c BZx 16 DIODE BZX 85c DIODE 85c BZx DIODE BZX 24 85c BZX 24 85C Zener Diode BZx 84 DIODE BZX 85c 15 BZX85Cxxx
Contextual Info: TAK CHEONG 1.3 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Rating Symbol Value Unit Maximum Steady State Power Dissipation @ TL ≤50°C, Lead Length = 3/8” PD 1.3 W 8.67 mW/°C -65 to +200 °C Derate Above 50°C Operating and Storage

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

inductive wheel speed sensor interface

Abstract: label infineon TLE4905L hall switch ignition KP110 crankshaft sensor position AEB01585 AEB02059 airbag AED01626
Contextual Info: Application Notes Electrical Tests and Application Circuit • The sockets or integrated circuits must not be conducting any voltage when individual devices or assembled circuit boards are inserted or withdrawn, unless works’ specifications state otherwise. Ensure that the test devices and power supplies do not

OPA659

Contextual Info: OPA659 OP A6 59 www.ti.com . SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input

OPA657 transimpedance amplifier

Abstract: PAY MARKING SMD SOT23-5 bzx 1.4v OPA356 OPA627 OPA653 OPA656 OPA657 OPA659 THS4631
Contextual Info: OPA659 OP A6 59 www.ti.com. SBOS342 – DECEMBER 2008 Wideband, Unity-Gain Stable, JFET-Input

BZX 12v

Abstract: PAY MARKING SMD SOT23-5 marking J3 SOT23-5 734MHz
Contextual Info: OPA659 OP A6 59 www.ti.com . SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input

SMD DIODE A6 t SOT-23

Contextual Info: OPA659 OP A6 59 www.ti.com . SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input

Contextual Info: OPA659 OP A6 59 www.ti.com. SBOS342 – DECEMBER 2008 Wideband, Unity-Gain Stable, JFET-Input

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada