BZX 86 C Search Results

PL33Z

Abstract: PL36Z bzx 2v7 PL20Z PL180 pl6v2 diodes de regulation de tension PL30Z PL6V2Z z 5v1
Contextual Info: . DIODES DE RÉGULATION DE TENSION nxy nxy nxy nxy nxy nxy n ü nxy nxy nxy nxy nxy nxy nxy •*xy 1C? txy *x y nxy nxy nxy nxy nxy nxy •«re? *xy %xy /» O nxy nxy nxy nxy BZX B ZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX BZX

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

B81121 X2 mkt

Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
Contextual Info: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r

circuit diagram of automatic mains failure

Abstract: U2400B 9382 vt6 transistor 6 pin pulse transformer CIRCUIT DIAGRAM OF BD135 SO16L BD135 BYT77 BYX86
Contextual Info: U2400B Charging of Batteries with Automatic Pre-Discharge Description The monolithic integrated circuit, U2400B, is a bipolar circuit, designed for automatic recharging of NiCd/ NiMH batteries. It has controlled and defined charging * characteristics for various charging sequences with

LM358 oscillator

Abstract: circuit diagram of automatic mains failure TP 9382 U2400B I9100 BD135 BD442 BYT77 BD442 A1 LM358
Contextual Info: U2400B TELEFUNKEN Semiconductors Charging of Batteries with Automatic Pre-Discharge Description The monolithic integrated circuit, U2400B, is a bipolar circuit, designed for automatic recharging of NiCd/ NiMH batteries. It has controlled and defined charging

circuit diagram of automatic mains failure

Abstract: CIRCUIT DIAGRAM OF BD135 U2400B TLHR u2400 BD135 BYT77 BYX86 TLHG5400 TLHR5400
Contextual Info: U2400B Charging of Batteries with Automatic Pre-Discharge Description The monolithic integrated circuit, U2400B, is a bipolar circuit, designed for automatic recharging of NiCd/ NiMH batteries. It has controlled and defined charging * characteristics for various charging sequences with

Contextual Info: CY7C1412BV18 CY7C1414BV18 36-Mbit QDR II SRAM 2-Word Burst Architecture Features Configurations • Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1412BV18 – 2M x 18 CY7C1414BV18 – 1M x 36 ■ 250 MHz clock for high bandwidth

3M Touch Systems

Contextual Info: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • 18-Mbit density (2 M x 8, 2 M × 9, 1 M × 18, 512 K × 36)

Contextual Info: CY7C1313CV18 CY7C1315CV18 18-Mbit QDR II SRAM 4-Word Burst Architecture 18-Mbit QDR® II SRAM 4-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions CY7C1313CV18 – 1M x 18 •

Contextual Info: CY7C1312CV18 CY7C1314CV18 18-Mbit QDR II SRAM 2-Word Burst Architecture 18-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations • Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1312CV18 – 1M x 18

bzx 850

Abstract: bzx 850 30
Contextual Info: CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM Two Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth ■ 2-word burst on all accesses

3M Touch Systems

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-53197 Spec Title: CY7C11611KV18/CY7C11761KV18/CY7C11631KV18/ CY7C11651KV18, 18-Mbit QDR II+ SRAM 4-Word Burst Architecture 2.5 Cycle Read Latency Sunset Owner: Jayasree Nayar (NJY) Replaced by: None CY7C11611KV18, CY7C11761KV18

Contextual Info: CY7C1361C CY7C1363C PRELIMINARY 9-Mbit 256K x 36/512K x 18 Flow-Through SRAM Functional Description[1] Features • Supports 133-MHz bus operations The CY7C1361C/CY7C1363C is a 3.3V, 256K x 36 and 512K x 18 Synchronous Flowthrough SRAMs, respectively designed

BY236

Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Contextual Info: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )

CY7C1470BV25

Contextual Info: CY7C1470BV25 CY7C1472BV25 72-Mbit 2 M x 36/4 M × 18 Pipelined SRAM with NoBL Architecture 72-Mbit (2 M × 36/4 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

Contextual Info: CY7C1366C CY7C1367C PRELIMINARY 9-Mbit 256K x 36/512K x 18 Pipelined DCD Sync SRAM Functional Description[1] Features • Supports bus operation up to 225 MHz • Available speed grades are 225, 200 and 166 MHz • Registered inputs and outputs for pipelined operation

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

mc3843

Abstract: pikatron transformer TFK U2400B TFK U 217 B TFK 1n4148 pikatron car laptop charger schematic SI9120 1N4007W charge battery lm339
Contextual Info: The U240xB Battery Charge IC Family Design Guide 04.96 Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Standard and Accelerated Battery Charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: Features • Utilizes the ARM7TDMI ARM Thumb® Processor Core - High-performance 32-bit RISC Architecture - High-density 16-bit Instruction Set - Leader in MIPS/Watt - Embedded ICE In-Circuit Emulation • 2K Bytes Internal RAM • Fully-program mable External Bus Interface (EBI)

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten